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Publications in Math-Net.Ru |
Citations |
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2012 |
1. |
P. G. Eliseev, “N. G. Basov and early works on semiconductor lasers at P. N. Lebedev Physics Institute”, Kvantovaya Elektronika, 42:12 (2012), 1073–1080 [Quantum Electron., 42:12 (2012), 1073–1080 ] |
1
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2009 |
2. |
P. G. Eliseev, A. Ukhanov, A. Shtints, K. J. Malloy, “Electrical properties of InAs/InGaAs quantum-dot laser heterostructures: A threshold effect”, Kvantovaya Elektronika, 39:6 (2009), 501–504 [Quantum Electron., 39:6 (2009), 501–504 ] |
2
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2006 |
3. |
P. G. Eliseev, “On the calculation of the gyro-factor in a semiconductor ring laser”, Kvantovaya Elektronika, 36:8 (2006), 738–740 [Quantum Electron., 36:8 (2006), 738–740 ] |
8
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2005 |
4. |
P. G. Eliseev, “Spectral perturbations in a semiconductor laser: II. Nonlinear interaction of modes”, Kvantovaya Elektronika, 35:9 (2005), 791–794 [Quantum Electron., 35:9 (2005), 791–794 ] |
8
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5. |
P. G. Eliseev, Ch. Liu, H. Cao, M. A. Osinski, “Spectral perturbations in a semiconductor laser: I. Anomalous splitting in the mode-beating spectrum”, Kvantovaya Elektronika, 35:9 (2005), 787–790 [Quantum Electron., 35:9 (2005), 787–790 ] |
1
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2004 |
6. |
P. G. Eliseev, J. Lee, M. A. Osinski, “Electro-optical properties of UV-emitting InGaN heterostructures considering injection-induced conductivity”, Kvantovaya Elektronika, 34:12 (2004), 1127–1132 [Quantum Electron., 34:12 (2004), 1127–1132 ] |
2
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2002 |
7. |
P. G. Eliseev, “Semiconductor lasers: from homojunctions to quantum dots”, Kvantovaya Elektronika, 32:12 (2002), 1085–1098 [Quantum Electron., 32:12 (2002), 1085–1098 ] |
5
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2001 |
8. |
P. G. Eliseev, S. V. Gastev, A. Koizumi, Y. Fujiwara, Y. Takeda, “Stimulated emission from GaAs:Er, O at 1538 nm”, Kvantovaya Elektronika, 31:11 (2001), 962–964 [Quantum Electron., 31:11 (2001), 962–964 ] |
3
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2000 |
9. |
P. G. Eliseev, H. Li, G. T. Liu, A. Shtints, T. C. Newell, L. E. Lester, K. J. Malloy, “Optical gain in InAs/InGaAs quantum-dot structures: Experiments and theoretical model”, Kvantovaya Elektronika, 30:8 (2000), 664–668 [Quantum Electron., 30:8 (2000), 664–668 ] |
10
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10. |
P. G. Eliseev, “Analysis of absorption and amplification in a unipolar semiconductor structure with quantum dots”, Kvantovaya Elektronika, 30:2 (2000), 152–157 [Quantum Electron., 30:2 (2000), 152–157 ] |
2
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1998 |
11. |
I. V. Akimova, P. G. Eliseev, M. A. Osinski, “High-temperature properties of InGaN light-emitting diodes”, Kvantovaya Elektronika, 25:11 (1998), 1013–1016 [Quantum Electron., 28:11 (1998), 987–990 ] |
3
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12. |
P. G. Eliseev, I. V. Akimova, “Emission from quantum-well InGaAs structures”, Kvantovaya Elektronika, 25:3 (1998), 206–210 [Quantum Electron., 28:3 (1998), 198–202 ] |
1
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1997 |
13. |
P. G. Eliseev, Yu. M. Popov, “Semiconductor lasers”, Kvantovaya Elektronika, 24:12 (1997), 1067–1079 [Quantum Electron., 27:12 (1997), 1035–1047 ] |
5
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1996 |
14. |
I. V. Akimova, P. G. Eliseev, M. A. Osinski, P. Perlin, “Spontaneous emission from a quantum-well GaN/InGaN/AlGaN heterostructure at high pump currents”, Kvantovaya Elektronika, 23:12 (1996), 1069–1071 [Quantum Electron., 26:12 (1996), 1039–1041 ] |
7
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15. |
P. G. Eliseev, A. E. Drakin, “Self-distribution of the current in laser diodes and its possible use for reducing the optical nonlinearity of the active medium”, Kvantovaya Elektronika, 23:4 (1996), 307–310 [Quantum Electron., 26:4 (1996), 299–302 ] |
5
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1995 |
16. |
P. G. Eliseev, G. T. Mikayelyan, “Optical strength of the mirror faces of a pulsed InGaAs/GaAs/GaAIAs semiconductor laser”, Kvantovaya Elektronika, 22:9 (1995), 895–896 [Quantum Electron., 25:9 (1995), 863–864 ] |
2
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17. |
P. G. Eliseev, G. Beister, A. E. Drakin, I. V. Akimova, G. Erbert, J. Maege, J. Sebastian, “Power hysteresis and waveguide bistability of stripe quantum-well InGaAsGaAsGaAIAs heterolasers with a strained active layer”, Kvantovaya Elektronika, 22:4 (1995), 309–320 [Quantum Electron., 25:4 (1995), 291–301 ] |
1
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18. |
P. G. Eliseev, J. Maege, G. Erbert, G. Beister, “Threshold drop of the differential resistance of stripe quantum-well InGaAsGaAIAs lasers”, Kvantovaya Elektronika, 22:2 (1995), 108–110 [Quantum Electron., 25:2 (1995), 99–101 ] |
3
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1994 |
19. |
I. V. Akimova, P. G. Eliseev, V. P. Konyaev, V. I. Shveikin, “Spectral investigation of the radiation emitted by strained InGaAs/GaAlAs quantum-well heterostructures”, Kvantovaya Elektronika, 21:5 (1994), 405–408 [Quantum Electron., 24:5 (1994), 373–376 ] |
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1993 |
20. |
P. G. Eliseev, P. V. Karga, “Analysis of electron confinement by a periodic semiconductor structure”, Kvantovaya Elektronika, 20:9 (1993), 846–850 [Quantum Electron., 23:9 (1993), 733–736 ] |
21. |
P. G. Eliseev, R. F. Nabiev, A. I. Onishchenko, “Theoretical analysis of profiled quantum-well laser structures”, Kvantovaya Elektronika, 20:1 (1993), 31–38 [Quantum Electron., 23:1 (1993), 26–32 ] |
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1992 |
22. |
E. I. Davydova, A. E. Drakin, P. G. Eliseev, G. T. Pak, V. V. Popovichev, M. B. Uspenskiy, S. E. Khlopotin, V. A. Shishkin, “Directional pattern and other output properties of a quantum-well injection laser for the 780-nm spectral region”, Kvantovaya Elektronika, 19:10 (1992), 1024–1031 [Sov J Quantum Electron, 22:10 (1992), 954–960 ] |
4
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23. |
P. G. Eliseev, B. N. Zakhar'ev, “Problems involved in the profiling of quantum wells and barriers for optoelectronic applications”, Kvantovaya Elektronika, 19:10 (1992), 1014–1017 [Sov J Quantum Electron, 22:10 (1992), 944–947 ] |
24. |
Vu Van Luc, V. P. Duraev, P. G. Eliseev, E. T. Nedelin, M. V. Tsotsorya, “Interferometric modulation in an optical amplifier based on an InGaAsP/lnP heterostructure”, Kvantovaya Elektronika, 19:7 (1992), 674–676 [Sov J Quantum Electron, 22:7 (1992), 624–626 ] |
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1990 |
25. |
V. I. Baryshev, A. P. Bogatov, V. P. Duraev, P. G. Eliseev, S. A. Luk'yanov, M. P. Rakhval'skiĭ, “Radiative characteristics of buried mesa stripe heterolasers emitting at 1.5 μm”, Kvantovaya Elektronika, 17:9 (1990), 1147–1150 [Sov J Quantum Electron, 20:9 (1990), 1057–1059 ] |
1
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1989 |
26. |
A. P. Bogatov, N. A. Vagner, E. I. Davydova, P. G. Eliseev, O. A. Kobildzhanov, O. M. Nikitina, G. T. Pak, “Injection laser with a waveguide lens”, Kvantovaya Elektronika, 16:11 (1989), 2173–2176 [Sov J Quantum Electron, 19:11 (1989), 1397–1399 ] |
27. |
P. G. Eliseev, I. S. Tsimberova, “Nonradiative losses in InGaAsP/InP heterostructures”, Kvantovaya Elektronika, 16:10 (1989), 2074–2077 [Sov J Quantum Electron, 19:10 (1989), 1334–1336 ] |
28. |
A. P. Bogatov, P. G. Eliseev, O. A. Kobildzhanov, M. P. Rakhval'skiĭ, A. V. Khaĭdarov, “Investigation of the transverse structure of the radiation field of an injection laser using an external dispersive resonator”, Kvantovaya Elektronika, 16:9 (1989), 1765–1769 [Sov J Quantum Electron, 19:9 (1989), 1135–1137 ] |
1
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29. |
Bui Huy, Vu Van Luc, V. P. Duraev, P. G. Eliseev, M. A. Man'ko, E. T. Nedelin, Nguyên Thi Thanh Truong, Nguyên Chyong Thong Nhat, “Single-mode laser amplifier operating in the 1.3 μm range and using a buried stripe heterostructure”, Kvantovaya Elektronika, 16:8 (1989), 1606–1608 [Sov J Quantum Electron, 19:8 (1989), 1034–1036 ] |
30. |
I. V. Akimova, M. G. Vasil'ev, E. G. Golikova, A. E. Drakin, P. G. Eliseev, V. I. Romantsevich, B. N. Sverdlov, V. I. Shveĭkin, A. A. Shelyakin, “Low-threshold buried 1.3-μm injection lasers with two-channel lateral confinement and <i>n</i>-type InP substrates”, Kvantovaya Elektronika, 16:3 (1989), 457–462 [Sov J Quantum Electron, 19:3 (1989), 303–306 ] |
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1988 |
31. |
J. Frahm, P. G. Eliseev, “Laser diode modules”, Kvantovaya Elektronika, 15:11 (1988), 2245–2246 [Sov J Quantum Electron, 18:11 (1988), 1405–1406 ] |
32. |
Vu Van Luń, P. G. Eliseev, M. A. Man'ko, M. V. Tsotsorya, “Electrical response of InGaAsP/InP heterolasers”, Kvantovaya Elektronika, 15:11 (1988), 2227–2230 [Sov J Quantum Electron, 18:11 (1988), 1395–1397 ] |
33. |
A. P. Bogatov, P. G. Eliseev, S. A. Luk'yanov, G. T. Pak, T. V. Petrakova, “Line width of a single longitudinal mode emitted by an AlGaAs heterojunction laser”, Kvantovaya Elektronika, 15:11 (1988), 2223–2226 [Sov J Quantum Electron, 18:11 (1988), 1392–1395 ] |
34. |
A. L. Virro, P. G. Eliseev, P. A. Lyuk, Ya. K. Fridental, Yu. É. Khaller, “Injection lasers based on the AlGaAsSb system emitting at 1,6 μm”, Kvantovaya Elektronika, 15:11 (1988), 2208–2209 [Sov J Quantum Electron, 18:11 (1988), 1383–1384 ] |
35. |
A. É. Bochkarev, L. M. Dolginov, A. E. Drakin, P. G. Eliseev, B. N. Sverdlov, “Continuous-wave lasing at room temperature in InGaSbAs/GaAlSbAs injection heterostructures emitting in the spectral range 2.2–2.4 μm”, Kvantovaya Elektronika, 15:11 (1988), 2171–2172 [Sov J Quantum Electron, 18:11 (1988), 1362–1363 ] |
40
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36. |
È. M. Belenov, P. G. Eliseev, A. N. Oraevsky, V. I. Romanenko, A. G. Sobolev, A. V. Uskov, “Analysis of optical amplification due to tunneling of electrons in a quantum-well semiconductor heterostructure”, Kvantovaya Elektronika, 15:8 (1988), 1595–1601 [Sov J Quantum Electron, 18:8 (1988), 995–999 ] |
1
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37. |
A. P. Bogatov, V. P. Duraev, P. G. Eliseev, S. A. Luk'yanov, “Width and profile of the emission line of a cw InGaAsP/InP laser with a buried stripe heterostructure”, Kvantovaya Elektronika, 15:8 (1988), 1552–1554 [Sov J Quantum Electron, 18:8 (1988), 971–972 ] |
2
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38. |
A. P. Bogatov, P. G. Eliseev, B. I. Makhsudov, “Influence of temperature on the angular distribution of radiation emitted by InGaAsP heterolasers”, Kvantovaya Elektronika, 15:2 (1988), 253–258 [Sov J Quantum Electron, 18:2 (1988), 160–163 ] |
1
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1987 |
39. |
V. P. Duraev, P. G. Eliseev, B. I. Makhsudov, B. N. Sverdlov, V. I. Shveĭkin, “CONTINUOUS GENERATION AND HIGH-TEMPERATURE LASER TESTS UNDER
100-DEGREES-C BASED ON INGAASP/INP”, Zhurnal Tekhnicheskoi Fiziki, 57:8 (1987), 1570–1574 |
40. |
V. P. Duraev, P. G. Eliseev, B. I. Makhsudov, E. T. Nedelin, V. I. Shveĭkin, “Low-threshold InGaAsP/InP injection lasers”, Kvantovaya Elektronika, 14:11 (1987), 2201–2202 [Sov J Quantum Electron, 17:11 (1987), 1402–1403 ] |
41. |
P. G. Eliseev, G. T. Pak, V. V. Popovichev, S. M. Sapozhnikov, “Investigation of the service life of cw GaAIAs/GaAs injection lasers”, Kvantovaya Elektronika, 14:4 (1987), 892–894 [Sov J Quantum Electron, 17:4 (1987), 566–568 ] |
42. |
A. E. Bazarov, I. S. Goldobin, P. G. Eliseev, O. A. Kobilzhanov, G. T. Pak, T. V. Petrakova, T. N. Pushkina, A. T. Semenov, “Phase locking of stimulated emission from arrays of stripe GaAIAs/GaAs lasers using active directional couplers”, Kvantovaya Elektronika, 14:4 (1987), 874–876 [Sov J Quantum Electron, 17:4 (1987), 551–553 ] |
1
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43. |
I. V. Akimova, A. E. Drakin, V. P. Duraev, P. G. Eliseev, B. I. Makhsudov, B. N. Sverdlov, “Fast degradation defects on reflecting faces of InGaAsP/lnP lasers emitting in the 1.3 μ range”, Kvantovaya Elektronika, 14:1 (1987), 204–205 [Sov J Quantum Electron, 17:1 (1987), 121–122 ] |
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1986 |
44. |
A. P. Bogatov, P. G. Eliseev, O. A. Kobildzhanov, V. R. Madgazin, O. G. Okhotnikov, G. T. Pak, A. V. Khaĭdarov, “Fluctuations of the intensity of radiation from a single-frequency injection laser with an external dispersive resonator”, Kvantovaya Elektronika, 13:12 (1986), 2414–2423 [Sov J Quantum Electron, 16:12 (1986), 1596–1602 ] |
2
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45. |
A. É. Bochkarev, L. M. Dolginov, A. E. Drakin, L. V. Druzhinina, P. G. Eliseev, B. N. Sverdlov, V. A. Skripkin, “Injection InGaSbAs laser emitting at 2.4<i>μ</i> (300K)”, Kvantovaya Elektronika, 13:10 (1986), 2119–2120 [Sov J Quantum Electron, 16:10 (1986), 1397 ] |
2
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46. |
A. P. Bogatov, P. G. Eliseev, O. G. Okhotnikov, M. P. Rakhval'skiĭ, K. A. Khaĭretdinov, “Optical traveling-wave amplifier based on an injection laser diode”, Kvantovaya Elektronika, 13:9 (1986), 1859–1867 [Sov J Quantum Electron, 16:9 (1986), 1221–1226 ] |
1
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47. |
P. G. Eliseev, “Causes and distribution of failure of semiconductor lasers (review)”, Kvantovaya Elektronika, 13:9 (1986), 1749–1769 [Sov J Quantum Electron, 16:9 (1986), 1151–1164 ] |
4
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48. |
P. G. Eliseev, B. N. Sverdlov, I. Ismailov, N. Shokhudzhaev, “Influence of anlsotropic deformation on radiative characteristics of GaInAsP/InP injection lasers. II. Spectral characteristics and discussion”, Kvantovaya Elektronika, 13:8 (1986), 1610–1616 [Sov J Quantum Electron, 16:8 (1986), 1051–1055 ] |
4
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49. |
P. G. Eliseev, B. N. Sverdlov, I. Ismailov, N. Shokhudzhaev, “Influence of anisotropic deformation on the radiative characteristics of GaInAsP/InP injection lasers. I. Lasing threshold, polarization, and wattampere characteristic”, Kvantovaya Elektronika, 13:8 (1986), 1603–1609 [Sov J Quantum Electron, 16:8 (1986), 1046–1050 ] |
7
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50. |
P. G. Eliseev, B. N. Sverdlov, I. S. Tsimberova, “Light-emission and degradation characteristics of InGaAsP/lnP heterostructures”, Kvantovaya Elektronika, 13:7 (1986), 1376–1380 [Sov J Quantum Electron, 16:7 (1986), 902–905 ] |
51. |
P. G. Eliseev, Pham Van Hoi, “Study of perforation of a thin-film recording medium by sharply focused GaAlAs/GaAs laser radiation”, Kvantovaya Elektronika, 13:6 (1986), 1261–1264 [Sov J Quantum Electron, 16:6 (1986), 825–827 ] |
52. |
N. G. Basov, P. G. Eliseev, Yu. M. Popov, “Semiconductor lasers”, UFN, 148:1 (1986), 35–53 ; Phys. Usp., 29:1 (1986), 20–30 |
9
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1985 |
53. |
A. É. Bochkarev, L. M. Dolginov, A. E. Drakin, L. V. Druzhinina, P. G. Eliseev, B. N. Sverdlov, “Injection InGaSbAs lasers emitting radiation of wavelengths 1.9–2.3μ at room temperature”, Kvantovaya Elektronika, 12:6 (1985), 1309–1311 [Sov J Quantum Electron, 15:6 (1985), 869–870 ] |
26
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54. |
A. P. Bogatov, P. G. Eliseev, “Nonlinear refraction in semiconductor lasers (review)”, Kvantovaya Elektronika, 12:3 (1985), 465–493 [Sov J Quantum Electron, 15:3 (1985), 308–325 ] |
6
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55. |
A. P. Bogatov, I. S. Goldobin, P. G. Eliseev, O. G. Okhotnikov, G. T. Pak, M. P. Rakhval'skiĭ, E. G. Faĭnboĭm, K. A. Khaĭretdinov, “Continuous-wave single-frequency emission from an injection laser in the form of a terraced heterostructure with an external dispersive resonator”, Kvantovaya Elektronika, 12:1 (1985), 162–164 [Sov J Quantum Electron, 15:1 (1985), 97–99 ] |
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1984 |
56. |
V. P. Avdeeva, V. V. Bezotosnyi, M. G. Vasil'ev, L. M. Dolginov, A. E. Drakin, V. P. Duraev, P. G. Eliseev, N. V. Mal'kova, M. G. Mil'vidskii, B. N. Sverdlov, V. A. Skripkin, E. G. Shevchenko, “LOW-THRESHOLD INJECTION-LASERS BASED ON THICK GAINPAS/INP (1.2-1.6 MKM)
HETEROSTRUCTURES”, Zhurnal Tekhnicheskoi Fiziki, 54:3 (1984), 551–557 |
57. |
P. G. Eliseev, B. N. Sverdlov, N. Shokhudzhaev, “Reduction of the threshold current of InGaAsP/lnP heterolasers by unidirectional compression”, Kvantovaya Elektronika, 11:8 (1984), 1665–1667 [Sov J Quantum Electron, 14:8 (1984), 1120–1121 ] |
11
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58. |
L. M. Dolginov, A. E. Drakin, P. G. Eliseev, B. N. Sverdlov, V. A. Skripkin, E. G. Shevchenko, “Injection InGaAsP/lnP lasers with a threshold current density of 0.5 kA/cm<sup>2</sup> at 300 Ę”, Kvantovaya Elektronika, 11:4 (1984), 645–646 [Sov J Quantum Electron, 14:4 (1984), 439–441 ] |
3
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59. |
M. G. Vasil'ev, L. M. Dolginov, A. E. Drakin, A. V. Ivanov, P. G. Eliseev, V. P. Konyaev, B. N. Sverdlov, V. A. Skripkin, V. I. Shveĭkin, E. G. Shevchenko, A. A. Shelyakin, G. V. Shepekina, “Three-layer waveguide InGaAsP/lnP injection lasers”, Kvantovaya Elektronika, 11:3 (1984), 631–633 [Sov J Quantum Electron, 14:3 (1984), 431–432 ] |
1
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60. |
D. M. Annenkov, A. P. Bogatov, P. G. Eliseev, O. G. Okhotnikov, G. T. Pak, M. P. Rakhval'skiĭ, Yu. F. Fedorov, K. A. Khaĭretdinov, “Spectrally matched modulation, at frequencies up to 2 GHz, of injection laser radiation in a traveling-wave amplifier”, Kvantovaya Elektronika, 11:2 (1984), 231–232 [Sov J Quantum Electron, 14:2 (1984), 163–164 ] |
3
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61. |
P. G. Eliseev, A. E. Drakin, “Qualitative analysis of the threshold current of quantum-size semiconductor lasers”, Kvantovaya Elektronika, 11:1 (1984), 178–181 [Sov J Quantum Electron, 14:1 (1984), 119–121 ] |
9
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1983 |
62. |
P. G. Eliseev, A. A. Kochetkov, “Accelerated service life tests on injection lasers and transmitter modules”, Kvantovaya Elektronika, 10:10 (1983), 2118–2120 [Sov J Quantum Electron, 13:10 (1983), 1415–1417 ] |
2
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63. |
A. P. Bogatov, P. G. Eliseev, O. G. Okhotnikov, M. P. Rakhval'skiĭ, K. A. Khaĭretdinov, “Interaction of modes and self-stabilization of singlefrequency emission from injection lasers”, Kvantovaya Elektronika, 10:9 (1983), 1851–1865 [Sov J Quantum Electron, 13:9 (1983), 1221–1229 ] |
30
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64. |
A. P. Bogatov, P. G. Eliseev, “Stimulated scattering of light by waves representing excited-state populations”, Kvantovaya Elektronika, 10:4 (1983), 865–867 [Sov J Quantum Electron, 13:4 (1983), 540–541 ] |
1
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65. |
V. P. Duraev, P. G. Eliseev, S. S. Kurlenkov, I. A. Skopin, “Optical fiber coupling of 1.2–1.6 μ radiation emitted from buried mesastripe injection lasers”, Kvantovaya Elektronika, 10:3 (1983), 633–635 [Sov J Quantum Electron, 13:3 (1983), 382–384 ] |
|
1982 |
66. |
L. P. Bychkova, O. I. Davarashvili, P. G. Eliseev, M. I. Saginuri, R. I. Chikovani, A. P. Shotov, “Analysis of factors influencing the threshold current of Pb<sub>1–<i>x</i></sub>Sn<sub><i>x</i></sub>Se injection heterolasers”, Kvantovaya Elektronika, 9:11 (1982), 2140–2150 [Sov J Quantum Electron, 12:11 (1982), 1391–1397 ] |
67. |
L. M. Dolginov, V. P. Duraev, P. G. Eliseev, E. T. Nedelin, B. N. Sverdlov, V. I. Shveĭkin, E. G. Shevchenko, “Temperature dependences of the emission characteristics of GaInPAs/InP injection lasers”, Kvantovaya Elektronika, 9:9 (1982), 1902–1904 [Sov J Quantum Electron, 12:9 (1982), 1237–1238 ] |
68. |
Vũ Văn Luc, P. G. Eliseev, M. A. Man'ko, G. T. Mikayelyan, “Electrical diagnostics of the operating conditions in a monitoring amplifier based on a laser diode”, Kvantovaya Elektronika, 9:9 (1982), 1851–1853 [Sov J Quantum Electron, 12:9 (1982), 1194–1196 ] |
3
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69. |
Vũ Văn Luc, P. G. Eliseev, M. A. Man'ko, G. T. Mikayelyan, O. G. Okhotnikov, S. N. Sokolov, “Optoelectronic readout with an injection laser”, Kvantovaya Elektronika, 9:9 (1982), 1825–1830 [Sov J Quantum Electron, 12:9 (1982), 1175–1178 ] |
1
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70. |
L. M. Dolginov, A. E. Drakin, V. P. Duraev, P. G. Eliseev, B. N. Sverdlov, V. A. Skripkin, E. G. Shevchenko, “Continuous-wave injection lasers emitting in the 1.5–1.6 μ range”, Kvantovaya Elektronika, 9:9 (1982), 1749 [Sov J Quantum Electron, 12:9 (1982), 1127 ] |
71. |
A. P. Bogatov, M. G. Vasil'ev, P. G. Eliseev, O. G. Okhotnikov, G. T. Pak, M. P. Rakhval'skiĭ, K. A. Khaĭretdinov, N. P. Chernousov, V. I. Shveĭkin, “Tunable cw emission in the 1.3/J range from a GaInPAs/InP heterolaser with an external dispersive resonator”, Kvantovaya Elektronika, 9:7 (1982), 1504–1506 [Sov J Quantum Electron, 12:7 (1982), 963–965 ] |
|
1981 |
72. |
V. V. Bezotosnyi, L. M. Dolginov, P. G. Eliseev, B. N. Sverdlov, E. G. Shevchenko, G. V. Shepekina, “Mode composition of radiation from mesastripe GalnPAs–lnP heterojunction lasers buried in InP or GalnPAs”, Kvantovaya Elektronika, 8:9 (1981), 1994–1996 [Sov J Quantum Electron, 11:9 (1981), 1208–1209 ] |
2
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73. |
V. V. Bezotosnyi, V. P. Duraev, P. G. Eliseev, E. T. Nedelin, B. N. Sverdlov, G. V. Shepekina, I. N. Shishkin, “Service life of GalnPAs/lnP heterostructures”, Kvantovaya Elektronika, 8:9 (1981), 1985–1987 [Sov J Quantum Electron, 11:9 (1981), 1201–1202 ] |
1
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74. |
H.-J. Bachert, A. P. Bogatov, Yu. V. Gurov, P. G. Eliseev, O. G. Okhotnikov, G. T. Pak, M. P. Rakhval'skiĭ, K. A. Khaĭretdinov, “Radiofrequency spectra of mode beats and fluctuations of the intensity of radiation emitted by an injection laser with an external resonator”, Kvantovaya Elektronika, 8:9 (1981), 1957–1961 [Sov J Quantum Electron, 11:9 (1981), 1184–1187 ] |
3
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75. |
S. A. Alaverdyan, P. G. Eliseev, N. D. Zhukov, A. I. Popov, I. A. Skopin, V. I. Shveĭkin, “Radiative characteristics of an injection laser with a zigzag mesastripe AlGaAs–GaAs heterostructure”, Kvantovaya Elektronika, 8:7 (1981), 1565–1567 [Sov J Quantum Electron, 11:7 (1981), 941–942 ] |
76. |
V. Yu. Bazhenov, A. P. Bogatov, P. G. Eliseev, O. G. Okhotnikov, G. T. Pak, M. P. Rakhval'skiĭ, M. S. Soskin, V. B. Taranenko, K. A. Khaĭretdinov, “Bistable operation and spectral tuning of an injection laser with an external dispersive resonator”, Kvantovaya Elektronika, 8:4 (1981), 853–859 [Sov J Quantum Electron, 11:4 (1981), 510–513 ] |
5
|
77. |
P. G. Eliseev, I. N. Zavestovskaya, I. A. Poluektov, Yu. M. Popov, “Theory of stimulated glide of dislocations in laser semiconductor crystals under strong pumping conditions”, Kvantovaya Elektronika, 8:1 (1981), 206–209 [Sov J Quantum Electron, 11:1 (1981), 123–125 ] |
78. |
V. I. Borodulin, P. G. Eliseev, V. P. Konyaev, V. N. Morozov, S. A. Pashko, A. B. Sergeev, I. A. Skopin, V. I. Shveĭkin, “Characteristics of a channel injection heterojunction laser”, Kvantovaya Elektronika, 8:1 (1981), 193–196 [Sov J Quantum Electron, 11:1 (1981), 113–115 ] |
1
|
|
1980 |
79. |
V. Yu. Bazhenov, A. P. Bogatov, Yu. V. Gurov, P. G. Eliseev, O. G. Okhotnikov, G. T. Pak, M. P. Rakhval'skiĭ, M. S. Soskin, V. B. Taranenko, K. A. Khaĭretdinov, “Optical heterodyning of radiation from an injection laser with an external dispersive resonator”, Kvantovaya Elektronika, 7:12 (1980), 2642–2644 [Sov J Quantum Electron, 10:12 (1980), 1546–1547 ] |
4
|
80. |
P. G. Eliseev, M. Sh. Kobyakova, G. T. Pak, V. V. Popovichev, S. N. Sokolov, “Mesastripe injection heterolaser with heat removal through the substrate”, Kvantovaya Elektronika, 7:11 (1980), 2504–2506 [Sov J Quantum Electron, 10:11 (1980), 1464–1465 ] |
81. |
A. P. Bogatov, P. G. Eliseev, G. T. Mikayelyan, B. N. Sverdlov, “Injection $GaInPAs/InP$ heterojunction laser with $6-7^\circ$ output divergence, emitting nonwaveguide modes”, Kvantovaya Elektronika, 7:11 (1980), 2487–2488 [Sov J Quantum Electron, 10:11 (1980), 1450–1451 ] |
82. |
Yu. A. Vasil'ev, Yu. V. Dmitriev, P. G. Eliseev, I. A. Skopin, V. I. Stafeev, “Fast-response photodiode based on a surface-barrier $Au-nn^+-GaAs$ structure”, Kvantovaya Elektronika, 7:10 (1980), 2218–2221 [Sov J Quantum Electron, 10:10 (1980), 1288–1289 ] |
83. |
P. G. Eliseev, V. N. Morozov, S. A. Pashko, A. B. Sergeev, I. A. Skopin, “Broadening of spectral modes of a semiconductor laser in the case of pulsations of the emission intensity”, Kvantovaya Elektronika, 7:10 (1980), 2197–2201 [Sov J Quantum Electron, 10:10 (1980), 1273–1275 ] |
1
|
84. |
V. V. Bezotosnyi, L. M. Dolginov, P. G. Eliseev, M. G. Mil'vidskii, B. N. Sverdlov, E. G. Shevchenko, G. V. Shepekina, “Buried mesastripe cw room-temperature $GaInPAs/InP$ heterojunction lasers in the $1,24-1,28\mu m$ wavelength range”, Kvantovaya Elektronika, 7:9 (1980), 1990–1992 [Sov J Quantum Electron, 10:9 (1980), 1146–1148 ] |
2
|
85. |
P. G. Eliseev, V. N. Lavrov, “Use of injection heterojunction lasers in fiber-optic communications systems (review)”, Kvantovaya Elektronika, 7:9 (1980), 1845–1868 [Sov J Quantum Electron, 10:9 (1980), 1065–1078 ] |
1
|
86. |
P. G. Eliseev, O. G. Okhotnikov, G. T. Pak, “Properties of planar stripe-geometry heterojunction lasers. II. Analysis of electrical characteristics”, Kvantovaya Elektronika, 7:8 (1980), 1670–1676 [Sov J Quantum Electron, 10:8 (1980), 966–969 ] |
5
|
87. |
A. P. Bogatov, P. G. Eliseev, O. G. Okhotnikov, G. T. Pak, “Properties of planar stripe-geometry heterojunction lasers. I. Nonlinear and discontinuous current-power characteristics”, Kvantovaya Elektronika, 7:8 (1980), 1664–1669 [Sov J Quantum Electron, 10:8 (1980), 963–966 ] |
1
|
88. |
P. G. Eliseev, M. A. Osinski, “Use of the Epstein dielectric model to describe modes of planar stripe-geometry heterojunction lasers”, Kvantovaya Elektronika, 7:7 (1980), 1407–1416 [Sov J Quantum Electron, 10:7 (1980), 811–816 ] |
1
|
89. |
A. P. Bogatov, P. G. Eliseev, M. A. Man'ko, G. T. Mikayelyan, Yu. M. Popov, “Injection laser with an unstable resonator”, Kvantovaya Elektronika, 7:5 (1980), 1089–1092 [Sov J Quantum Electron, 10:5 (1980), 620–622 ] |
35
|
90. |
S. A. Alaverdyan, V. Yu. Bazhenov, A. P. Bogatov, Yu. V. Gurov, P. G. Eliseev, O. G. Okhotnikov, G. T. Pak, M. P. Rakhval'skiĭ, K. A. Khaĭretdinov, “Stepped shape of radiation pulses emitted by double-heterostructure GaAs–AlGaAs injection lasers with stripe contacts”, Kvantovaya Elektronika, 7:1 (1980), 123–127 [Sov J Quantum Electron, 10:1 (1980), 68–71 ] |
2
|
91. |
Ya. A. Aarik, L. M. Dolginov, A. E. Drakin, L. V. Druzhinina, P. G. Eliseev, P. A. Lyuk, B. N. Sverdlov, V. A. Skripkin, L. V. Friedentkhal', “Properties of AIGaAsSb–GaSb heterojunction injection lasers in the 1.4–1.8 $\mu m$ wavelength range”, Kvantovaya Elektronika, 7:1 (1980), 91–96 [Sov J Quantum Electron, 10:1 (1980), 50–53 ] |
9
|
|
1979 |
92. |
A. P. Bogatov, P. G. Eliseev, M. A. Man'ko, G. T. Mikayelyan, G. G. Kharisov, “Reduction of the divergence of injection laser radiation by excitation of nonwaveguide modes”, Kvantovaya Elektronika, 6:12 (1979), 2639–2641 [Sov J Quantum Electron, 9:12 (1979), 1567–1568] |
93. |
R. Altynbaev, P. G. Eliseev, I. Ismailov, G. Li, N. Shokhudzhaev, “Diode simulators of solid-state lasers”, Kvantovaya Elektronika, 6:12 (1979), 2617–2618 [Sov J Quantum Electron, 9:12 (1979), 1550–1551] |
94. |
P. G. Eliseev, “Interpretation of frequency self-modulation of semiconductor laser radiation”, Kvantovaya Elektronika, 6:10 (1979), 2243–2245 [Sov J Quantum Electron, 9:10 (1979), 1316–1317] |
3
|
95. |
A. P. Bogatov, Yu. V. Gurov, P. G. Eliseev, O. G. Okhotnikov, G. T. Pak, A. I. Petrov, K. A. Khaĭretdinov, “Single-frequency cw injection heterolaser tunable by an external dispersive resonator”, Kvantovaya Elektronika, 6:6 (1979), 1264–1270 [Sov J Quantum Electron, 9:6 (1979), 743–747] |
5
|
96. |
P. G. Eliseev, I. N. Zavestovskaya, I. A. Poluektov, Yu. M. Popov, “Theory of defect-forming resonance electron capture in laser crystals”, Kvantovaya Elektronika, 6:5 (1979), 1057–1061 [Sov J Quantum Electron, 9:5 (1979), 619–621] |
|
1978 |
97. |
A. P. Bogatov, P. G. Eliseev, O. G. Okhotnikov, G. T. Pak, “Hysteresis of the output radiation power of cw AlGaAs heterolasers”, Kvantovaya Elektronika, 5:11 (1978), 2493–2495 [Sov J Quantum Electron, 8:11 (1978), 1408–1409] |
3
|
98. |
L. M. Dolginov, A. E. Drakin, P. G. Eliseev, T. V. Berdnikova, M. G. Mil'vidskii, V. P. Orlov, Yu. K. Panteleev, B. N. Sverdlov, E. G. Shevchenko, “High-efficiency GaInPAs/InP light-emitting diodes”, Kvantovaya Elektronika, 5:11 (1978), 2488–2489 [Sov J Quantum Electron, 8:11 (1978), 1404–1405] |
99. |
A. P. Bogatov, P. G. Eliseev, Yu. M. Popov, E. G. Sukhov, K. A. Khaĭretdinov, “Anomalous stimulated emission kinetics of semiconductor lasers with asymmetric waveguide structures. II. Theory”, Kvantovaya Elektronika, 5:11 (1978), 2408–2415 [Sov J Quantum Electron, 8:11 (1978), 1351–1355] |
1
|
100. |
A. P. Bogatov, Yu. V. Gurov, P. G. Eliseev, K. A. Khaĭretdinov, “Anomalous stimulated emission kinetics of semiconductor lasers with asymmetric waveguide structures. I. Experimental investigation using an external resonator”, Kvantovaya Elektronika, 5:11 (1978), 2402–2407 [Sov J Quantum Electron, 8:11 (1978), 1348–1351] |
1
|
101. |
P. G. Eliseev, V. N. Lavrov, Yu. M. Popov, “Influence of the operation regime of an injection laser on the efficiency of coupling of its radiation into an optical waveguide”, Kvantovaya Elektronika, 5:9 (1978), 2038–2041 [Sov J Quantum Electron, 8:9 (1978), 1150–1152] |
102. |
L. M. Dolginov, L. V. Druzhinina, P. G. Eliseev, A. N. Lapshin, M. G. Mil'vidskii, B. N. Sverdlov, “Injection heterolaser based on InGaAsSb four-component solid solution”, Kvantovaya Elektronika, 5:3 (1978), 703–704 [Sov J Quantum Electron, 8:3 (1978), 416] |
19
|
103. |
H.-J. Bachert, A. P. Bogatov, P. G. Eliseev, “Mode deformation due to self-focusing in injection lasers and its connection with nonlinearity of the output characteristic”, Kvantovaya Elektronika, 5:3 (1978), 603–608 [Sov J Quantum Electron, 8:3 (1978), 346–349] |
11
|
104. |
P. G. Eliseev, I. N. Zavestovskaya, I. A. Poluéktov, “Mechanism of the displacement of atoms in laser crystals as a result of nonradiative recombination”, Kvantovaya Elektronika, 5:1 (1978), 203–206 [Sov J Quantum Electron, 8:1 (1978), 124–126] |
1
|
|
1977 |
105. |
I. Ismailov, N. Shokhudzhaev, D. Akhmedov, P. G. Eliseev, “Characteristics of <i>n</i>-GaP<sub><i>x</i></sub> As<sub>1–<i>x</i></sub>–<i>p</i>Ga<sub>1–<i>y</i></sub>Al<sub><i>y</i></sub>P<sub><i>x</i></sub>As<sub>1–<i>x</i></sub> heterojunction lasers emitting visible radiation”, Kvantovaya Elektronika, 4:8 (1977), 1821–1823 [Sov J Quantum Electron, 7:8 (1977), 1039–1040] |
106. |
O. I. Davarashvili, L. M. Dolginov, P. G. Eliseev, I. I. Zasavitskii, A. P. Shotov, “Multicomponent solid solutions of IV-VI compounds”, Kvantovaya Elektronika, 4:4 (1977), 904–907 [Sov J Quantum Electron, 7:4 (1977), 508–510] |
2
|
|
1976 |
107. |
A. P. Bogatov, H.-J. Bachert, P. G. Eliseev, A. Kler, M. A. Man'ko, “Radiative characteristics of an injection laser with an external resonator”, Kvantovaya Elektronika, 3:8 (1976), 1819–1821 [Sov J Quantum Electron, 6:8 (1976), 990–991] |
2
|
108. |
A. P. Bogatov, P. G. Eliseev, V. V. Mamutin, “Influence of excess carriers on the permittivity of GaAs at the frequency of radiative transitions in injection lasers”, Kvantovaya Elektronika, 3:7 (1976), 1609–1611 [Sov J Quantum Electron, 6:7 (1976), 873–874] |
2
|
109. |
L. M. Dolginov, P. G. Eliseev, M. G. Mil'vidskii, “Multicomponent semiconductor solid solutions and their laser applications (review)”, Kvantovaya Elektronika, 3:7 (1976), 1381–1393 [Sov J Quantum Electron, 6:7 (1976), 747–753] |
11
|
110. |
R. Altynbaev, L. M. Dolginov, L. V. Druzhinina, P. G. Eliseev, I. Ismailov, N. Shokhudzhaev, “Investigation of Al<sub><i>x</i></sub>Ga<sub>1–<i>x</i></sub>As injection heterolasers emitting visible radiation”, Kvantovaya Elektronika, 3:5 (1976), 1080–1084 [Sov J Quantum Electron, 6:5 (1976), 577–579] |
111. |
L. M. Dolginov, L. V. Druzhinina, P. G. Eliseev, I. V. Kryukova, V. I. Leskovich, M. G. Mil'vidskii, B. N. Sverdlov, V. A. Chapnin, “Luminescence and stimulated emission from Ga<sub><i>x</i></sub>ln<sub><i>1–x</i></sub>As<sub><i>y</i></sub>Sb<sub><i>1–y</i></sub>”, Kvantovaya Elektronika, 3:4 (1976), 932–934 [Sov J Quantum Electron, 6:4 (1976), 507–508] |
5
|
112. |
L. M. Dolginov, L. V. Druzhinina, P. G. Eliseev, M. G. Mil'vidskii, B. N. Sverdlov, “New uncooled injection heterolaser emitting in the 1.5–1.8 μ range”, Kvantovaya Elektronika, 3:2 (1976), 465–466 [Sov J Quantum Electron, 6:2 (1976), 257] |
11
|
|
1975 |
113. |
P. G. Eliseev, V. G. Il'in, G. O. Karapetyan, V. Ya. Livshits, G. D. Negodaev, A. V. Khaidarov, “Use of gradient light guides in semiconductor lasers”, Kvantovaya Elektronika, 2:4 (1975), 848–850 [Sov J Quantum Electron, 5:4 (1975), 472–473] |
114. |
P. G. Eliseev, A. V. Khaidarov, “Role of mechanical stresses in gradual degradation of light-emitting diodes and injection lasers”, Kvantovaya Elektronika, 2:1 (1975), 127–129 [Sov J Quantum Electron, 5:1 (1975), 73–74] |
4
|
|
1974 |
115. |
A. P. Bogatov, L. M. Dolginov, L. V. Druzhinina, P. G. Eliseev, B. N. Sverdlov, E. G. Shevchenko, “Heterojunction lasers made of Ga<sub><i>x</i></sub>In<sub>1–<i>x</i></sub>As<sub><i>y</i></sub>P<sub>1–<i>y</i></sub> and Al<sub><i>x</i></sub>Ga<sub>1–<i>x</i></sub>Sb<sub><i>y</i></sub>As<sub>1–<i>y</i></sub> solid solutions”, Kvantovaya Elektronika, 1:10 (1974), 2294–2295 [Sov J Quantum Electron, 4:10 (1975), 1281] |
66
|
116. |
A. P. Bogatov, P. G. Eliseev, B. N. Sverdlov, “Anomalous interaction of spectral modes in a semiconductor laser”, Kvantovaya Elektronika, 1:10 (1974), 2286–2288 [Sov J Quantum Electron, 4:10 (1975), 1275–1276] |
13
|
117. |
H. Bachert, P. G. Eliseev, M. A. Man'ko, V. K. Petrov, S. Raab, V. P. Strakhov, Ch. M. Tsai, “Interferometric investigations of the picosecond structure and conditions for the emission of ultrashort pulses from injection lasers”, Kvantovaya Elektronika, 1:9 (1974), 1988–1993 [Sov J Quantum Electron, 4:9 (1975), 1102–1105] |
5
|
118. |
P. G. Eliseev, I. Z. Pinsker, Yu. F. Fedorov, “Degradation of injection lasers during operation and under the influence of fast particles”, Kvantovaya Elektronika, 1:5 (1974), 1271–1273 [Sov J Quantum Electron, 4:5 (1974), 707–708] |
119. |
D. Akkerman, A. P. Bogatov, P. G. Eliseev, Z. Raab, B. N. Sverdlov, “Injection laser with a diffraction grating in its resonator”, Kvantovaya Elektronika, 1:5 (1974), 1145–1149 [Sov J Quantum Electron, 4:5 (1974), 626–628] |
2
|
120. |
P. G. Eliseev, Ch. M. Ts'ai, “Investigation of the relationships governing multimode excitation in injection lasers”, Kvantovaya Elektronika, 1:5 (1974), 1138–1144 [Sov J Quantum Electron, 4:5 (1974), 622–625] |
1
|
121. |
P. G. Eliseev, A. I. Krasil'nikov, A. V. Khaidarov, G. G. Kharisov, “Control of the polarization of heterolaser radiation by uniaxial compression”, Kvantovaya Elektronika, 1:1 (1974), 196–197 [Sov J Quantum Electron, 4:1 (1974), 120] |
122. |
P. G. Eliseev, L. P. Ivanov, A. S. Logginov, K. Ya. Senatorov, “Influence of microwave modulation on the emission spectrum of an injection laser”, Kvantovaya Elektronika, 1:1 (1974), 151–154 [Sov J Quantum Electron, 4:1 (1974), 86–87] |
2
|
|
1973 |
123. |
P. G. Eliseev, L. P. Ivanov, A. S. Logginov, E. P. Nikitin, “Internal Q switching in single-sided heterojunction injection lasers”, Kvantovaya Elektronika, 1973, no. 5(17), 116–117 [Sov J Quantum Electron, 3:5 (1974), 433–434] |
1
|
124. |
A. P. Bogatov, P. G. Eliseev, L. P. Ivanov, A. S. Logginov, K. Ya. Senatorov, “Kinetics of the emission spectrum of an injection laser and collapse of single-mode emission”, Kvantovaya Elektronika, 1973, no. 5(17), 14–20 [Sov J Quantum Electron, 3:5 (1974), 372–375] |
1
|
125. |
P. G. Eliseev, N. N. Shuikin, “Single-mode and single-frequency injection lasers (review)”, Kvantovaya Elektronika, 1973, no. 3(15), 5–26 [Sov J Quantum Electron, 3:3 (1973), 181–192] |
10
|
|
1972 |
126. |
P. G. Eliseev, “Heterojunction injection lasers (review)”, Kvantovaya Elektronika, 1972, no. 6(12), 3–28 [Sov J Quantum Electron, 2:6 (1973), 505–519] |
8
|
127. |
P. G. Eliseev, D. N. Morozov, Yu. F. Fedorov, “Statistical distribution of the failure of injection lasers”, Kvantovaya Elektronika, 1972, no. 3(9), 107 [Sov J Quantum Electron, 2:3 (1972), 292–293] |
128. |
P. G. Eliseev, I. Z. Pinsker, Yu. F. Fedorov, “Empirical estimation of the service life of injection lasers from short-term tests”, Kvantovaya Elektronika, 1972, no. 3(9), 105–106 [Sov J Quantum Electron, 2:3 (1972), 290–291] |
|
1971 |
129. |
A. P. Bogatov, P. G. Eliseev, V. I. Panteleev, E. G. Shevchenko, “Comparison of the instantaneous and averaged emission spectra of an injection laser operating under spiking conditions”, Kvantovaya Elektronika, 1971, no. 5, 93–95 [Sov J Quantum Electron, 1:5 (1972), 500–502] |
3
|
130. |
P. G. Eliseev, “Optimal thickness of the active layer in a heterojunction laser”, Kvantovaya Elektronika, 1971, no. 3, 120–121 [Sov J Quantum Electron, 1:3 (1971), 304–305] |
2
|
131. |
D. Akerman, P. G. Eliseev, A. Kaiper, M. A. Man'ko, Z. Raab, “Methods for mode selection in injection lasers”, Kvantovaya Elektronika, 1971, no. 1, 85–90 [Sov J Quantum Electron, 1:1 (1971), 60–64] |
9
|
|
|
|
1990 |
132. |
P. G. Eliseev, “Laser engineering”, UFN, 160:2 (1990), 338–339 ; Phys. Usp., 33:2 (1990), 168 |
|
1988 |
133. |
P. G. Eliseev, “Brief review of papers presented at the SELCO-87 Conference”, Kvantovaya Elektronika, 15:11 (1988), 2175–2177 [Sov J Quantum Electron, 18:11 (1988), 1365–1366 ] |
|
1978 |
134. |
P. G. Eliseev, M. A. Herman, “Second International School on Semiconductor Optoelectronics "Cetniewo, 1978"”, Kvantovaya Elektronika, 5:11 (1978), 2503–2506 [Sov J Quantum Electron, 8:11 (1978), 1415–1417] |
|
1977 |
135. |
E. M. Dianov, P. G. Eliseev, “Second Topical Meeting on Optical Fiber Transmission Williamsburg, Va., February 22–24,1977”, Kvantovaya Elektronika, 4:9 (1977), 2059–2065 [Sov J Quantum Electron, 7:9 (1977), 1185–1189] |
|
1976 |
136. |
P. G. Eliseev, M. A. Herman, “International Autumn School on Semiconductor Optoelectronics "Cetniewo 1975"”, Kvantovaya Elektronika, 3:3 (1976), 672–674 [Sov J Quantum Electron, 6:3 (1976), 375–376] |
|
1975 |
137. |
P. G. Eliseev, “First Ail-Union Conference on Physical Processes in Heterojunctions, Kishinev, October 30–November 1,1974”, Kvantovaya Elektronika, 2:3 (1975), 623–627 [Sov J Quantum Electron, 5:3 (1975), 353–355] |
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