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This article is cited in 3 scientific papers (total in 3 papers)
Laser system components
High-temperature properties of InGaN light-emitting diodes
I. V. Akimovaa, P. G. Eliseeva, M. A. Osinskib a P. N. Lebedev Physical Institute, Russian Academy of Sciences, Moscow
b Centre for High Technology Materials, University of New Mexico, USA
Abstract:
Properties of InGaN/GaN/AlGaN light-emitting heterostructure diodes generating visible radiation were investigated at elevated temperatures (up to 450 K). The optical power fell relatively slowly above room temperature and the characteristic temperature constant was T0* = 400 — 800 K. Auger recombination was not detected. The position of the spectral peak of Zn-doped diodes was practically independent of temperature. A red shift of the emission line of quantum-well diodes was observed with increase in temperature. This corresponded to a reduction in the band gap with a correction for the influence of the density-of- states tails.
Received: 24.07.1998
Citation:
I. V. Akimova, P. G. Eliseev, M. A. Osinski, “High-temperature properties of InGaN light-emitting diodes”, Kvantovaya Elektronika, 25:11 (1998), 1013–1016 [Quantum Electron., 28:11 (1998), 987–990]
Linking options:
https://www.mathnet.ru/eng/qe1370 https://www.mathnet.ru/eng/qe/v25/i11/p1013
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