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Kvantovaya Elektronika, 1985, Volume 12, Number 3, Pages 465–493 (Mi qe6286)  

This article is cited in 6 scientific papers (total in 6 papers)

Nonlinear refraction in semiconductor lasers (review)

A. P. Bogatov, P. G. Eliseev
Abstract: A strong optical nonlinearity is typical of semiconductors. A large contribution to the nonlinearity comes from the influence of free carriers on the refractive index and the carrier density itself depends on the intensity either because of photoelectric absorption or because of stimulated emission. In semiconductor lasers this gives rise to a number of effects, such as self-focusing, nonlinearity of the optical losses with associated emission dynamics anomalies, bistable operation in compound resonators and amplifiers, frequency self-modulation, and nonlinear scattering by electron density waves. Self-stabilization of single-frequency emission, which makes it possible to increase the intensity of coherent radiation emitted from a semiconductor laser, has the same physical basis as the aforementioned effects.
Received: 12.03.1984
English version:
Soviet Journal of Quantum Electronics, 1985, Volume 15, Issue 3, Pages 308–325
DOI: https://doi.org/10.1070/QE1985v015n03ABEH006286
Bibliographic databases:
Document Type: Article
UDC: 621.373.826.038.825.4
PACS: 42.55.Px, 42.60.Fc, 42.60.Lh, 42.60.Jf, 42.60.Da, 42.65.Jx
Language: Russian


Citation: A. P. Bogatov, P. G. Eliseev, “Nonlinear refraction in semiconductor lasers (review)”, Kvantovaya Elektronika, 12:3 (1985), 465–493 [Sov J Quantum Electron, 15:3 (1985), 308–325]
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  • https://www.mathnet.ru/eng/qe6286
  • https://www.mathnet.ru/eng/qe/v12/i3/p465
  • This publication is cited in the following 6 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Квантовая электроника Quantum Electronics
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