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Kvantovaya Elektronika, 1986, Volume 13, Number 9, Pages 1749–1769 (Mi qe7365)  

This article is cited in 4 scientific papers (total in 4 papers)

Causes and distribution of failure of semiconductor lasers (review)

P. G. Eliseev
Abstract: An analysis is made of the various factors that affect the reliability of semiconductor lasers and the results of laboratory service life tests are reviewed. The service life of GaAlAs/GaAs injection lasers exceeds 5×104 h and extrapolation of high-temperature tests suggests that it may exceed 106 h. Equally long service life is expected for InGaAsP/InP lasers and the published extrapolated values of the continuous service life exceed 1010h (at 10°C). The nature and the parameters of the distributions of failure are discussed and ways of forecasting the service life are considered.
Received: 25.02.1986
English version:
Soviet Journal of Quantum Electronics, 1986, Volume 16, Issue 9, Pages 1151–1164
DOI: https://doi.org/10.1070/QE1986v016n09ABEH007365
Bibliographic databases:
Document Type: Article
UDC: 621.373:826.038.825.4
PACS: 42.55.Px, 01.30.Vv, 42.60.Jf
Language: Russian


Citation: P. G. Eliseev, “Causes and distribution of failure of semiconductor lasers (review)”, Kvantovaya Elektronika, 13:9 (1986), 1749–1769 [Sov J Quantum Electron, 16:9 (1986), 1151–1164]
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  • https://www.mathnet.ru/eng/qe/v13/i9/p1749
  • This publication is cited in the following 4 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
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