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This article is cited in 4 scientific papers (total in 4 papers)
Causes and distribution of failure of semiconductor lasers (review)
P. G. Eliseev
Abstract:
An analysis is made of the various factors that affect the reliability of semiconductor lasers and the results of laboratory service life tests are reviewed. The service life of GaAlAs/GaAs injection lasers exceeds 5×104 h and extrapolation of high-temperature tests suggests that it may exceed 106 h. Equally long service life is expected for InGaAsP/InP lasers and the published extrapolated values of the continuous service life exceed 1010h (at 10°C). The nature and the parameters of the distributions of failure are discussed and ways of forecasting the service life are considered.
Received: 25.02.1986
Citation:
P. G. Eliseev, “Causes and distribution of failure of semiconductor lasers (review)”, Kvantovaya Elektronika, 13:9 (1986), 1749–1769 [Sov J Quantum Electron, 16:9 (1986), 1151–1164]
Linking options:
https://www.mathnet.ru/eng/qe7365 https://www.mathnet.ru/eng/qe/v13/i9/p1749
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