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Kvantovaya Elektronika, 2002, Volume 32, Number 12, Pages 1085–1098 (Mi qe2351)  

This article is cited in 5 scientific papers (total in 5 papers)

Special issue devoted to the 80th anniversary of academician N. G. Basov's birth

Semiconductor lasers: from homojunctions to quantum dots

P. G. Eliseevab

a P. N. Lebedev Physical Institute, Russian Academy of Sciences, Moscow
b Centre for High Technology Materials, University of New Mexico, USA
Full-text PDF (286 kB) Citations (5)
Abstract: A brief review of the development of physics and technology of semiconductor lasers, beginning from theoretical proposals made in the late 1950s up to now, is presented. For example, the threshold current density at room temperature, which was 105 – 106 A cm-2 in 1963, has been now reduced to ~10 A cm-2. The main factors that have provided this progress are considered. The mechanisms of energy conversion determining the high efficiency of semiconductor lasers are discussed in detail.
Received: 20.09.2002
English version:
Quantum Electronics, 2002, Volume 32, Issue 12, Pages 1085–1098
DOI: https://doi.org/10.1070/QE2002v032n12ABEH002351
Bibliographic databases:
Document Type: Article
PACS: 42.55.Px, 42.60.Lh
Language: Russian


Citation: P. G. Eliseev, “Semiconductor lasers: from homojunctions to quantum dots”, Kvantovaya Elektronika, 32:12 (2002), 1085–1098 [Quantum Electron., 32:12 (2002), 1085–1098]
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  • https://www.mathnet.ru/eng/qe/v32/i12/p1085
  • This publication is cited in the following 5 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
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