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Kvantovaya Elektronika, 2000, Volume 30, Number 2, Pages 152–157 (Mi qe1677)  

This article is cited in 2 scientific papers (total in 2 papers)

Invited paper

Analysis of absorption and amplification in a unipolar semiconductor structure with quantum dots

P. G. Eliseev

P. N. Lebedev Physical Institute, Russian Academy of Sciences, Moscow
Full-text PDF (219 kB) Citations (2)
Abstract: The allowed intraband optical transitions in a quantum dot are considered in the context of their application in quantum-well IR detectors and unipolar semiconductor lasers. The atom-like quantum dot is described by using the harmonic oscillator model. An expression is obtained for the absorption cross section which is independent of the wavelength and the quantum-dot size. Optical absorption and amplification are estimated.
Received: 21.06.1999
English version:
Quantum Electronics, 2000, Volume 30, Issue 2, Pages 152–157
DOI: https://doi.org/10.1070/QE2000v030n02ABEH001677
Bibliographic databases:
Document Type: Article
PACS: 42.55.Px, 73.20.Dx, 85.30.Vw
Language: Russian


Citation: P. G. Eliseev, “Analysis of absorption and amplification in a unipolar semiconductor structure with quantum dots”, Kvantovaya Elektronika, 30:2 (2000), 152–157 [Quantum Electron., 30:2 (2000), 152–157]
Linking options:
  • https://www.mathnet.ru/eng/qe1677
  • https://www.mathnet.ru/eng/qe/v30/i2/p152
  • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Квантовая электроника Quantum Electronics
    Statistics & downloads:
    Abstract page:116
    Full-text PDF :165
    First page:1
     
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