Qualitative analysis of the threshold current of quantum-size semiconductor lasers

Characteristics of quantum-size planar and filamentary laser structures are analyzed from the point of view of the threshold current and its temperature dependence. The factor which influences the temperature dependence is the form of the density-of-states function which is different for a quantum-size laser. The conditions favoring weakening of the influence of temperature are considered and a study is made of the characteristics of carrier capture and optical confinement in a laser.