P. G. Eliseev, H. Li, G. T. Liu, A. Shtints, T. C. Newell, L. E. Lester, K. J. Malloy, “Optical gain in InAs/InGaAs quantum-dot structures: Experiments and theoretical model”, Kvantovaya Elektronika, 30:8 (2000), 664–668 [Quantum Electron., 30:8 (2000), 664

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Kvantovaya Elektronika, 2000, Volume 30, Number 8, Pages 664–668 (Mi qe1787)

This article is cited in 10 scientific papers (total in 10 papers)

Lasers

Optical gain in InAs/InGaAs quantum-dot structures: Experiments and theoretical model

P. G. Eliseev^a, H. Li^b, G. T. Liu^b, A. Shtints^b, T. C. Newell^b, L. E. Lester^b, K. J. Malloy^b

^a P. N. Lebedev Physical Institute, Russian Academy of Sciences, Moscow
^b Centre for High Technology Materials, University of New Mexico, USA

Full-text PDF (226 kB) Citations (10)

Abstract: The dependence of the mode optical gain on current in InAs/InGaAs quantum-dot structures grown by the method of molecular-beam epitaxy is obtained from the experimental study of ultra-low-threshold laser diodes. The record lowest inversion threshold at room temperature was about 13 A cm². A theoretical model is proposed that relates the optical gain to the ground-state transitions in quantum dots. The effective gain cross section is estimated to be ~7 × 10^–15 cm^–2.

Received: 23.03.2000

English version:
Quantum Electronics, 2000, Volume 30, Issue 8, Pages 664–668
DOI: https://doi.org/10.1070/QE2000v030n08ABEH001787

Bibliographic databases:

Document Type: Article

PACS: 42.55.Px, 42.60.Jf

Language: Russian

Citation: P. G. Eliseev, H. Li, G. T. Liu, A. Shtints, T. C. Newell, L. E. Lester, K. J. Malloy, “Optical gain in InAs/InGaAs quantum-dot structures: Experiments and theoretical model”, Kvantovaya Elektronika, 30:8 (2000), 664–668 [Quantum Electron., 30:8 (2000), 664–668]

Linking options:

https://www.mathnet.ru/eng/qe1787

https://www.mathnet.ru/eng/qe/v30/i8/p664

This publication is cited in the following 10 articles:

Urbas A.M., Jacob Z., Dal Negro L., Engheta N., Boardman A.D., Egan P., Khanikaev A.B., Menon V., Ferrera M., Kinsey N., DeVault C., Kim J., Shalaev V., Boltasseva A., Valentine J., Pfeiffer C., Grbic A., Narimanov E., Zhu L., Fan Sh., Alu A., Poutrina E., Litchinitser N.M., Noginov M.A., MacDonald K.F., Plum E., Liu X., Nealey P.F., Kagan Ch.R., Murray Ch.B., Pawlak D.A., Smolyaninov I.I., Smolyaninova V.N., Chanda D., J. Opt., 18:9 (2016), 093005
Z.W. Chen, Z. Jiao, M.H. Wu, C.H. Shek, C.M.L. Wu, J.K.L. Lai, Progress in Materials Science, 56:7 (2011), 901
Z. G. Xie, G. S. Solomon, Applied Physics Letters, 87:9 (2005)
A.V. Uskov, E.P. O'Reilly, M. Laemmlin, N.N. Ledentsov, D. Bimberg, Optics Communications, 248:1-3 (2005), 211
A.V. Uskov, T.W. Berg, J. Mork, IEEE J. Quantum Electron., 40:3 (2004), 306
Dan P Popescu, Peter G Eliseev, Andreas Stintz, Kevin J Malloy, Semicond. Sci. Technol., 19:1 (2004), 33
A.V. Uskov, J. Mørk, B. Tromborg, T.W. Berg, I. Magnusdottir, E.P. O'Reilly, Optics Communications, 227:4-6 (2003), 363
J. Thomas Andrews, Pratima Sen, Journal of Applied Physics, 91:5 (2002), 2827
Pratima Sen, J.Thomas Andrews, Solid State Communications, 120:5-6 (2001), 195
P.G. Eliseev, H. Li, T. Liu, T.C. Newell, L.F. Lester, K.J. Malloy, IEEE J. Select. Topics Quantum Electron., 7:2 (2001), 135

Citing articles in Google Scholar: Russian citations, English citations
Related articles in Google Scholar: Russian articles, English articles

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