Optical strength of the mirror faces of a pulsed InGaAs/GaAs/GaAIAs semiconductor laser

Measurements were made of the pulsed power at the optical self-damage threshold of quantum-well laser diodes emitting in the wavelength range 960–980 nm and based on a heterostructure with a strained active layer. When the pulse duration was 100 ns, the optical strength of a mirror end face was estimated to be 80–90 MW cm^-2, which was considerably higher than for semiconductor lasers emitting at shorter wavelengths.