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This article is cited in 2 scientific papers (total in 2 papers)
Brief Communications
Buried mesastripe cw room-temperature $GaInPAs/InP$ heterojunction lasers in the $1,24-1,28\mu m$ wavelength range
V. V. Bezotosnyiab, L. M. Dolginovab, P. G. Eliseevab, M. G. Mil'vidskiiab, B. N. Sverdlovab, E. G. Shevchenkoab, G. V. Shepekinaab a P. N. Lebedev Physical Institute, the USSR Academy of Sciences
b The Federal State Research and Design Institute of Rare Metal Industry, Moscow
Abstract:
Continuous-wave heterojunction lasers utilizing an isoperiodic system of quaternary $GaInPAs$ solid solutions, fabricated by liquid-phase epitaxy on $p-InP$ substrates, were built and investigated. The lasers operated at room temperature in the $1,24-1,28\mu m$ spectral range optimal for use in fiber-optical communication systems. The lasers had a buried mesastripe structure with two-dimensional optical confinement. The lowest threshold current at room temperature was 30 mA and the single-mode output power was 5-7 mW. The highest operating temperature was 85 degree C.
Received: 02.06.1980
Citation:
V. V. Bezotosnyi, L. M. Dolginov, P. G. Eliseev, M. G. Mil'vidskii, B. N. Sverdlov, E. G. Shevchenko, G. V. Shepekina, “Buried mesastripe cw room-temperature $GaInPAs/InP$ heterojunction lasers in the $1,24-1,28\mu m$ wavelength range”, Kvantovaya Elektronika, 7:9 (1980), 1990–1992 [Sov J Quantum Electron, 10:9 (1980), 1146–1148]
Linking options:
https://www.mathnet.ru/eng/qe10680 https://www.mathnet.ru/eng/qe/v7/i9/p1990
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