Luminescence and stimulated emission from Gaxln1–xAsySb1–y

Epitaxial films and double heterostructures based on Ga_xln_1–xAs_ySb_1–y were prepared and investigated by the photoluminescence method. The external quantum efficiency of electroluminescence emitted from the diodes at λ~2 μ was about 1% (300°K). When epitaxial films were pumped with an electron beam of 50 keV energy, stimulated emission was observed in the spectral range 1.95–2.0 μ (77°K) and the output power per pulse was up to 60 W for a threshold electron-beam current density of 0.5–1 A/cm².