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This article is cited in 19 scientific papers (total in 19 papers)
Brief Communications
Injection heterolaser based on InGaAsSb four-component solid solution
L. M. Dolginov, L. V. Druzhinina, P. G. Eliseev, A. N. Lapshin, M. G. Mil'vidskii, B. N. Sverdlov
Abstract:
Stimulated emission was obtained at the wavelength of 1.9 μ from a GaSb/InGaAsSb/GaSb heterostructure using an injection current of 900 A/cm2 density at 90° K.
Received: 01.12.1977
Citation:
L. M. Dolginov, L. V. Druzhinina, P. G. Eliseev, A. N. Lapshin, M. G. Mil'vidskii, B. N. Sverdlov, “Injection heterolaser based on InGaAsSb four-component solid solution”, Kvantovaya Elektronika, 5:3 (1978), 703–704 [Sov J Quantum Electron, 8:3 (1978), 416]
Linking options:
https://www.mathnet.ru/eng/qe10046 https://www.mathnet.ru/eng/qe/v5/i3/p703
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Abstract page: | 160 | Full-text PDF : | 78 |
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