L. M. Dolginov, L. V. Druzhinina, P. G. Eliseev, A. N. Lapshin, M. G. Mil'vidskii, B. N. Sverdlov, “Injection heterolaser based on InGaAsSb four-component solid solution”, Kvantovaya Elektronika, 5:3 (1978), 703–704 [Sov J Quantum Electron, 8:3 (1978), 416]

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Kvantovaya Elektronika, 1978, Volume 5, Number 3, Pages 703–704 (Mi qe10046)

This article is cited in 19 scientific papers (total in 19 papers)

Brief Communications

Injection heterolaser based on InGaAsSb four-component solid solution

L. M. Dolginov, L. V. Druzhinina, P. G. Eliseev, A. N. Lapshin, M. G. Mil'vidskii, B. N. Sverdlov

Full-text PDF (227 kB) Citations (19)

Abstract: Stimulated emission was obtained at the wavelength of 1.9 μ from a GaSb/InGaAsSb/GaSb heterostructure using an injection current of 900 A/cm² density at 90° K.

Received: 01.12.1977

English version:
Soviet Journal of Quantum Electronics, 1978, Volume 8, Issue 3, Pages 416
DOI: https://doi.org/10.1070/QE1978v008n03ABEH010046

Document Type: Article

UDC: 621.382.3

PACS: 42.55.Px, 73.40.Lq

Language: Russian

Citation: L. M. Dolginov, L. V. Druzhinina, P. G. Eliseev, A. N. Lapshin, M. G. Mil'vidskii, B. N. Sverdlov, “Injection heterolaser based on InGaAsSb four-component solid solution”, Kvantovaya Elektronika, 5:3 (1978), 703–704 [Sov J Quantum Electron, 8:3 (1978), 416]

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https://www.mathnet.ru/eng/qe10046

https://www.mathnet.ru/eng/qe/v5/i3/p703

This publication is cited in the following 19 articles:

Citing articles in Google Scholar: Russian citations, English citations
Related articles in Google Scholar: Russian articles, English articles

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