L. M. Dolginov, A. E. Drakin, P. G. Eliseev, B. N. Sverdlov, V. A. Skripkin, E. G. Shevchenko, “Injection InGaAsP/lnP lasers with a threshold current density of 0.5 kA/cm2 at 300 К”, Kvantovaya Elektronika, 11:4 (1984), 645–646 [Sov J Quantum Electron, 14:4 (1984), 439

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Kvantovaya Elektronika, 1984, Volume 11, Number 4, Pages 645–646 (Mi qe4986)

This article is cited in 3 scientific papers (total in 3 papers)

Letters to the editor

Injection InGaAsP/lnP lasers with a threshold current density of 0.5 kA/cm² at 300 К

L. M. Dolginov, A. E. Drakin, P. G. Eliseev, B. N. Sverdlov, V. A. Skripkin, E. G. Shevchenko

Full-text PDF (334 kB) Citations (3)

Abstract: Double-sided heterostructures with a three-layer waveguide including a thin (of thickness less than 0.1 μ) narrow-gap active layer were formed by the liquid epitaxy method on p-type InP substrates. The threshold current density in high-Q four-sided cavities was reduced to 512 A/cm² at room temperature and continuous emission was observed from broad-area diodes.

Received: 29.11.1983

English version:
Soviet Journal of Quantum Electronics, 1984, Volume 14, Issue 4, Pages 439–441
DOI: https://doi.org/10.1070/QE1984v014n04ABEH004986

Bibliographic databases:

Document Type: Article

UDC: 621.373.826.038.825.4

PACS: 42.55.Px, 42.60.By, 42.60.Da, 42.60.Pk, 42.60.Jf, 42.79.Gn

Language: Russian

Citation: L. M. Dolginov, A. E. Drakin, P. G. Eliseev, B. N. Sverdlov, V. A. Skripkin, E. G. Shevchenko, “Injection InGaAsP/lnP lasers with a threshold current density of 0.5 kA/cm² at 300 К”, Kvantovaya Elektronika, 11:4 (1984), 645–646 [Sov J Quantum Electron, 14:4 (1984), 439–441]

Linking options:

https://www.mathnet.ru/eng/qe4986

https://www.mathnet.ru/eng/qe/v11/i4/p645

This publication is cited in the following 3 articles:

Citing articles in Google Scholar: Russian citations, English citations
Related articles in Google Scholar: Russian articles, English articles

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