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Kvantovaya Elektronika, 1976, Volume 3, Number 7, Pages 1609–1611 (Mi qe11721)  

This article is cited in 2 scientific papers (total in 2 papers)

Brief Communications

Influence of excess carriers on the permittivity of GaAs at the frequency of radiative transitions in injection lasers

A. P. Bogatov, P. G. Eliseev, V. V. Mamutin
Full-text PDF (536 kB) Citations (2)
Abstract: A change in the resonance frequencies of the Fabry-Perot resonator of a GaAs laser diode with increasing pump current was detected and investigated. The value of δε/δN (e is the permittivity and N is the density of free electrons) was 2.6×10cm–20 cm3 when the current density was 15 kA/cm2, temperature was 300°K, and wavelength was about 901 nm.
Received: 26.01.1976
English version:
Soviet Journal of Quantum Electronics, 1976, Volume 6, Issue 7, Pages 873–874
DOI: https://doi.org/10.1070/QE1976v006n07ABEH011721
Document Type: Article
UDC: 539.293:537.226.2+621.378.35
PACS: 42.60.Lh
Language: Russian


Citation: A. P. Bogatov, P. G. Eliseev, V. V. Mamutin, “Influence of excess carriers on the permittivity of GaAs at the frequency of radiative transitions in injection lasers”, Kvantovaya Elektronika, 3:7 (1976), 1609–1611 [Sov J Quantum Electron, 6:7 (1976), 873–874]
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  • https://www.mathnet.ru/eng/qe/v3/i7/p1609
  • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    Квантовая электроника Quantum Electronics
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