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This article is cited in 2 scientific papers (total in 2 papers)
Brief Communications
Influence of excess carriers on the permittivity of GaAs at the frequency of radiative transitions in injection lasers
A. P. Bogatov, P. G. Eliseev, V. V. Mamutin
Abstract:
A change in the resonance frequencies of the Fabry-Perot resonator of a GaAs laser diode with increasing pump current was detected and investigated. The value of δε/δN (e is the permittivity and N is the density of free electrons) was 2.6×10cm–20 cm3 when the current density was 15 kA/cm2, temperature was 300°K, and wavelength was about 901 nm.
Received: 26.01.1976
Citation:
A. P. Bogatov, P. G. Eliseev, V. V. Mamutin, “Influence of excess carriers on the permittivity of GaAs at the frequency of radiative transitions in injection lasers”, Kvantovaya Elektronika, 3:7 (1976), 1609–1611 [Sov J Quantum Electron, 6:7 (1976), 873–874]
Linking options:
https://www.mathnet.ru/eng/qe11721 https://www.mathnet.ru/eng/qe/v3/i7/p1609
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Abstract page: | 464 | Full-text PDF : | 74 |
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