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Kvantovaya Elektronika, 1976, Volume 3, Number 2, Pages 465–466 (Mi qe10979)  

This article is cited in 11 scientific papers (total in 11 papers)

Brief Communications

New uncooled injection heterolaser emitting in the 1.5–1.8 μ range

L. M. Dolginov, L. V. Druzhinina, P. G. Eliseev, M. G. Mil'vidskii, B. N. Sverdlov
Abstract: A double sided AlxGa1–xSb1–yAsy–GaSb–AlxGa1–xSb1–yAsy heterostructure was used in an injection laser which emitted stimulated radiation of 1.5–1.8 μ wavelengths at room or lower temperatures. The threshold current density was 220 A/cm2 at 77°K and 6.2 kA/cm2 at 300°K.
Received: 20.11.1975
English version:
Soviet Journal of Quantum Electronics, 1976, Volume 6, Issue 2, Pages 257
DOI: https://doi.org/10.1070/QE1976v006n02ABEH010979
Document Type: Article
UDC: 621.382.3
PACS: 42.60.Jf
Language: Russian


Citation: L. M. Dolginov, L. V. Druzhinina, P. G. Eliseev, M. G. Mil'vidskii, B. N. Sverdlov, “New uncooled injection heterolaser emitting in the 1.5–1.8 μ range”, Kvantovaya Elektronika, 3:2 (1976), 465–466 [Sov J Quantum Electron, 6:2 (1976), 257]
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  • https://www.mathnet.ru/eng/qe/v3/i2/p465
  • This publication is cited in the following 11 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    Квантовая электроника Quantum Electronics
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