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Kvantovaya Elektronika, 1981, Volume 8, Number 9, Pages 1994–1996 (Mi qe8309)  

This article is cited in 2 scientific papers (total in 2 papers)

Brief Communications

Mode composition of radiation from mesastripe GalnPAs–lnP heterojunction lasers buried in InP or GalnPAs

V. V. Bezotosnyi, L. M. Dolginov, P. G. Eliseev, B. N. Sverdlov, E. G. Shevchenko, G. V. Shepekina
Full-text PDF (585 kB) Citations (2)
Abstract: An experimental investigation was made of the influence of the material used to bury mesastripe GalnPAs–lnP laser heterostructures emitting in the 1.3 μ wavelength range on the order of the transverse modes of the laser radiation. Indium phosphide or GalnPAs (with a 1.17 eV band gap) were used for burial. It was found that the maximum single-mode width of the emission zone increased from 3 μ in the first case to ~9 μ in the second case (for an active layer 0.25 μ thick). Leaky-mode lasing was obtained in an "antiguiding" strip structure with a thickness of 0.13 μ. Some characteristics of burial using a quaternary solid solution are discussed.
Received: 14.05.1981
English version:
Soviet Journal of Quantum Electronics, 1981, Volume 11, Issue 9, Pages 1208–1209
DOI: https://doi.org/10.1070/QE1981v011n09ABEH008309
Bibliographic databases:
Document Type: Article
UDC: 621.378.3
PACS: 42.55.Px, 73.40.Lq
Language: Russian


Citation: V. V. Bezotosnyi, L. M. Dolginov, P. G. Eliseev, B. N. Sverdlov, E. G. Shevchenko, G. V. Shepekina, “Mode composition of radiation from mesastripe GalnPAs–lnP heterojunction lasers buried in InP or GalnPAs”, Kvantovaya Elektronika, 8:9 (1981), 1994–1996 [Sov J Quantum Electron, 11:9 (1981), 1208–1209]
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  • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Квантовая электроника Quantum Electronics
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