È. M. Belenov, P. G. Eliseev, A. N. Oraevsky, V. I. Romanenko, A. G. Sobolev, A. V. Uskov, “Analysis of optical amplification due to tunneling of electrons in a quantum-well semiconductor heterostructure”, Kvantovaya Elektronika, 15:8 (1988), 1595–1601 [Sov J Quantum Electron, 18:8 (1988), 995

Kvantovaya Elektronika

RUS ENG

JOURNALS PEOPLE ORGANISATIONS CONFERENCES SEMINARS VIDEO LIBRARY PACKAGE AMSBIB

JavaScript is disabled in your browser. Please switch it on to enable full functionality of the website

	General information
	Latest issue
	Archive
	Impact factor
	Submit a manuscript

	Search papers
	Search references

	RSS
	Latest issue
	Current issues
	Archive issues
	What is RSS

Kvantovaya Elektronika:
Year:
Volume:
Issue:
Page:
	Find

Personal entry:
Login:
Password:
	Save password
	Enter
	Forgotten password?
	Register

Kvantovaya Elektronika, 1988, Volume 15, Number 8, Pages 1595–1601 (Mi qe12392)

This article is cited in 1 scientific paper (total in 1 paper)

Nonlinear optical effects and devices

Analysis of optical amplification due to tunneling of electrons in a quantum-well semiconductor heterostructure

È. M. Belenov, P. G. Eliseev, A. N. Oraevsky, V. I. Romanenko, A. G. Sobolev, A. V. Uskov

Full-text PDF (1209 kB) Citations (1)

Abstract: A theoretical investigation is made of the optical properties of quantum-well tunnel semiconductor structures. It is shown that resonant tunneling accompanied by the absorption and emission of electromagnetic radiation quanta makes it possible, in particular, to amplify light in such structures and the gain profile may be tunable by the application of a voltage.

Received: 06.05.1987

English version:
Soviet Journal of Quantum Electronics, 1988, Volume 18, Issue 8, Pages 995–999
DOI: https://doi.org/10.1070/QE1988v018n08ABEH012392

Bibliographic databases:

Document Type: Article

PACS: 78.67.De, 68.65.Fg, 73.40.Gk

Language: Russian

Citation: È. M. Belenov, P. G. Eliseev, A. N. Oraevsky, V. I. Romanenko, A. G. Sobolev, A. V. Uskov, “Analysis of optical amplification due to tunneling of electrons in a quantum-well semiconductor heterostructure”, Kvantovaya Elektronika, 15:8 (1988), 1595–1601 [Sov J Quantum Electron, 18:8 (1988), 995–999]

Linking options:

https://www.mathnet.ru/eng/qe12392

https://www.mathnet.ru/eng/qe/v15/i8/p1595

This publication is cited in the following 1 articles:

Citing articles in Google Scholar: Russian citations, English citations
Related articles in Google Scholar: Russian articles, English articles

Statistics & downloads:
Abstract page:	117
Full-text PDF :	120
First page:	1

Что такое QR-код?

Registration to the website

Logotypes