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Uspekhi Fizicheskikh Nauk, 1986, Volume 148, Number 1, Pages 35–53
DOI: https://doi.org/10.3367/UFNr.0148.198601c.0035 (Mi ufn8055) 		 
This article is cited in 9 scientific papers (total in 9 papers)

CELEBRATING 25 YEARS OF THE LASER

Semiconductor lasers

N. G. Basov, P. G. Eliseev, Yu. M. Popov

P. N. Lebedev Physical Institute, the USSR Academy of Sciences, Moscow
Full-text PDF (2053 kB) Citations (9)
DOI: https://doi.org/10.3367/UFNr.0148.198601c.0035
Abstract: Recent advances in the field of semiconductor lasers are treated–injection lasers and lasers excited with fast electrons. Considerable attention is paid to new, four–component heterostructures and ultrathin active layers for injection lasers. Data are given on the fundamental fields of applications of semiconductor lasers.
English version:
Physics–Uspekhi, 1986, Volume 29, Issue 1, Pages 20–30
DOI: https://doi.org/10.1070/PU1986v029n01ABEH003078
Document Type: Article
UDC: 621.378.35
PACS: 42.55.Px, 42.60.By, 42.70.Hj, 42.70.Nq
Language: Russian
Citation: N. G. Basov, P. G. Eliseev, Yu. M. Popov, “Semiconductor lasers”, UFN, 148:1 (1986), 35–53; Phys. Usp., 29:1 (1986), 20–30
Citation in format AMSBIB
\Bibitem{BasEliPop86}
\by N.~G.~Basov, P.~G.~Eliseev, Yu.~M.~Popov
\paper Semiconductor lasers
\jour UFN
\yr 1986
\vol 148
\issue 1
\pages 35--53
\mathnet{http://mi.mathnet.ru/ufn8055}
\crossref{https://doi.org/10.3367/UFNr.0148.198601c.0035}
\transl
\jour Phys. Usp.
\yr 1986
\vol 29
\issue 1
\pages 20--30
\crossref{https://doi.org/10.1070/PU1986v029n01ABEH003078}
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    • This publication is cited in the following 9 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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