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This article is cited in 9 scientific papers (total in 9 papers)
CELEBRATING 25 YEARS OF THE LASER
Semiconductor lasers
N. G. Basov, P. G. Eliseev, Yu. M. Popov P. N. Lebedev Physical Institute, the USSR Academy of Sciences, Moscow
Abstract:
Recent advances in the field of semiconductor lasers are treated–injection lasers and lasers excited with fast electrons. Considerable attention is paid to new, four–component heterostructures and ultrathin active layers for injection lasers. Data are given on the fundamental fields of applications of semiconductor lasers.
Citation:
N. G. Basov, P. G. Eliseev, Yu. M. Popov, “Semiconductor lasers”, UFN, 148:1 (1986), 35–53; Phys. Usp., 29:1 (1986), 20–30
Linking options:
https://www.mathnet.ru/eng/ufn8055 https://www.mathnet.ru/eng/ufn/v148/i1/p35
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