A. É. Bochkarev, L. M. Dolginov, A. E. Drakin, P. G. Eliseev, B. N. Sverdlov, “Continuous-wave lasing at room temperature in InGaSbAs/GaAlSbAs injection heterostructures emitting in the spectral range 2.2–2.4 μm”, Kvantovaya Elektronika, 15:11 (1988), 2171–2172 [Sov J Quantum Electron, 18:11 (1988), 1362

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Kvantovaya Elektronika, 1988, Volume 15, Number 11, Pages 2171–2172 (Mi qe12597)

This article is cited in 40 scientific papers (total in 40 papers)

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Continuous-wave lasing at room temperature in InGaSbAs/GaAlSbAs injection heterostructures emitting in the spectral range 2.2–2.4 μm

A. É. Bochkarev, L. M. Dolginov, A. E. Drakin, P. G. Eliseev, B. N. Sverdlov

Full-text PDF (225 kB) Citations (40)

Abstract: Room-temperature cw lasing was achieved in InGaSbAs/GaAlSbAs heterostructure injection lasers emitting in the range 2.2–2.4 μm. A stripe geometry with a ridge waveguide was used. The threshold currents in the cw regime were 80–150 mA at T = 300 K.

Received: 06.06.1988

English version:
Soviet Journal of Quantum Electronics, 1988, Volume 18, Issue 11, Pages 1362–1363
DOI: https://doi.org/10.1070/QE1988v018n11ABEH012597

Bibliographic databases:

Document Type: Article

UDC: 621.373.826.038.825.4

PACS: 42.55.Px, 42.60.By, 42.60.Pk, 42.60.Jf, 42.81.Qb

Language: Russian

Citation: A. É. Bochkarev, L. M. Dolginov, A. E. Drakin, P. G. Eliseev, B. N. Sverdlov, “Continuous-wave lasing at room temperature in InGaSbAs/GaAlSbAs injection heterostructures emitting in the spectral range 2.2–2.4 μm”, Kvantovaya Elektronika, 15:11 (1988), 2171–2172 [Sov J Quantum Electron, 18:11 (1988), 1362–1363]

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https://www.mathnet.ru/eng/qe12597

https://www.mathnet.ru/eng/qe/v15/i11/p2171

This publication is cited in the following 40 articles:

Citing articles in Google Scholar: Russian citations, English citations
Related articles in Google Scholar: Russian articles, English articles

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