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This article is cited in 4 scientific papers (total in 4 papers)
Fiber and integrated optics
Directional pattern and other output properties of a quantum-well injection laser for the 780-nm spectral region
E. I. Davydova, A. E. Drakin, P. G. Eliseev, G. T. Pak, V. V. Popovichev, M. B. Uspenskiy, S. E. Khlopotin, V. A. Shishkin
Abstract:
An optical model is constructed for a GaAlAs/GaAs stripe-geometry laser heterostructure with a ridge-waveguide configuration in the p-type emitter layer. This waveguide configuration provides lateral optical confinement. The directional characteristics of the output are found as a function of the parameters of the structure. The quantum-well active layer is in a three-layer waveguide (in a separate-confinement structure). Laser structures were fabricated experimentally by MOCVD epitaxy followed by ion-chemical etching and vacuum deposition of zinc selenide on the mesa stripes. Low-threshold lasers with a cw, single-frequency power up to 40 μW were obtained. In single-spatial-mode operation, a power up to 80 μW was achieved at a wavelength of 780 nm. Windows of ZnSe were grown on the laser facets to improve the optical strength.
Received: 17.03.1992
Citation:
E. I. Davydova, A. E. Drakin, P. G. Eliseev, G. T. Pak, V. V. Popovichev, M. B. Uspenskiy, S. E. Khlopotin, V. A. Shishkin, “Directional pattern and other output properties of a quantum-well injection laser for the 780-nm spectral region”, Kvantovaya Elektronika, 19:10 (1992), 1024–1031 [Sov J Quantum Electron, 22:10 (1992), 954–960]
Linking options:
https://www.mathnet.ru/eng/qe3640 https://www.mathnet.ru/eng/qe/v19/i10/p1024
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