Kvantovaya Elektronika
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive
Impact factor
Submit a manuscript

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS



Kvantovaya Elektronika:
Year:
Volume:
Issue:
Page:
Find






Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register


Kvantovaya Elektronika, 1980, Volume 7, Number 1, Pages 91–96 (Mi qe9853)  

This article is cited in 9 scientific papers (total in 9 papers)

Properties of AIGaAsSb–GaSb heterojunction injection lasers in the 1.4–1.8 $\mu m$ wavelength range

Ya. A. Aarik, L. M. Dolginov, A. E. Drakin, L. V. Druzhinina, P. G. Eliseev, P. A. Lyuk, B. N. Sverdlov, V. A. Skripkin, L. V. Friedentkhal'

P. N. Lebedev Physical Institute, the USSR Academy of Sciences, Moscow
Abstract: The characteristics of heterostructures and the main radiative properties of infrared (1.4–1.8 $\mu m$) heterojunction lasers using quaternary solid solutions of AlGaAsSb, grown by liquid-phase epitaxy of GaSb substrates, are presented. A threshold current density of 2-4 kA/cm${}^2$ was obtained in heterojunction injection lasers at 300 K and estimates were made of the waveguide effect and the optimal thickness of the active layer. It was found that the relative discontinuity of the refractive index at the interfaces of the active layer was approximately $5\%$ for a $25\%$ reduction in the Al concentration from the wide to narrow-gap layers of the heterostnicture. Continuous-wave laser action at 77K was obtained in the 1.40–1.57 $\mu m$ wavelength range.
Received: 02.05.1979
English version:
Soviet Journal of Quantum Electronics, 1980, Volume 10, Issue 1, Pages 50–53
DOI: https://doi.org/10.1070/QE1980v010n01ABEH009853
Bibliographic databases:
UDC: 621.378.325
PACS: 42.55.Px
Language: Russian
Citation: Ya. A. Aarik, L. M. Dolginov, A. E. Drakin, L. V. Druzhinina, P. G. Eliseev, P. A. Lyuk, B. N. Sverdlov, V. A. Skripkin, L. V. Friedentkhal', “Properties of AIGaAsSb–GaSb heterojunction injection lasers in the 1.4–1.8 $\mu m$ wavelength range”, Kvantovaya Elektronika, 7:1 (1980), 91–96 [Sov J Quantum Electron, 10:1 (1980), 50–53]
Citation in format AMSBIB
\Bibitem{AarDolDra80}
\by Ya.~A.~Aarik, L.~M.~Dolginov, A.~E.~Drakin, L.~V.~Druzhinina, P.~G.~Eliseev, P.~A.~Lyuk, B.~N.~Sverdlov, V.~A.~Skripkin, L.~V.~Friedentkhal'
\paper Properties of AIGaAsSb--GaSb heterojunction injection lasers in the 1.4--1.8 $\mu m$ wavelength range
\jour Kvantovaya Elektronika
\yr 1980
\vol 7
\issue 1
\pages 91--96
\mathnet{http://mi.mathnet.ru/qe9853}
\transl
\jour Sov J Quantum Electron
\yr 1980
\vol 10
\issue 1
\pages 50--53
\crossref{https://doi.org/10.1070/QE1980v010n01ABEH009853}
\isi{https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=Publons&SrcAuth=Publons_CEL&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=A1980JE08000010}
Linking options:
  • https://www.mathnet.ru/eng/qe9853
  • https://www.mathnet.ru/eng/qe/v7/i1/p91
  • This publication is cited in the following 9 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Квантовая электроника Quantum Electronics
    Statistics & downloads:
    Abstract page:125
    Full-text PDF :68
     
      Contact us:
     Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2024