Characteristics of a channel injection heterojunction laser

A description is given of a laser with a transverse p–n junction, in which the active region is a p–n GaAs (0.45 μ) homojunction enclosed between epitaxial Ga_1-xAl_xAs (x≈0.35) films. This structure is formed on a semiinsulating GaAs substrate by liquid epitaxy. The threshold current is found to be 30 mA at room temperature and the differential quantum efficiency is 65%. Single-mode stimulated emission is reported for a wide range of injection currents at 300 K. The results of studies of radiative and dynamic properties of such lasers are reported.