P. G. Eliseev, S. V. Gastev, A. Koizumi, Y. Fujiwara, Y. Takeda, “Stimulated emission from GaAs:Er, O at 1538 nm”, Kvantovaya Elektronika, 31:11 (2001), 962–964 [Quantum Electron., 31:11 (2001), 962

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Kvantovaya Elektronika, 2001, Volume 31, Number 11, Pages 962–964 (Mi qe2083)

This article is cited in 3 scientific papers (total in 3 papers)

Lasers and laser media

Stimulated emission from GaAs:Er, O at 1538 nm

P. G. Eliseev^a, S. V. Gastev^b, A. Koizumi^c, Y. Fujiwara^c, Y. Takeda^c

^a P. N. Lebedev Physical Institute, Russian Academy of Sciences, Moscow
^b Ioffe Institute, St. Petersburg
^c Nagoya University, Japan

Full-text PDF (150 kB) Citations (3)

Abstract: Spontaneous emission and optical gain are studied in MOCVD-grown epitaxial layers of GaAs co-doped with erbium and oxygen. Optimal growth conditions are used to obtain the high erbium concentrations up to 8 × 10¹⁸ cm^-3. The measurements by the Shaklee – Leheny method revealed the optical gain ~45 cm^-1 at rather low pump intensity ~0.1 kW cm^-2 77 K.

Received: 29.08.2001

English version:
Quantum Electronics, 2001, Volume 31, Issue 11, Pages 962–964
DOI: https://doi.org/10.1070/QE2001v031n11ABEH002083

Bibliographic databases:

Document Type: Article

PACS: 42.55.Px, 42.60.Lh

Language: Russian

Citation: P. G. Eliseev, S. V. Gastev, A. Koizumi, Y. Fujiwara, Y. Takeda, “Stimulated emission from GaAs:Er, O at 1538 nm”, Kvantovaya Elektronika, 31:11 (2001), 962–964 [Quantum Electron., 31:11 (2001), 962–964]

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https://www.mathnet.ru/eng/qe2083

https://www.mathnet.ru/eng/qe/v31/i11/p962

This publication is cited in the following 3 articles:

Citing articles in Google Scholar: Russian citations, English citations
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