A. É. Bochkarev, L. M. Dolginov, A. E. Drakin, L. V. Druzhinina, P. G. Eliseev, B. N. Sverdlov, V. A. Skripkin, “Injection InGaSbAs laser emitting at 2.4μ (300K)”, Kvantovaya Elektronika, 13:10 (1986), 2119–2120 [Sov J Quantum Electron, 16:10 (1986), 1397]

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Kvantovaya Elektronika, 1986, Volume 13, Number 10, Pages 2119–2120 (Mi qe7580)

This article is cited in 2 scientific papers (total in 2 papers)

Brief Communications

Injection InGaSbAs laser emitting at 2.4μ (300K)

A. É. Bochkarev, L. M. Dolginov, A. E. Drakin, L. V. Druzhinina, P. G. Eliseev, B. N. Sverdlov, V. A. Skripkin

Full-text PDF (456 kB) Citations (2)

Abstract: Laser heterostructures were formed from quaternary InGaSbAs (active layer) and GaAlSbAs (emitter layer) solid solutions. Lasing was observed at the wavelength of 2.4μ and the threshold current density was 7.6kA/cm² for a four-sided cleaved resonator at room temperature. Continuous-wave lasing was achieved at the wavelength of 2.1μ when the heterostructure was cooled with liquid nitrogen.

Received: 12.05.1986

English version:
Soviet Journal of Quantum Electronics, 1986, Volume 16, Issue 10, Pages 1397
DOI: https://doi.org/10.1070/QE1986v016n10ABEH007580

Bibliographic databases:

Document Type: Article

UDC: 621.373.826.038.825.4

PACS: 42.55.Px, 42.60.By, 42.60.Da, 42.60.Pk, 42.70.Hj, 42.70.Nq

Language: Russian

Citation: A. É. Bochkarev, L. M. Dolginov, A. E. Drakin, L. V. Druzhinina, P. G. Eliseev, B. N. Sverdlov, V. A. Skripkin, “Injection InGaSbAs laser emitting at 2.4μ (300K)”, Kvantovaya Elektronika, 13:10 (1986), 2119–2120 [Sov J Quantum Electron, 16:10 (1986), 1397]

Linking options:

https://www.mathnet.ru/eng/qe7580

https://www.mathnet.ru/eng/qe/v13/i10/p2119

This publication is cited in the following 2 articles:

Citing articles in Google Scholar: Russian citations, English citations
Related articles in Google Scholar: Russian articles, English articles

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