Abstract:
Laser heterostructures were formed from quaternary InGaSbAs (active layer) and GaAlSbAs (emitter layer) solid solutions. Lasing was observed at the wavelength of 2.4μ and the threshold current density was 7.6kA/cm2 for a four-sided cleaved resonator at room temperature. Continuous-wave lasing was achieved at the wavelength of 2.1μ when the heterostructure was cooled with liquid nitrogen.
Citation:
A. É. Bochkarev, L. M. Dolginov, A. E. Drakin, L. V. Druzhinina, P. G. Eliseev, B. N. Sverdlov, V. A. Skripkin, “Injection InGaSbAs laser emitting at 2.4μ (300K)”, Kvantovaya Elektronika, 13:10 (1986), 2119–2120 [Sov J Quantum Electron, 16:10 (1986), 1397]
Linking options:
https://www.mathnet.ru/eng/qe7580
https://www.mathnet.ru/eng/qe/v13/i10/p2119
This publication is cited in the following 2 articles:
M P Mikhailova, A N Titkov, Semicond. Sci. Technol., 9:7 (1994), 1279
M.B.Z. Morosini, J.L. Herrera-Perez, M.S.S. Loural, A.A.G. Von Zuben, A.C.F. da Silveira, N.B. Patel, IEEE J. Quantum Electron., 29:6 (1993), 2103