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This article is cited in 1 scientific paper (total in 1 paper)
Brief Communications
Three-layer waveguide InGaAsP/lnP injection lasers
M. G. Vasil'ev, L. M. Dolginov, A. E. Drakin, A. V. Ivanov, P. G. Eliseev, V. P. Konyaev, B. N. Sverdlov, V. A. Skripkin, V. I. Shveĭkin, E. G. Shevchenko, A. A. Shelyakin, G. V. Shepekina
Abstract:
Injection lasers with a three-layer waveguide emitting at the wavelength of about 1.3 μ were made and investigated. The liquid phase epitaxy method was used to form heterostructures on n- and p-type InP substrates and these heterostructures had lower threshold currents than conventional double-sided heterojunction lasers. A heterostructure with a three-layer waveguide had a thin active region (0.05–0.2 μ) consisting of a quaternary solid solution with adjoining layers of a transparent solid solution of intermediate composition which, together with the active layer, formed a waveguide for the laser radiation traveling in the medium with the wider band gap (InP). In the pulsed regime the minimum threshold current density was 930 A/cm2 at room temperature.
Received: 01.09.1983
Citation:
M. G. Vasil'ev, L. M. Dolginov, A. E. Drakin, A. V. Ivanov, P. G. Eliseev, V. P. Konyaev, B. N. Sverdlov, V. A. Skripkin, V. I. Shveĭkin, E. G. Shevchenko, A. A. Shelyakin, G. V. Shepekina, “Three-layer waveguide InGaAsP/lnP injection lasers”, Kvantovaya Elektronika, 11:3 (1984), 631–633 [Sov J Quantum Electron, 14:3 (1984), 431–432]
Linking options:
https://www.mathnet.ru/eng/qe4941 https://www.mathnet.ru/eng/qe/v11/i3/p631
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