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Kvantovaya Elektronika, 1974, Volume 1, Number 10, Pages 2294–2295 (Mi qe11746)  

This article is cited in 66 scientific papers (total in 66 papers)

Brief Communications

Heterojunction lasers made of GaxIn1–xAsyP1–y and AlxGa1–xSbyAs1–y solid solutions

A. P. Bogatov, L. M. Dolginov, L. V. Druzhinina, P. G. Eliseev, B. N. Sverdlov, E. G. Shevchenko
Abstract: Double-sided heterostructures were prepared from four-component solid solutions GaxIn1–xAsyP1–y(λ=1.02 μ) and AlxGa1–xSbyAs1–y(λ=0.945 μ). In the former system the problem of compatability of the lattices was solved by adding Ga and As to InP in amounts which ensured that the lattice period was the same (because of the opposite influence of these impurities). Indium phosphide was used as the wide-gap layer. The resultant laser heterostructure was the first system not based on the mutual replacement of Al and Ga, in contrast to earlier heterolasers and to the second investigated system (AlxGa1–xSbyAs1–y).
Received: 27.05.1974
English version:
Soviet Journal of Quantum Electronics, 1975, Volume 4, Issue 10, Pages 1281
DOI: https://doi.org/10.1070/QE1975v004n10ABEH011746
Document Type: Article
UDC: 621.382.3
PACS: 42.55.Px, 42.60.By, 42.70.Hj, 42.70.Nq, 42.60.Jf
Language: Russian


Citation: A. P. Bogatov, L. M. Dolginov, L. V. Druzhinina, P. G. Eliseev, B. N. Sverdlov, E. G. Shevchenko, “Heterojunction lasers made of GaxIn1–xAsyP1–y and AlxGa1–xSbyAs1–y solid solutions”, Kvantovaya Elektronika, 1:10 (1974), 2294–2295 [Sov J Quantum Electron, 4:10 (1975), 1281]
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  • This publication is cited in the following 66 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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