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Kvantovaya Elektronika, 1973, Number 5(17), Pages 116–117 (Mi qe5541)  

This article is cited in 1 scientific paper (total in 1 paper)

Brief Communications

Internal Q switching in single-sided heterojunction injection lasers

P. G. Eliseev, L. P. Ivanov, A. S. Logginov, E. P. Nikitin
Full-text PDF (416 kB) Citations (1)
Abstract: An experimental study was made of the internal Q switching in AlxGa1–x–GaAs single-sided heterojunction injection lasers. A study was made of the dynamics of the emission spectrum on transition from the spontaneous emission to the Q-switching conditions when a diode emitted single light pulses of ~120 psec duration at a time corresponding to the trailing edge of the pumping current pulse.
Received: 05.09.1972
English version:
Soviet Journal of Quantum Electronics, 1974, Volume 3, Issue 5, Pages 433–434
DOI: https://doi.org/10.1070/QE1974v003n05ABEH005541
Document Type: Article
UDC: 621.378.3
PACS: 42.55.Px, 42.60.Gd, 42.60.Jf, 42.60.Da
Language: Russian


Citation: P. G. Eliseev, L. P. Ivanov, A. S. Logginov, E. P. Nikitin, “Internal Q switching in single-sided heterojunction injection lasers”, Kvantovaya Elektronika, 5 (1973), 116–117 [Sov J Quantum Electron, 3:5 (1974), 433–434]
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  • https://www.mathnet.ru/eng/qe/y1973/i5/p116
  • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    Квантовая электроника Quantum Electronics
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