Mechanism of the displacement of atoms in laser crystals as a result of nonradiative recombination

An analysis is made of the mechanism of nonradiative resonant electron capture accompanied by the transfer of energy to a lattice atom. This mechanism may be responsible for the motion and formation of defects in semiconductors as a result of injection of excess carriers. The process of dissociative capture of an electron by a molecule is used as the model of the defect-forming capture process. An approximate expression is obtained for the probability of the displacement of atoms in laser crystals of the gallium arsenide type.