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Publications in Math-Net.Ru |
Citations |
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2024 |
1. |
A. F. Zinovieva, V. A. Zinovyev, A. V. Katsyuba, V. A. Volodin, V. I. Muratov, A. V. Dvurechenskii, “Growth of silicene by molecular beam epitaxy on CaF$_2$/Si(111) substrates modified by electron irradiation”, Pis'ma v Zh. Èksper. Teoret. Fiz., 119:9 (2024), 692–696 ; JETP Letters, 119:9 (2024), 703–707 |
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2023 |
2. |
E. A. Baranov, V. A. Nepomnyashchikh, V. O. Konstantinov, V. G. Shchukin, I. E. Merkulova, A. O. Zamchiy, N. A. Lunev, V. A. Volodin, A. A. Shapovalova, “Influence of current density on the structure of thin films of amorphous silicon suboxide during electron beam annealing”, Prikl. Mekh. Tekh. Fiz., 64:5 (2023), 52–58 ; J. Appl. Mech. Tech. Phys., 64:5 (2024), 778–783 |
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2022 |
3. |
V. A. Zinovyev, A. F. Zinovieva, V. A. Volodin, A. K. Gutakovskii, A. S. Deryabin, A. Yu. Krupin, L. V. Kulik, V. D. Zhivulko, A. V. Mudryi, A. V. Dvurechenskii, “Synthesis of epitaxial structures with two-dimensional si layers embedded in a CaF$_2$ dielectric matrix”, Pis'ma v Zh. Èksper. Teoret. Fiz., 116:9 (2022), 608–613 ; JETP Letters, 116:9 (2022), 628–633 |
1
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4. |
E. A. Baranov, A. O. Zamchiy, N. A. Lunev, I. E. Merkulova, V. A. Volodin, M. R. Sharafutdinov, A. A. Shapovalova, “High-temperature annealing of thin silicon suboxide films produced by the method of gas-jet chemical deposition with activation by electron-beam plasma”, Prikl. Mekh. Tekh. Fiz., 63:5 (2022), 33–41 ; J. Appl. Mech. Tech. Phys., 63:5 (2022), 757–764 |
1
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2021 |
5. |
V. N. Kruchinin, V. A. Volodin, S. V. Rykhlitskii, V. A. Gritsenko, I. P. Posvirin, Xiaoping Shi, M. R. Baklanov, “Atomic structure and optical properties of plasma enhanced chemical vapor deposited SiCOH Low-k dielectric film”, Optics and Spectroscopy, 129:5 (2021), 618 ; Optics and Spectroscopy, 129:6 (2021), 645–651 |
4
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6. |
V. A. Zinov'ev, A. V. Katsyuba, V. A. Volodin, A. F. Zinov'eva, S. G. Cherkova, Zh. V. Smagina, A. V. Dvurechenskii, A. Yu. Krupin, O. M. Borodavchenko, V. D. Zhivulko, A. V. Mudryi, “Atomic structure and optical properties of CaSi$_2$ layers grown on CaF$_2$/Si substrates”, Fizika i Tekhnika Poluprovodnikov, 55:9 (2021), 725–728 ; Semiconductors, 55:10 (2021), 808–811 |
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7. |
Zhang Fan, S. G. Cherkova, V. A. Volodin, “Formation of germanium nanocrystals in GeO[SiO$_{2}$] and GeO[SiO] films”, Fizika i Tekhnika Poluprovodnikov, 55:6 (2021), 507–512 |
8. |
N. A. Lunev, A. O. Zamchiy, E. A. Baranov, I. E. Merkulova, V. O. Konstantinov, I. V. Korolkov, E. A. Maximovskiy, V. A. Volodin, “Gold-induced crystallization of thin films of amorphous silicon suboxide”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:14 (2021), 35–38 ; Tech. Phys. Lett., 47:10 (2021), 726–729 |
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9. |
G. N. Kamaev, V. A. Volodin, G. K. Krivyakin, “Vertical ordering of amorphous Ge nanoclusters in multilayer $a$-Ge/$a$-Si:H heterostructures”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:12 (2021), 13–16 ; Tech. Phys. Lett., 47:8 (2021), 609–612 |
10. |
E. A. Baranov, V. O. Konstantinov, V. G. Shchukin, A. O. Zamchiy, I. E. Merkulova, N. A. Lunev, V. A. Volodin, “Electron-beam crystallization of thin films of amorphous silicon suboxide”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:6 (2021), 26–28 ; Tech. Phys. Lett., 47:3 (2021), 263–265 |
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2020 |
11. |
M. P. Gambaryan, G. K. Krivyakin, S. G. Cherkova, M. Stoffel, H. Rinnert, M. Vergnat, V. A. Volodin, “Quantum size effects in germanium nanocrystals and amorphous nanoclusters in GeSi$_x$O$_y$ films”, Fizika Tverdogo Tela, 62:3 (2020), 434–441 ; Phys. Solid State, 62:3 (2020), 492–498 |
16
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12. |
K. N. Astankova, V. A. Volodin, I. A. Azarov, “Structure of germanium monoxide thin films”, Fizika i Tekhnika Poluprovodnikov, 54:12 (2020), 1296–1301 ; Semiconductors, 54:12 (2020), 1555–1560 |
14
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13. |
G. K. Krivyakin, V. A. Volodin, G. N. Kamaev, A. A. Popov, “Effect of interfaces and thickness on the crystallization kinetics of amorphous germanium films”, Fizika i Tekhnika Poluprovodnikov, 54:7 (2020), 643–647 ; Semiconductors, 54:7 (2020), 754–758 |
4
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14. |
Zhang Fan, S. A. Kochubei, M. Stoffel, H. Rinnert, M. Vergnat, V. A. Volodin, “On the formation of amorphous Ge nanoclusters and Ge nanocrystals in GeSi$_{x}$O$_{y}$ films on quartz substrates by furnace and pulsed laser annealing”, Fizika i Tekhnika Poluprovodnikov, 54:3 (2020), 251–258 ; Semiconductors, 54:3 (2020), 322–329 |
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15. |
A. O. Zamchiy, E. A. Baranov, I. E. Merkulova, N. A. Lunev, V. A. Volodin, E. A. Maximovskiy, “Indium-induced crystallization of thin films of amorphous silicon suboxide”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:12 (2020), 14–17 ; Tech. Phys. Lett., 46:6 (2020), 583–586 |
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16. |
A. V. Kolchin, D. V. Shuleiko, A. V. Pavlikov, S. V. Zabotnov, L. A. Golovan, D. E. Presnov, V. A. Volodin, G. K. Krivyakin, A. A. Popov, P. K. Kashkarov, “Femtosecond laser annealing of multilayer thin-film structures based on amorphous germanium and silicon”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:11 (2020), 43–46 ; Tech. Phys. Lett., 46:6 (2020), 560–563 |
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2019 |
17. |
T. V. Perevalov, V. A. Volodin, Yu. N. Novikov, G. N. Kamaev, V. A. Gritsenko, I. P. Prosvirin, “Nanoscale potential fluctuations in SiO$_{x}$ synthesized by the plasma enhanced chemical vapor deposition”, Fizika Tverdogo Tela, 61:12 (2019), 2528–2535 ; Phys. Solid State, 61:12 (2019), 2560–2568 |
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18. |
V. A. Volodin, V. A. Timofeev, A. I. Nikiforov, M. Stoffel, H. Rinnert, M. Vergnat, “Vibrational and light-emitting properties of Si/Si$_{1-x}$Sn$_x$ heterostructures”, Pis'ma v Zh. Èksper. Teoret. Fiz., 109:6 (2019), 371–374 ; JETP Letters, 109:6 (2019), 368–371 |
1
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19. |
V. N. Kruchinin, M. V. Kruchinina, Ya. I. Prudnikova, E. V. Spesivtsev, S. V. Rykhlitskii, V. A. Volodin, S. V. Shekhovtsov, S. E. Pel'tek, “The use of spectral ellipsometry and Raman spectroscopy in the screening diagnosis of colorectal cancer”, Optics and Spectroscopy, 127:1 (2019), 170–176 ; Optics and Spectroscopy, 127:1 (2019), 170–176 |
4
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20. |
S. G. Cherkova, V. A. Skuratov, V. A. Volodin, “Luminescent properties of float zone silicon irradiated with swift heavy ions”, Fizika i Tekhnika Poluprovodnikov, 53:11 (2019), 1467–1470 ; Semiconductors, 53:11 (2019), 1427–1430 |
4
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21. |
I. E. Tyschenko, V. A. Volodin, V. P. Popov, “Raman scattering in InSb spherical nanocrystals ion-synthesized in silicon-oxide films”, Fizika i Tekhnika Poluprovodnikov, 53:4 (2019), 502–507 ; Semiconductors, 53:4 (2019), 493–498 |
9
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22. |
V. A. Volodin, G. K. Krivyakin, G. D. Ivlev, S. L. Prokopyev, S. V. Gusakova, A. A. Popov, “Crystallization of amorphous germanium films and multilayer $a$-Ge/$a$-Si structures upon exposure to nanosecond laser radiation”, Fizika i Tekhnika Poluprovodnikov, 53:3 (2019), 423–429 ; Semiconductors, 53:3 (2019), 400–405 |
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2018 |
23. |
V. A. Gritsenko, T. V. Perevalov, V. A. Volodin, V. N. Kruchinin, A. K. Gerasimova, I. P. Prosvirin, “Atomic and electronic structures of metal-rich noncentrosymmetric ZrO$_x$”, Pis'ma v Zh. Èksper. Teoret. Fiz., 108:4 (2018), 230–235 ; JETP Letters, 108:4 (2018), 226–230 |
2
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24. |
V. N. Kruchinin, V. A. Volodin, T. V. Perevalov, A. K. Gerasimova, V. Sh. Aliev, V. A. Gritsenko, “Optical properties of nonstoichiometric tantalum oxide TaO$_{x}$ ($x<$ 5/2) according to spectral-ellipsometry and Raman-scattering data”, Optics and Spectroscopy, 124:6 (2018), 777–782 ; Optics and Spectroscopy, 124:6 (2018), 808–813 |
17
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25. |
V. A. Volodin, Zhang Rui, G. K. Krivyakin, A. Kh. Antonenko, M. Stoffel, H. Rinnert, M. Vergnat, “On the formation of IR-light-emitting Ge nanocrystals in Ge:SiO$_{2}$ films”, Fizika i Tekhnika Poluprovodnikov, 52:9 (2018), 1056–1065 ; Semiconductors, 52:9 (2018), 1178–1187 |
4
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26. |
V. A. Volodin, V. A. Sachkov, M. P. Sinyukov, “Forbidden resonant Raman scattering in GaAs/AlAs superlattices: experiment and calculations”, Fizika i Tekhnika Poluprovodnikov, 52:6 (2018), 569–574 ; Semiconductors, 52:6 (2018), 717–722 |
1
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27. |
E. B. Gorokhov, K. N. Astankova, I. A. Azarov, V. A. Volodin, A. V. Latyshev, “New method of porous Ge layer fabrication: structure and optical properties”, Fizika i Tekhnika Poluprovodnikov, 52:5 (2018), 517 ; Semiconductors, 52:5 (2018), 628–631 |
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28. |
I. E. Tyschenko, G. K. Krivyakin, V. A. Volodin, “Ion-beam synthesis of the crystalline Ge phase in SiO$_{x}$N$_{y}$ films upon annealing under high pressure”, Fizika i Tekhnika Poluprovodnikov, 52:2 (2018), 280–284 ; Semiconductors, 52:2 (2018), 268–272 |
29. |
V. A. Volodin, V. A. Gritsenko, A. Chin, “Local oscillations of silicon–silicon bonds in silicon nitride”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:10 (2018), 37–45 ; Tech. Phys. Lett., 44:5 (2018), 424–427 |
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2017 |
30. |
V. A. Volodin, V. A. Timofeev, A. R. Tuktamyshev, A. I. Nikiforov, “Splitting of frequencies of optical phonons in tensile-strained germanium layers”, Pis'ma v Zh. Èksper. Teoret. Fiz., 105:5 (2017), 305–310 ; JETP Letters, 105:5 (2017), 327–331 |
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31. |
G. K. Krivyakin, V. A. Volodin, A. A. Shklyaev, V. Mortet, J. More-Chevalier, P. Ashcheulov, Z. Remes, T. H. Stuchliková, J. Stuchlik, “Formation and study of $p$–$i$–$n$ structures based on two-phase hydrogenated silicon with a germanium layer in the $i$-type region”, Fizika i Tekhnika Poluprovodnikov, 51:10 (2017), 1420–1425 ; Semiconductors, 51:10 (2017), 1370–1376 |
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32. |
I. E. Tyschenko, A. G. Cherkov, V. A. Volodin, M. Voelskow, “Specific features of the ion-beam synthesis of Ge nanocrystals in SiO$_{2}$ thin films”, Fizika i Tekhnika Poluprovodnikov, 51:9 (2017), 1289–1294 ; Semiconductors, 51:9 (2017), 1240–1246 |
1
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2016 |
33. |
G. K. Krivyakin, V. A. Volodin, S. A. Kochubei, G. N. Kamaev, A. Purkrt, Z. Remes, R. Fajgar, T. H. Stuchliková, J. Stuchlik, “Optical properties of $p$–$i$–$n$ structures based on amorphous hydrogenated silicon with silicon nanocrystals formed via nanosecond laser annealing”, Fizika i Tekhnika Poluprovodnikov, 50:7 (2016), 952–957 ; Semiconductors, 50:7 (2016), 935–940 |
10
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2015 |
34. |
V. A. Volodin, L. V. Sokolov, “Redshift of the absorption edge in tensile-strained germanium layers”, Pis'ma v Zh. Èksper. Teoret. Fiz., 101:6 (2015), 455–458 ; JETP Letters, 101:6 (2015), 419–421 |
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2014 |
35. |
V. A. Volodin, M. P. Sinyukov, “Anisotropy of long-wavelength optical phonons in GaAs/AlAs superlattice”, Pis'ma v Zh. Èksper. Teoret. Fiz., 99:7 (2014), 463–466 ; JETP Letters, 99:7 (2014), 396–399 |
10
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2012 |
36. |
D. V. Marin, V. A. Volodin, H. Rinnert, M. Vergnat, “Anomalous temperature dependence of photoluminescence in
GeO$_{x}$”, Pis'ma v Zh. Èksper. Teoret. Fiz., 95:8 (2012), 472–476 ; JETP Letters, 95:8 (2012), 424–428 |
9
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37. |
V. A. Volodin, A. S. Kozhukhov, A. V. Latyshev, D. V. Shcheglov, “Folding of acoustic-phonon modes in GaAs/AlAs (311)A superlattices in the direction perpendicular to nanofacets”, Pis'ma v Zh. Èksper. Teoret. Fiz., 95:2 (2012), 76–79 ; JETP Letters, 95:2 (2012), 70–73 |
4
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2011 |
38. |
V. A. Volodin, A. S. Kacko, A. G. Cherkov, A. V. Latyshev, J. Koch, B. N. Chichkov, “Femtosecond pulse crystallization of thin amorphous hydrogenated films on glass substrates using near ultraviolet laser radiation”, Pis'ma v Zh. Èksper. Teoret. Fiz., 93:10 (2011), 665–668 ; JETP Letters, 93:10 (2011), 603–606 |
12
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2009 |
39. |
V. A. Volodin, “Experimental discovery of the anisotropy of phonon-plasmon modes in GaAs/AlAs(100) superlattices”, Pis'ma v Zh. Èksper. Teoret. Fiz., 89:8 (2009), 483–485 ; JETP Letters, 89:8 (2009), 419–421 |
8
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40. |
V. A. Volodin, E. V. Gorokhov, D. V. Marin, H. Rinnert, P. Miska, M. Vergnat, “Quasi-direct optical transitions in Ge nanocrystals embedded in GeO$_2$ matrix”, Pis'ma v Zh. Èksper. Teoret. Fiz., 89:2 (2009), 84–88 ; JETP Letters, 89:2 (2009), 76–79 |
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2007 |
41. |
V. A. Volodin, M. D. Efremov, G. A. Kachurin, A. G. Cherkov, M. Deutschmann, N. Baersch, “Phase transitions in $a$-Si:H films on a glass irradiated by high-power femtosecond pulses: Manifestation of nonlinear and nonthermal effects”, Pis'ma v Zh. Èksper. Teoret. Fiz., 86:2 (2007), 128–131 ; JETP Letters, 86:2 (2007), 119–122 |
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2005 |
42. |
V. A. Volodin, M. D. Efremov, “Electron-phonon interaction in boron-doped silicon nanocrystals: Effect of Fano interference on the Raman spectrum”, Pis'ma v Zh. Èksper. Teoret. Fiz., 82:2 (2005), 91–94 ; JETP Letters, 82:2 (2005), 86–88 |
12
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43. |
D. A. Orekhov, V. A. Volodin, M. D. Efremov, A. I. Nikiforov, V. V. Ul'yanov, O. P. Pchelyakov, “Phonon localization in Ge nanoislands and its manifestation in Raman spectra”, Pis'ma v Zh. Èksper. Teoret. Fiz., 81:7 (2005), 415–418 ; JETP Letters, 81:7 (2005), 331–334 |
8
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2004 |
44. |
M. D. Efremov, V. A. Volodin, D. V. Marin, S. A. Arzhannikova, S. V. Goryainov, A. I. Korchagin, V. V. Cherepkov, A. V. Lavrukhin, S. N. Fadeev, R. A. Salimov, S. P. Bardakhanov, “Visible photoluminescence from silicon nanopowders produced by silicon evaporation in a high-power electron beam”, Pis'ma v Zh. Èksper. Teoret. Fiz., 80:8 (2004), 619–622 ; JETP Letters, 80:8 (2004), 544–547 |
22
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45. |
A. V. Dvurechenskii, Zh. V. Smagina, V. A. Zinov'ev, V. A. Armbrister, V. A. Volodin, M. D. Efremov, “Elemental composition of nanoclusters formed by pulsed irradiation with low-energy ions during Ge/Si epitaxy”, Pis'ma v Zh. Èksper. Teoret. Fiz., 79:7 (2004), 411–415 ; JETP Letters, 79:7 (2004), 333–336 |
5
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2003 |
46. |
V. A. Volodin, Y. B. Gorokhov, M. D. Efremov, D. V. Marin, D. A. Orekhov, “Photoluminescence of GeO$_2$ films containing germanium nanocrystals”, Pis'ma v Zh. Èksper. Teoret. Fiz., 77:8 (2003), 485–488 ; JETP Letters, 77:8 (2003), 411–414 |
17
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1991 |
47. |
V. A. Volodin, A. M. Khapaev, “An exact solution of the relativistic Klein–Gordon wave equation”, Zh. Vychisl. Mat. Mat. Fiz., 31:6 (1991), 877–886 ; U.S.S.R. Comput. Math. Math. Phys., 31:6 (1991), 69–76 |
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