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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2005, Volume 81, Issue 7, Pages 415–418 (Mi jetpl1714)  
This article is cited in 8 scientific papers (total in 8 papers)

CONDENSED MATTER

Phonon localization in Ge nanoislands and its manifestation in Raman spectra

D. A. Orekhov, V. A. Volodin, M. D. Efremov, A. I. Nikiforov, V. V. Ul'yanov, O. P. Pchelyakov

A. V. Rzhanov Institute of Semiconductor Physics of SB RAS, Novosibirsk
Full-text PDF (408 kB) Citations (8)
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Abstract: Multilayer structures with germanium nanoislands that are formed on the silicon (111) surface upon submonolayer deposition by molecular-beam epitaxy have been investigated using Raman spectroscopy. To interpret the experimental Raman spectra, numerical calculations of the spectra have been performed for nanoislands containing from several to several hundred germanium atoms. The calculations demonstrate that the in-plane sizes of nanoislands (with sizes less than 2–3 nm) substantially affect the frequencies of phonons localized in these nanoislands. The experimental Raman spectra confirm the occurrence of the quantum size effect.
Received: 21.02.2005
English version:
Journal of Experimental and Theoretical Physics Letters, 2005, Volume 81, Issue 7, Pages 331–334
DOI: https://doi.org/10.1134/1.1944073
Bibliographic databases:
Document Type: Article
PACS: 63.22.+m, 78.30.-j, 81.15.Hi
Language: Russian
Citation: D. A. Orekhov, V. A. Volodin, M. D. Efremov, A. I. Nikiforov, V. V. Ul'yanov, O. P. Pchelyakov, “Phonon localization in Ge nanoislands and its manifestation in Raman spectra”, Pis'ma v Zh. Èksper. Teoret. Fiz., 81:7 (2005), 415–418; JETP Letters, 81:7 (2005), 331–334
Citation in format AMSBIB
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\jour Pis'ma v Zh. \`Eksper. Teoret. Fiz.
\yr 2005
\vol 81
\issue 7
\pages 415--418
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\jour JETP Letters
\yr 2005
\vol 81
\issue 7
\pages 331--334
\crossref{https://doi.org/10.1134/1.1944073}
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    • This publication is cited in the following 8 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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