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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2004, Volume 79, Issue 7, Pages 411–415
(Mi jetpl2268)
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This article is cited in 5 scientific papers (total in 5 papers)
CONDENSED MATTER
Elemental composition of nanoclusters formed by pulsed irradiation with low-energy ions during Ge/Si epitaxy
A. V. Dvurechenskii, Zh. V. Smagina, V. A. Zinov'ev, V. A. Armbrister, V. A. Volodin, M. D. Efremov Institute of Semiconductor Physics of SB RAS, Novosibirsk
Abstract:
Multilayer silicon structures with built-in layers of Ge nanoclusters were studied experimentally by Raman light scattering. The built-in layers were formed by the pulsed action of a low-energy beam of intrinsic ions during molecular-beam epitaxy. It is found that the ion-stimulated nucleation and the subsequent growth make it possible to obtain Ge nanoclusters almost free of Si.
Received: 24.02.2004
Citation:
A. V. Dvurechenskii, Zh. V. Smagina, V. A. Zinov'ev, V. A. Armbrister, V. A. Volodin, M. D. Efremov, “Elemental composition of nanoclusters formed by pulsed irradiation with low-energy ions during Ge/Si epitaxy”, Pis'ma v Zh. Èksper. Teoret. Fiz., 79:7 (2004), 411–415; JETP Letters, 79:7 (2004), 333–336
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https://www.mathnet.ru/eng/jetpl2268 https://www.mathnet.ru/eng/jetpl/v79/i7/p411
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Abstract page: | 197 | Full-text PDF : | 67 | References: | 31 |
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