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Fizika i Tekhnika Poluprovodnikov, 2020, Volume 54, Issue 3, Pages 251–258
DOI: https://doi.org/10.21883/FTP.2020.03.49029.9309
(Mi phts5261)
 

This article is cited in 5 scientific papers (total in 5 papers)

Micro- and nanocrystalline, porous, composite semiconductors

On the formation of amorphous Ge nanoclusters and Ge nanocrystals in GeSi$_{x}$O$_{y}$ films on quartz substrates by furnace and pulsed laser annealing

Zhang Fana, S. A. Kochubeib, M. Stoffelc, H. Rinnertc, M. Vergnatc, V. A. Volodinab

a Novosibirsk State University
b Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
c Université de Lorraine, Institut Jean Lamour UMR CNRS, France
Full-text PDF (918 kB) Citations (5)
Abstract: Nonstoichiometric GeO$_{0.5}$[SiO$_{2}$]$_{0.5}$ and GeO$_{0.5}$[SiO]$_{0.5}$ germanosilicate glassy films are produced by the high-vacuum coevaporation of GeO$_2$ and either SiO or SiO$_2$ powders with deposition onto a cold fused silica substrate. Then the films are subjected to furnace or laser annealing (a XeCl laser, $\lambda$ = 308 nm, pulse duration of 15 ns). The properties of the samples are studied by transmittance and reflectance spectroscopy, Raman spectroscopy, and photoluminescence spectroscopy. As shown by analysis of the Raman spectra, the GeO[SiO] film deposited at a substrate temperature of 100$^{\circ}$C contains amorphous Ge clusters, whereas no signal from Ge–Ge bond vibrations is observed in the Raman spectra of the GeO[SiO$_{2}$] film deposited at the same temperature. The optical absorption edge of the as-deposited GeO[SiO$_{2}$] film corresponds to $\sim$400 nm; at the same time, in the GeO[SiO] film, absorption is observed right up to the near-infrared region, which is apparently due to absorption in Ge clusters. Annealing induces a shift of the absorption edge to longer wavelengths. After annealing of the GeO[SiO$_{2}$] film at 450$^{\circ}$C, amorphous germanium clusters are detected in the film, and after annealing at 550$^{\circ}$C as well as after pulsed laser annealing, germanium nanocrystals are detected. The crystallization of amorphous Ge nanoclusters in the GeO[SiO] film requires annealing at a temperature of 680$^{\circ}$C. In this case, the size of Ge nanoclusters in this film are smaller than that in the GeO[SiO$_{2}$] film. It is not possible to crystallize Ge clusters in the GeO[SiO] film. It seems obvious that the smaller the semiconductor nanoclusters in an insulating matrix, the more difficult it is to crystallize them. In the low-temperature photoluminescence spectra of the annealed films, signals caused by either defects or Ge clusters are detected.
Keywords: germanosilicate glasses, germanium nanoclusters, crystallization, pulsed laser annealing.
Funding agency Grant number
Russian Academy of Sciences - Federal Agency for Scientific Organizations 0306-2019-0019
The study was supported by the government of the Russian Federation in accordance with the government order, Program of Basic Research for the Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, no. 0306-2019-0019.
Received: 11.11.2019
Revised: 15.11.2019
Accepted: 15.11.2019
English version:
Semiconductors, 2020, Volume 54, Issue 3, Pages 322–329
DOI: https://doi.org/10.1134/S1063782620030070
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: Zhang Fan, S. A. Kochubei, M. Stoffel, H. Rinnert, M. Vergnat, V. A. Volodin, “On the formation of amorphous Ge nanoclusters and Ge nanocrystals in GeSi$_{x}$O$_{y}$ films on quartz substrates by furnace and pulsed laser annealing”, Fizika i Tekhnika Poluprovodnikov, 54:3 (2020), 251–258; Semiconductors, 54:3 (2020), 322–329
Citation in format AMSBIB
\Bibitem{FanKocSto20}
\by Zhang~Fan, S.~A.~Kochubei, M.~Stoffel, H.~Rinnert, M.~Vergnat, V.~A.~Volodin
\paper On the formation of amorphous Ge nanoclusters and Ge nanocrystals in GeSi$_{x}$O$_{y}$ films on quartz substrates by furnace and pulsed laser annealing
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2020
\vol 54
\issue 3
\pages 251--258
\mathnet{http://mi.mathnet.ru/phts5261}
\crossref{https://doi.org/10.21883/FTP.2020.03.49029.9309}
\elib{https://elibrary.ru/item.asp?id=42776678}
\transl
\jour Semiconductors
\yr 2020
\vol 54
\issue 3
\pages 322--329
\crossref{https://doi.org/10.1134/S1063782620030070}
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    Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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