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This article is cited in 16 scientific papers (total in 16 papers)
CONDENSED MATTER
Splitting of frequencies of optical phonons in tensile-strained germanium layers
V. A. Volodinab, V. A. Timofeeva, A. R. Tuktamyshevba, A. I. Nikiforova a Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
b Novosibirsk State University, Novosibirsk, Russia
Abstract:
Tensile-strained germanium films in Ge/GeSn/Si/GeSnSi multilayer heterostructures grown by molecularbeam epitaxy on Si(001) substrates are investigated by Raman spectroscopy. Biaxial tensile strains in the films reach 1.5%, which exceeds values previously obtained for this system. Splitting of frequencies of long-wavelength optical phonons is experimentally observed; i.e., the shift of the frequency of the singlet induced by biaxial tensile strains is larger than the shift of the frequency of the doublet in agreement with calculations. The strain-induced shift of Raman scattering peaks from two-phonon scattering in germanium is also detected.
Received: 16.01.2017 Revised: 30.01.2017
Citation:
V. A. Volodin, V. A. Timofeev, A. R. Tuktamyshev, A. I. Nikiforov, “Splitting of frequencies of optical phonons in tensile-strained germanium layers”, Pis'ma v Zh. Èksper. Teoret. Fiz., 105:5 (2017), 305–310; JETP Letters, 105:5 (2017), 327–331
Linking options:
https://www.mathnet.ru/eng/jetpl5212 https://www.mathnet.ru/eng/jetpl/v105/i5/p305
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