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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2017, Volume 105, Issue 5, Pages 305–310
DOI: https://doi.org/10.7868/S0370274X17050101
(Mi jetpl5212)
 

This article is cited in 16 scientific papers (total in 16 papers)

CONDENSED MATTER

Splitting of frequencies of optical phonons in tensile-strained germanium layers

V. A. Volodinab, V. A. Timofeeva, A. R. Tuktamyshevba, A. I. Nikiforova

a Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
b Novosibirsk State University, Novosibirsk, Russia
References:
Abstract: Tensile-strained germanium films in Ge/GeSn/Si/GeSnSi multilayer heterostructures grown by molecularbeam epitaxy on Si(001) substrates are investigated by Raman spectroscopy. Biaxial tensile strains in the films reach 1.5%, which exceeds values previously obtained for this system. Splitting of frequencies of long-wavelength optical phonons is experimentally observed; i.e., the shift of the frequency of the singlet induced by biaxial tensile strains is larger than the shift of the frequency of the doublet in agreement with calculations. The strain-induced shift of Raman scattering peaks from two-phonon scattering in germanium is also detected.
Funding agency Grant number
Russian Foundation for Basic Research 16-32-60005_мол_а_дк
16-32-00039_мол_а
16-29-03292_офи_м
Siberian Branch of Russian Academy of Sciences 0306-2016-0015
Received: 16.01.2017
Revised: 30.01.2017
English version:
Journal of Experimental and Theoretical Physics Letters, 2017, Volume 105, Issue 5, Pages 327–331
DOI: https://doi.org/10.1134/S0021364017050137
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: V. A. Volodin, V. A. Timofeev, A. R. Tuktamyshev, A. I. Nikiforov, “Splitting of frequencies of optical phonons in tensile-strained germanium layers”, Pis'ma v Zh. Èksper. Teoret. Fiz., 105:5 (2017), 305–310; JETP Letters, 105:5 (2017), 327–331
Citation in format AMSBIB
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  • This publication is cited in the following 16 articles:
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