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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2020, Volume 46, Issue 11, Pages 43–46
DOI: https://doi.org/10.21883/PJTF.2020.11.49499.18201 (Mi pjtf5092) 		 
This article is cited in 8 scientific papers (total in 8 papers)

Femtosecond laser annealing of multilayer thin-film structures based on amorphous germanium and silicon

A. V. Kolchina, D. V. Shuleikoa, A. V. Pavlikovab, S. V. Zabotnovab, L. A. Golovana, D. E. Presnovacd, V. A. Volodinef, G. K. Krivyakinef, A. A. Popovg, P. K. Kashkarovab

a Lomonosov Moscow State University
b National Research Centre "Kurchatov Institute", Moscow
c Lomonosov Moscow State University, Skobeltsyn Institute of Nuclear Physics
d Quantum Technology Center of M. V. Lomonosov Moscow State University
e Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
f Novosibirsk State University
g Yaroslavl branch of the Institute of physics and technology, Institution of Russian academy of sciences
Full-text PDF (725 kB) Citations (8)
DOI: https://doi.org/10.21883/PJTF.2020.11.49499.18201
Abstract: Femtosecond laser annealing of thin-film multilayered structures based on amorphous silicon and germanium were studied. The original samples were synthesized via plasma-enhanced deposition on glass substrate. Scanning electron microscopy revealed formation of periodic surface structures in the irradiated films. Raman spectra analysis revealed crystallization of amorphous germanium as a result of femtosecond laser pulses action, as well as fluence-dependent mixture of the germanium and silicon layers at absence of crystallization of the amorphous silicon layers.
Keywords: pulsed laser annealing, thin-film silicon and germanium structures, scanning electron microscopy, Raman scattering.
Funding agency Grant number
Ministry of Education and Science of the Russian Federation 0066-2019-0003
This work was supported by the fundamental research program of the Yaroslavl Branch of the Institute of Physics and Technology, Russian Academy of Sciences, no. 0066-2019-0003.
Received: 09.01.2020
Revised: 16.03.2020
Accepted: 16.03.2020
English version:
Technical Physics Letters, 2020, Volume 46, Issue 6, Pages 560–563
DOI: https://doi.org/10.1134/S1063785020060048
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. V. Kolchin, D. V. Shuleiko, A. V. Pavlikov, S. V. Zabotnov, L. A. Golovan, D. E. Presnov, V. A. Volodin, G. K. Krivyakin, A. A. Popov, P. K. Kashkarov, “Femtosecond laser annealing of multilayer thin-film structures based on amorphous germanium and silicon”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:11 (2020), 43–46; Tech. Phys. Lett., 46:6 (2020), 560–563
Citation in format AMSBIB
\Bibitem{KolShuPav20}
\by A.~V.~Kolchin, D.~V.~Shuleiko, A.~V.~Pavlikov, S.~V.~Zabotnov, L.~A.~Golovan, D.~E.~Presnov, V.~A.~Volodin, G.~K.~Krivyakin, A.~A.~Popov, P.~K.~Kashkarov
\paper Femtosecond laser annealing of multilayer thin-film structures based on amorphous germanium and silicon
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2020
\vol 46
\issue 11
\pages 43--46
\mathnet{http://mi.mathnet.ru/pjtf5092}
\crossref{https://doi.org/10.21883/PJTF.2020.11.49499.18201}
\elib{https://elibrary.ru/item.asp?id=43800720}
\transl
\jour Tech. Phys. Lett.
\yr 2020
\vol 46
\issue 6
\pages 560--563
\crossref{https://doi.org/10.1134/S1063785020060048}
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    Citing articles in Google Scholar: Russian citations, English citations
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