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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2009, Volume 89, Issue 8, Pages 483–485
(Mi jetpl414)
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This article is cited in 8 scientific papers (total in 8 papers)
CONDENSED MATTER
Experimental discovery of the anisotropy of phonon-plasmon modes in GaAs/AlAs(100) superlattices
V. A. Volodinab a Novosibirsk State University
b Institute of Semiconductor Physics of SB RAS
Abstract:
Doped (n-type) GaAs/AlAs superlattices with thicknesses of the GaAs and AlAs layers from 1.7 to 6.8 Å and 13.6 Å, respectively, have been studied by means of Raman spectroscopy. The use of a microattachment for Raman backscattering studies has allowed for the observation of the modes with the wave vector directed both across and along the superlattice layers (in the scattering from the side face of the superlattice). The theoretically predicted anisotropy of mixed phonon-plasmon modes caused by the anisotropy of the electron effective mass in the type II superlattices has been experimentally discovered.
Received: 18.03.2009
Citation:
V. A. Volodin, “Experimental discovery of the anisotropy of phonon-plasmon modes in GaAs/AlAs(100) superlattices”, Pis'ma v Zh. Èksper. Teoret. Fiz., 89:8 (2009), 483–485; JETP Letters, 89:8 (2009), 419–421
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https://www.mathnet.ru/eng/jetpl414 https://www.mathnet.ru/eng/jetpl/v89/i8/p483
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Abstract page: | 204 | Full-text PDF : | 72 | References: | 41 |
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