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Fizika i Tekhnika Poluprovodnikov, 2019, Volume 53, Issue 11, Pages 1467–1470
DOI: https://doi.org/10.21883/FTP.2019.11.48441.9142 (Mi phts5350) 		 
This article is cited in 4 scientific papers (total in 4 papers)

Spectroscopy, interaction with radiation

Luminescent properties of float zone silicon irradiated with swift heavy ions

S. G. Cherkovaa, V. A. Skuratovbcd, V. A. Volodinae

a Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
b Joint Institute for Nuclear Research, Dubna, Moscow region
c Dubna State University, Dubna, Moscow Reg.
d National Engineering Physics Institute "MEPhI", Moscow
e Novosibirsk State University
Full-text PDF (288 kB) Citations (4)
DOI: https://doi.org/10.21883/FTP.2019.11.48441.9142
Abstract: The float zone (high-resistance) silicon irradiated with swift heavy ions was studied by photoluminescence (PL) spectroscopy method. In addition to well-known X, W, W', R and C lines, a broad peak (1.3 – 1.5 $\mu$m) appears in PL spectra at low-temperatures. As the irradiation dose increases from 3$\cdot$10$^{11}$–10$^{13}$ cm$^{-2}$, the PL intensity decreases by about an order of magnitude, also a narrowing of the peak with red-shift is observed.
Keywords: photoluminescence, defects in silicon, swift heavy ions.
Funding agency Grant number
Ministry of Education and Science of the Russian Federation 0306-2019-0019
The study was supported by the Ministry of Education and Science of the Russian Federation, government order, Program of fundamental research no. 0306-2019-0019 for the Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences.
Received: 16.04.2019
Revised: 15.05.2019
Accepted: 17.06.2019
English version:
Semiconductors, 2019, Volume 53, Issue 11, Pages 1427–1430
DOI: https://doi.org/10.1134/S1063782619110046
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: S. G. Cherkova, V. A. Skuratov, V. A. Volodin, “Luminescent properties of float zone silicon irradiated with swift heavy ions”, Fizika i Tekhnika Poluprovodnikov, 53:11 (2019), 1467–1470; Semiconductors, 53:11 (2019), 1427–1430
Citation in format AMSBIB
\Bibitem{CheSkuVol19}
\by S.~G.~Cherkova, V.~A.~Skuratov, V.~A.~Volodin
\paper Luminescent properties of float zone silicon irradiated with swift heavy ions
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2019
\vol 53
\issue 11
\pages 1467--1470
\mathnet{http://mi.mathnet.ru/phts5350}
\crossref{https://doi.org/10.21883/FTP.2019.11.48441.9142}
\elib{https://elibrary.ru/item.asp?id=41300644 }
\transl
\jour Semiconductors
\yr 2019
\vol 53
\issue 11
\pages 1427--1430
\crossref{https://doi.org/10.1134/S1063782619110046}
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    • This publication is cited in the following 4 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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