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Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 7, Pages 952–957
(Mi phts6419)
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This article is cited in 10 scientific papers (total in 10 papers)
Semiconductor structures, low-dimensional systems, quantum phenomena
Optical properties of $p$–$i$–$n$ structures based on amorphous hydrogenated silicon with silicon nanocrystals formed via nanosecond laser annealing
G. K. Krivyakina, V. A. Volodinab, S. A. Kochubeia, G. N. Kamaeva, A. Purkrtc, Z. Remesc, R. Fajgard, T. H. Stuchlikovác, J. Stuchlikc a Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
b Novosibirsk State University
c Institute of Physics, Czech Academy of Sciences, Praha 6, Czech Republic
d Institute of Chemical Process Fundamentals of the CAS, Praha 6, Czech Republic
Abstract:
Silicon nanocrystals are formed in the i layers of $p$–$i$–$n$ structures based on a-Si:H using pulsed laser annealing. An excimer XeCl laser with a wavelength of 308 nm and a pulse duration of 15 ns is used. The laser fluence is varied from 100 (below the melting threshold) to 250 mJ/cm2 (above the threshold). The nanocrystal sizes are estimated by analyzing Raman spectra using the phonon confinement model. The average is from 2.5 to 3.5 nm, depending on the laser-annealing parameters. Current–voltage measurements show that the fabricated $p$–$i$–$n$ structures possess diode characteristics. An electroluminescence signal in the infrared (IR) range is detected for the $p$–$i$–$n$ structures with Si nanocrystals; the peak position (0.9–1 eV) varies with the laser-annealing parameters. Radiative transitions are presumably related to the nanocrystal–amorphous-matrix interface states. The proposed approach can be used to produce light-emitting diodes on non-refractory substrates.
Received: 28.12.2015 Accepted: 16.01.2016
Citation:
G. K. Krivyakin, V. A. Volodin, S. A. Kochubei, G. N. Kamaev, A. Purkrt, Z. Remes, R. Fajgar, T. H. Stuchliková, J. Stuchlik, “Optical properties of $p$–$i$–$n$ structures based on amorphous hydrogenated silicon with silicon nanocrystals formed via nanosecond laser annealing”, Fizika i Tekhnika Poluprovodnikov, 50:7 (2016), 952–957; Semiconductors, 50:7 (2016), 935–940
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https://www.mathnet.ru/eng/phts6419 https://www.mathnet.ru/eng/phts/v50/i7/p952
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