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Fizika i Tekhnika Poluprovodnikov, 2018, Volume 52, Issue 6, Pages 569–574
DOI: https://doi.org/10.21883/FTP.2018.06.45917.8671
(Mi phts5803)
 

This article is cited in 1 scientific paper (total in 1 paper)

Spectroscopy, interaction with radiation

Forbidden resonant Raman scattering in GaAs/AlAs superlattices: experiment and calculations

V. A. Volodinab, V. A. Sachkovc, M. P. Sinyukova

a Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
b Novosibirsk State University
c Omsk Scientific Center, Siberian Branch of the Russian Academy of Sciences
Full-text PDF (322 kB) Citations (1)
Abstract: The Raman spectra of GaAs/AlAs(100) superlattices are calculated and studied experimentally for various wave-vector directions. The experiments are performed when applying a confocal optical microscope combined with a micro-Raman spectrometer for various scattering geometries both for phonons with a wave vector directed along the normal to a superlattice and in the in-plane geometry. The frequencies and eigenvectors of phonons are calculated in the extended Born model approximation taking into account Coulomb interaction in the rigid-ion approximation. The Raman spectra are calculated in the scope of the deformation- potential mechanism; herewith, it turns out that additional peaks, which are not described in the scope of this approach, appear in the experimental spectra. It seems likely that these peaks appear due to the manifestation of Raman scattering forbidden by selection rules under resonance conditions. An attempt is made to explain the appearance of these peaks in the experimental spectra within the scope of inelastic phonon scattering at bound charges (phonons with a large dipole moment).
Funding agency Grant number
Siberian Branch of Russian Academy of Sciences II.9.4
Received: 20.06.2017
Accepted: 26.06.2017
English version:
Semiconductors, 2018, Volume 52, Issue 6, Pages 717–722
DOI: https://doi.org/10.1134/S1063782618060234
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: V. A. Volodin, V. A. Sachkov, M. P. Sinyukov, “Forbidden resonant Raman scattering in GaAs/AlAs superlattices: experiment and calculations”, Fizika i Tekhnika Poluprovodnikov, 52:6 (2018), 569–574; Semiconductors, 52:6 (2018), 717–722
Citation in format AMSBIB
\Bibitem{VolSacSin18}
\by V.~A.~Volodin, V.~A.~Sachkov, M.~P.~Sinyukov
\paper Forbidden resonant Raman scattering in GaAs/AlAs superlattices: experiment and calculations
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2018
\vol 52
\issue 6
\pages 569--574
\mathnet{http://mi.mathnet.ru/phts5803}
\crossref{https://doi.org/10.21883/FTP.2018.06.45917.8671}
\elib{https://elibrary.ru/item.asp?id=37051659}
\transl
\jour Semiconductors
\yr 2018
\vol 52
\issue 6
\pages 717--722
\crossref{https://doi.org/10.1134/S1063782618060234}
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  • https://www.mathnet.ru/eng/phts/v52/i6/p569
  • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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