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This article is cited in 6 scientific papers (total in 6 papers)
CONDENSED MATTER
Redshift of the absorption edge in tensile-strained germanium layers
V. A. Volodinab, L. V. Sokolova a Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, 630090, Russia
b Novosibirsk State University, Novosibirsk, 630090, Russia
Abstract:
Tensile-strained thin Ge films in InGaAs/Ge/InGaAs multilayer heterostructures grown by molecular-beam epitaxy on GaAs (001) substrates are investigated by Raman and optical transmission spectroscopy. Tensile biaxial strains in the films are as large as $1.9$ %. A long-wavelength shift (redshift) of the absorption edge in tensile-strained Ge films is observed. The optical gap decreases to $\sim0.48$ eV.
Received: 04.02.2015 Revised: 12.02.2015
Citation:
V. A. Volodin, L. V. Sokolov, “Redshift of the absorption edge in tensile-strained germanium layers”, Pis'ma v Zh. Èksper. Teoret. Fiz., 101:6 (2015), 455–458; JETP Letters, 101:6 (2015), 419–421
Linking options:
https://www.mathnet.ru/eng/jetpl4588 https://www.mathnet.ru/eng/jetpl/v101/i6/p455
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Abstract page: | 151 | Full-text PDF : | 36 | References: | 41 | First page: | 3 |
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