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Optics and Spectroscopy, 2021, Volume 129, Issue 5, Page 618 (Mi os1107)  

This article is cited in 5 scientific papers (total in 5 papers)

Spectroscopy of condensed matter

Atomic structure and optical properties of plasma enhanced chemical vapor deposited SiCOH Low-k dielectric film

V. N. Kruchinina, V. A. Volodinab, S. V. Rykhlitskiia, V. A. Gritsenkoabc, I. P. Posvirind, Xiaoping Shie, M. R. Baklanovfg

a Rzhanov Institute of Semiconductor Physics, SB RAS, Novosibirsk, Russia
b Novosibirsk State University
c Novosibirsk State Technical University
d Boreskov Institute of Catalysis SB RAS, Novosibirsk, Russia
e Beijing Naura Microelectronics, E-Town, Beijing, China
f North China University of Technology, Beijing, China
g Russian Technological University MIREA, Moscow, Russia
Full-text PDF (34 kB) Citations (5)
Abstract: The SiCOH low-k dielectric film was grown on Si substrate using plasma-enhanced chemical vapor deposition method. Atomic structure and optical properties of the film were studied with the use of X-ray photoelectron spectroscopy (XPS), Fourier transform infrared (FTIR) absorption spectroscopy, Raman spectroscopy, and ellipsometry. Analysis of XPS data showed that the low-k dielectric film consists of Si–O$_4$ bonds (83%) and Si–SiO$_3$ bonds (17%). In FTIR spectra some red-shift of Si–O–Si valence (stretching) vibration mode frequency was observed in the low-k dielectric film compared with the frequency of this mode in thermally grown SiO$_2$ film. The peaks related to absorbance by C–H bonds were observed in FTIR spectrum. According to Raman spectroscopy data, the film contained local Si–Si bonds and also C–C bonds in the $s$$p^3$ and $s$$p^2$ hybridized forms. Scanning laser ellipsometry data show that the film is quite homogeneous, homogeneity of thickness is $\sim$2.5%, and homogeneity of refractive index is $\sim$2%. According to the analysis of spectral ellipsometry data, the film is porous (porosity is about 24%) and contains clusters of amorphous carbon ($\sim$ 7%).
Keywords: low-k dielectrics, PECVD, optical properties, atomic structure.
Funding agency Grant number
Russian Foundation for Basic Research 18-29-27006
This work was supported by the Russian Foundation for Basic Research, project no. 18-29-27006.
Received: 06.10.2020
Revised: 03.12.2020
Accepted: 26.12.2020
English version:
Optics and Spectroscopy, 2021, Volume 129, Issue 6, Pages 645–651
DOI: https://doi.org/10.1134/S0030400X21050088
Document Type: Article
Language: English
Citation: V. N. Kruchinin, V. A. Volodin, S. V. Rykhlitskii, V. A. Gritsenko, I. P. Posvirin, Xiaoping Shi, M. R. Baklanov, “Atomic structure and optical properties of plasma enhanced chemical vapor deposited SiCOH Low-k dielectric film”, Optics and Spectroscopy, 129:5 (2021), 618; Optics and Spectroscopy, 129:6 (2021), 645–651
Citation in format AMSBIB
\Bibitem{KruVolRyk21}
\by V.~N.~Kruchinin, V.~A.~Volodin, S.~V.~Rykhlitskii, V.~A.~Gritsenko, I.~P.~Posvirin, Xiaoping~Shi, M.~R.~Baklanov
\paper Atomic structure and optical properties of plasma enhanced chemical vapor deposited SiCOH Low-k dielectric film
\jour Optics and Spectroscopy
\yr 2021
\vol 129
\issue 5
\pages 618
\mathnet{http://mi.mathnet.ru/os1107}
\transl
\jour Optics and Spectroscopy
\yr 2021
\vol 129
\issue 6
\pages 645--651
\crossref{https://doi.org/10.1134/S0030400X21050088}
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  • This publication is cited in the following 5 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    Optics and Spectroscopy Optics and Spectroscopy
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