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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2011, Volume 93, Issue 10, Pages 665–668
(Mi jetpl1911)
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This article is cited in 12 scientific papers (total in 12 papers)
CONDENSED MATTER
Femtosecond pulse crystallization of thin amorphous hydrogenated films on glass substrates using near ultraviolet laser radiation
V. A. Volodina, A. S. Kackoa, A. G. Cherkova, A. V. Latyshevba, J. Kochc, B. N. Chichkovc a A. V. Rzhanov Institute of Semiconductor Physics of SB RAS, Novosibirsk
b Novosibirsk State University
c Laser Zentrum Hannover
Abstract:
Femtosecond laser treatments (second harmonic of Ti-sapphire laser, $\lambda\approx400$ nm wavelength, $<30$ fs pulse duration) were applied for crystallization of thin hydrogenated amorphous silicon films on glass substrates. The concentration of atomic hydrogen in the films was varied from $10$ to $\approx35\%$. The energy densities (laser fluences) for crystallization of the films with thicknesses from $20$ to $130$ nm were found. Assumedly, non-thermal processes (plasma annealing) take place in phase transition caused ultra-fast pulses. The developed approach can be used for creation of polycrystalline silicon films on non-refractory substrates.
Received: 15.03.2011 Revised: 11.04.2011
Citation:
V. A. Volodin, A. S. Kacko, A. G. Cherkov, A. V. Latyshev, J. Koch, B. N. Chichkov, “Femtosecond pulse crystallization of thin amorphous hydrogenated films on glass substrates using near ultraviolet laser radiation”, Pis'ma v Zh. Èksper. Teoret. Fiz., 93:10 (2011), 665–668; JETP Letters, 93:10 (2011), 603–606
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https://www.mathnet.ru/eng/jetpl1911 https://www.mathnet.ru/eng/jetpl/v93/i10/p665
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Abstract page: | 273 | Full-text PDF : | 81 | References: | 57 |
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