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This article is cited in 1 scientific paper (total in 1 paper)
OPTICS AND NUCLEAR PHYSICS
Vibrational and light-emitting properties of Si/Si$_{1-x}$Sn$_x$ heterostructures
V. A. Volodinab, V. A. Timofeevb, A. I. Nikiforovb, M. Stoffelc, H. Rinnertc, M. Vergnatc a Novosibirsk State University, Novosibirsk, Russia
b Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
c Université de Lorraine, Institut Jean Lamour Unités Mixtes de Recherche Centre national de la recherche scientifique 7198,
Vandoeuvre-lès-Nancy Cedex, France
Abstract:
Multilayer heterostructures Si/Si$_{1-x}$Sn$_x$ grown by molecular beam epitaxy on Si (001) substrates have been studied by Raman and photoluminescence spectroscopy. Raman spectra exhibit peaks corresponding to the vibrations of Si-Sn and Sn-Sn bonds; the vibrations of Sn-Sn bonds imply the presence of tin nanocrystals in heterostructures. Two photoluminescence bands at 0.75 eV (1650 nm) and 0.65 eV (1900 nm) have been observed in heterostructures at low temperatures. The former band can be attributed to optical transitions in quantum wells in the type II heterostructure Si/Si$_{1-x}$Sn$_x$. The latter band can be associated with excitons localized in tin nanocrystals.
Received: 20.12.2018 Revised: 09.01.2019 Accepted: 09.01.2019
Citation:
V. A. Volodin, V. A. Timofeev, A. I. Nikiforov, M. Stoffel, H. Rinnert, M. Vergnat, “Vibrational and light-emitting properties of Si/Si$_{1-x}$Sn$_x$ heterostructures”, Pis'ma v Zh. Èksper. Teoret. Fiz., 109:6 (2019), 371–374; JETP Letters, 109:6 (2019), 368–371
Linking options:
https://www.mathnet.ru/eng/jetpl5850 https://www.mathnet.ru/eng/jetpl/v109/i6/p371
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Abstract page: | 322 | Full-text PDF : | 13 | References: | 31 | First page: | 3 |
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