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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2012, Volume 95, Issue 8, Pages 472–476
(Mi jetpl2539)
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This article is cited in 9 scientific papers (total in 9 papers)
CONDENSED MATTER
Anomalous temperature dependence of photoluminescence in
GeO$_{x}$
D. V. Marinab, V. A. Volodinab, H. Rinnertc, M. Vergnatc a A. V. Rzhanov Institute of Semiconductor Physics of SB RAS, Novosibirsk
b Novosibirsk State University
c Institut Jean Lamour UMR CNRS 7198 - Nancy Universit\'{e} - UPV Metz, Facult\'{e} des Sciences et Technologies
Abstract:
The optical properties of GeO$_x$ film and GeO$_x$/SiO$_2$ multilayer heterostructures (with
thickness of GeO$_x$ layers down to 1 nm) were studied with the use of Raman scattering and IR
spectroscopy, ellipsometry and photoluminescence spectroscopy including temperature
dependence of photoluminescence. The observed photoluminescence is related to defect
(dangling bonds) in GeO$_x$ and interface defects for the case of GeO$_x$/SiO$_2$ multilayer
heterostructures. From analysis of temperature dependence of PL intensity, it was found that rate
of nonradiative transitions in GeO$_x$ film has Berthelot type, but anomalous deviations from
Berthelot type temperature dependence were observed in temperature dependences of PL
intensities for GeO$_x$/SiO$_2$ multilayer heterostructures.
Received: 15.03.2012
Citation:
D. V. Marin, V. A. Volodin, H. Rinnert, M. Vergnat, “Anomalous temperature dependence of photoluminescence in
GeO$_{x}$”, Pis'ma v Zh. Èksper. Teoret. Fiz., 95:8 (2012), 472–476; JETP Letters, 95:8 (2012), 424–428
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https://www.mathnet.ru/eng/jetpl2539 https://www.mathnet.ru/eng/jetpl/v95/i8/p472
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Abstract page: | 249 | Full-text PDF : | 62 | References: | 42 | First page: | 2 |
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