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Fizika i Tekhnika Poluprovodnikov, 2018, Volume 52, Issue 5, Page 517 (Mi phts5843)  

This article is cited in 2 scientific papers (total in 2 papers)

XXV International Symposium ''Nanostructures: Physics and Technology'', Saint Petersburg, June 26-30, 2017
Nanostructure Technology

New method of porous Ge layer fabrication: structure and optical properties

E. B. Gorokhova, K. N. Astankovaa, I. A. Azarovab, V. A. Volodinab, A. V. Latyshevab

a Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, 630090 Novosibirsk, Russia
b Novosibirsk State University, 630090 Novosibirsk, Russia
Full-text PDF (27 kB) Citations (2)
Abstract: Porous germanium films were produced by selective removal of the GeO$_2$ matrix from the GeO$_2\langle$Ge–NCs$\rangle$ heterolayer in deionized water or HF. On the basis of Raman and infrared spectroscopy data it was supposed that a stable skeletal framework from agglomerated Ge nanoparticles (amorphous or crystalline) was formed after the selective etching of GeO$_2\langle$Ge–NCs$\rangle$ heterolayers. The kinetics of air oxidation of amorphous porous Ge layers was investigated by scanning ellipsometry. Spectral ellipsometry allowed estimating the porosity of amorphous and crystalline porous Ge layers, which was $\sim$70 and $\sim$80%, respectively.
Funding agency Grant number
Russian Foundation for Basic Research 16-07-00975
Russian Science Foundation 14-22-00143
Ellipsometry and Raman measurements were funded by the Russian Foundation for Basic Research (project No 16-07-00975). SEM and IR spectroscopy investigations were carried out with the financial support of the Russian Science Foundation (project No 14-22-00143).
English version:
Semiconductors, 2018, Volume 52, Issue 5, Pages 628–631
DOI: https://doi.org/10.1134/S1063782618050111
Bibliographic databases:
Document Type: Article
Language: English
Citation: E. B. Gorokhov, K. N. Astankova, I. A. Azarov, V. A. Volodin, A. V. Latyshev, “New method of porous Ge layer fabrication: structure and optical properties”, Fizika i Tekhnika Poluprovodnikov, 52:5 (2018), 517; Semiconductors, 52:5 (2018), 628–631
Citation in format AMSBIB
\Bibitem{GorAstAza18}
\by E.~B.~Gorokhov, K.~N.~Astankova, I.~A.~Azarov, V.~A.~Volodin, A.~V.~Latyshev
\paper New method of porous Ge layer fabrication: structure and optical properties
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2018
\vol 52
\issue 5
\pages 517
\mathnet{http://mi.mathnet.ru/phts5843}
\elib{https://elibrary.ru/item.asp?id=32740381}
\transl
\jour Semiconductors
\yr 2018
\vol 52
\issue 5
\pages 628--631
\crossref{https://doi.org/10.1134/S1063782618050111}
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  • https://www.mathnet.ru/eng/phts/v52/i5/p517
  • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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