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This article is cited in 1 scientific paper (total in 1 paper)
Electron-beam crystallization of thin films of amorphous silicon suboxide
E. A. Baranova, V. O. Konstantinova, V. G. Shchukina, A. O. Zamchiyab, I. E. Merkulovaab, N. A. Lunevab, V. A. Volodincb a S.S. Kutateladze Institute of Thermophysics, Siberian Division of the Russian Academy of Sciences
b Novosibirsk State University
c Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
Abstract:
Polycrystalline silicon (poly-Si) has been obtained for the first time as a result of irradiating a film of amorphous hydrogenated silicon suboxide with the stoichiometric coefficient of 0.5 ($\alpha$-SiO$_{0.5}$:H) and thickness of 580 nm by an electron beam. The electron-beam accelerating voltage and current are 2000 V and 100 mA, respectively. Raman spectra of the silicon films after annealing are obtained as dependent on the time of electron-beam irradiation of the initial material. It is shown that the stress in polycrystalline silicon formed as a result of annealing changes from compression to extension, depending on the irradiation time.
Keywords:
silicon suboxide thin films, electron beam annealing, polycrystalline silicon.
Received: 24.09.2020 Revised: 30.11.2020 Accepted: 06.12.2020
Citation:
E. A. Baranov, V. O. Konstantinov, V. G. Shchukin, A. O. Zamchiy, I. E. Merkulova, N. A. Lunev, V. A. Volodin, “Electron-beam crystallization of thin films of amorphous silicon suboxide”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:6 (2021), 26–28; Tech. Phys. Lett., 47:3 (2021), 263–265
Linking options:
https://www.mathnet.ru/eng/pjtf4827 https://www.mathnet.ru/eng/pjtf/v47/i6/p26
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