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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2021, Volume 47, Issue 6, Pages 26–28
DOI: https://doi.org/10.21883/PJTF.2021.06.50754.18560 (Mi pjtf4827) 		 
This article is cited in 1 scientific paper (total in 1 paper)

Electron-beam crystallization of thin films of amorphous silicon suboxide

E. A. Baranova, V. O. Konstantinova, V. G. Shchukina, A. O. Zamchiyab, I. E. Merkulovaab, N. A. Lunevab, V. A. Volodincb

a S.S. Kutateladze Institute of Thermophysics, Siberian Division of the Russian Academy of Sciences
b Novosibirsk State University
c Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
Full-text PDF (605 kB) Citations (1)
DOI: https://doi.org/10.21883/PJTF.2021.06.50754.18560
Abstract: Polycrystalline silicon (poly-Si) has been obtained for the first time as a result of irradiating a film of amorphous hydrogenated silicon suboxide with the stoichiometric coefficient of 0.5 ($\alpha$-SiO$_{0.5}$:H) and thickness of 580 nm by an electron beam. The electron-beam accelerating voltage and current are 2000 V and 100 mA, respectively. Raman spectra of the silicon films after annealing are obtained as dependent on the time of electron-beam irradiation of the initial material. It is shown that the stress in polycrystalline silicon formed as a result of annealing changes from compression to extension, depending on the irradiation time.
Keywords: silicon suboxide thin films, electron beam annealing, polycrystalline silicon.
Funding agency Grant number
Ministry of Education and Science of the Russian Federation МК-638.2019.8
Russian Foundation for Basic Research 19-08-00848
This study was supported by a grant of the President of the Russian Federation (no. MK-638.2019.8) in the part concerning the synthesis and diagnostics of silicon suboxide films and by the Russian Foundation for Basic Research (project no. 19-08-00848) in the part concerning the electron-beam annealing.
Received: 24.09.2020
Revised: 30.11.2020
Accepted: 06.12.2020
English version:
Technical Physics Letters, 2021, Volume 47, Issue 3, Pages 263–265
DOI: https://doi.org/10.1134/S1063785021030172
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: E. A. Baranov, V. O. Konstantinov, V. G. Shchukin, A. O. Zamchiy, I. E. Merkulova, N. A. Lunev, V. A. Volodin, “Electron-beam crystallization of thin films of amorphous silicon suboxide”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:6 (2021), 26–28; Tech. Phys. Lett., 47:3 (2021), 263–265
Citation in format AMSBIB
\Bibitem{BarKonShc21}
\by E.~A.~Baranov, V.~O.~Konstantinov, V.~G.~Shchukin, A.~O.~Zamchiy, I.~E.~Merkulova, N.~A.~Lunev, V.~A.~Volodin
\paper Electron-beam crystallization of thin films of amorphous silicon suboxide
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2021
\vol 47
\issue 6
\pages 26--28
\mathnet{http://mi.mathnet.ru/pjtf4827}
\crossref{https://doi.org/10.21883/PJTF.2021.06.50754.18560}
\elib{https://elibrary.ru/item.asp?id=46301747}
\transl
\jour Tech. Phys. Lett.
\yr 2021
\vol 47
\issue 3
\pages 263--265
\crossref{https://doi.org/10.1134/S1063785021030172}
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    • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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