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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2005, Volume 82, Issue 2, Pages 91–94
(Mi jetpl1512)
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This article is cited in 12 scientific papers (total in 12 papers)
CONDENSED MATTER
Electron-phonon interaction in boron-doped silicon nanocrystals: Effect of Fano interference on the Raman spectrum
V. A. Volodin, M. D. Efremov Institute of Semiconductor Physics of Siberian Branch of RAS
Abstract:
Raman spectroscopy is employed for studying silicon nanocrystal arrays in boron-doped amorphous silicon films. The nanocrystals were formed in the initial amorphous films by the pulsed impact of an excimer laser. The electron-phonon interaction effects are observed experimentally in the heterostructure formed by a silicon nanocrystal and an amorphous matrix. These effects can be described in the framework of the familiar Fano interference model.
Received: 14.06.2005
Citation:
V. A. Volodin, M. D. Efremov, “Electron-phonon interaction in boron-doped silicon nanocrystals: Effect of Fano interference on the Raman spectrum”, Pis'ma v Zh. Èksper. Teoret. Fiz., 82:2 (2005), 91–94; JETP Letters, 82:2 (2005), 86–88
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https://www.mathnet.ru/eng/jetpl1512 https://www.mathnet.ru/eng/jetpl/v82/i2/p91
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Abstract page: | 246 | Full-text PDF : | 100 | References: | 39 |
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