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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2005, Volume 82, Issue 2, Pages 91–94 (Mi jetpl1512)  

This article is cited in 12 scientific papers (total in 12 papers)

CONDENSED MATTER

Electron-phonon interaction in boron-doped silicon nanocrystals: Effect of Fano interference on the Raman spectrum

V. A. Volodin, M. D. Efremov

Institute of Semiconductor Physics of Siberian Branch of RAS
References:
Abstract: Raman spectroscopy is employed for studying silicon nanocrystal arrays in boron-doped amorphous silicon films. The nanocrystals were formed in the initial amorphous films by the pulsed impact of an excimer laser. The electron-phonon interaction effects are observed experimentally in the heterostructure formed by a silicon nanocrystal and an amorphous matrix. These effects can be described in the framework of the familiar Fano interference model.
Received: 14.06.2005
English version:
Journal of Experimental and Theoretical Physics Letters, 2005, Volume 82, Issue 2, Pages 86–88
DOI: https://doi.org/10.1134/1.2056633
Bibliographic databases:
Document Type: Article
PACS: 61.46.+w, 63.20.Kr, 63.22.+m, 78.30.-j
Language: Russian


Citation: V. A. Volodin, M. D. Efremov, “Electron-phonon interaction in boron-doped silicon nanocrystals: Effect of Fano interference on the Raman spectrum”, Pis'ma v Zh. Èksper. Teoret. Fiz., 82:2 (2005), 91–94; JETP Letters, 82:2 (2005), 86–88
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  • https://www.mathnet.ru/eng/jetpl/v82/i2/p91
  • This publication is cited in the following 12 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    Письма в Журнал экспериментальной и теоретической физики Pis'ma v Zhurnal Иksperimental'noi i Teoreticheskoi Fiziki
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