Abstract:
Raman spectroscopy is employed for studying silicon nanocrystal arrays in boron-doped amorphous silicon films. The nanocrystals were formed in the initial amorphous films by the pulsed impact of an excimer laser. The electron-phonon interaction effects are observed experimentally in the heterostructure formed by a silicon nanocrystal and an amorphous matrix. These effects can be described in the framework of the familiar Fano interference model.
Citation:
V. A. Volodin, M. D. Efremov, “Electron-phonon interaction in boron-doped silicon nanocrystals: Effect of Fano interference on the Raman spectrum”, Pis'ma v Zh. Èksper. Teoret. Fiz., 82:2 (2005), 91–94; JETP Letters, 82:2 (2005), 86–88
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https://www.mathnet.ru/eng/jetpl1512
https://www.mathnet.ru/eng/jetpl/v82/i2/p91
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