|
|
|
Publications in Math-Net.Ru |
Citations |
|
2024 |
| 1. |
P. S. Gavrina, A. A. Podoskin, I. Shushkanov, S. O. Slipchenko, N. A. Pikhtin, T. A. Bagaev, M. A. Ladugin, A. A. Marmalyuk, V. A. Simakov, “Температурная зависимость выходной оптической мощности полупроводниковых лазеров-тиристоров на основе гетероструктур AlGaAs/GaAs/InGaAs”, Kvantovaya Elektronika, 54:4 (2024), 218–223  |
| 2. |
K. A. Podgaetskii, A. V. Lobintsov, A. I. Danilov, A. V. Ivanov, M. A. Ladugin, A. A. Marmalyuk, E. V. Kuznetsov, V. V. Dyudelev, D. A. Mikhailov, D. V. Chistyakov, E. A. Kognovitskaya, S. N. Losev, S. H. Abdulrazak, A. V. Babichev, G. M. Savchenko, A. V. Lyutetskiy, S. O. Slipchenko, N. A. Pikhtin, A. G. Gladyshev, I. I. Novikov, L. Ya. Karachinsky, A. Yu. Egorov, G. S. Sokolovskii, “Квантовые каскадные лазеры InGaAs/AlInAs/InP с отражающими и просветляющими оптическими покрытиями”, Kvantovaya Elektronika, 54:2 (2024), 100–103 |
|
2023 |
| 3. |
K. A. Podgaetskii, A. V. Lobintsov, A. I. Danilov, A. V. Ivanov, M. A. Ladugin, A. A. Marmalyuk, E. V. Kuznetsov, V. V. Dyudelev, D. A. Mikhailov, D. V. Chistyakov, A. V. Babichev, E. A. Kognovitskaya, A. V. Lyutetskiy, S. O. Slipchenko, N. A. Pikhtin, A. G. Gladyshev, I. I. Novikov, L. Ya. Karachinsky, A. Yu. Egorov, G. S. Sokolovskii, “Metal–dielectric mirror coatings for 4–5-μm quantum-cascade lasers”, Kvantovaya Elektronika, 53:8 (2023), 641–644 [Bull. Lebedev Physics Institute, 50:suppl. 12 (2023), S1356–S1360] |
1
|
| 4. |
S. O. Slipchenko, A. A. Podoskin, D. N. Nikolaev, V. V. Shamakhov, I. S. Shashkin, M. Kandratov, I. Gordeev, A. E. Grishin, A. E. Kazakova, P. S. Gavrina, K. Bakhvalov, P. S. Kop'ev, N. A. Pikhtin, “High-power multimode semiconductor lasers (976 nm) based on asymmetric heterostructures with a broadened waveguide and reduced vertical divergence”, Kvantovaya Elektronika, 53:5 (2023), 374–378 [Bull. Lebedev Physics Institute, 50:suppl. 9 (2023), S976–S983] |
| 5. |
K. A. Podgaetskii, A. V. Lobintsov, A. I. Danilov, A. V. Ivanov, M. A. Ladugin, A. A. Marmalyuk, V. V. Dyudelev, D. A. Mikhailov, D. V. Chistyakov, A. V. Babichev, G. M. Savchenko, A. V. Lyutetskiy, S. O. Slipchenko, N. A. Pikhtin, A. G. Gladyshev, I. I. Novikov, L. Ya. Karachinsky, A. Yu. Egorov, G. S. Sokolovskii, “Dielectric highly reflective mirror coatings for quantum cascade lasers with 4 - 5 μm emission wavelength”, Kvantovaya Elektronika, 53:5 (2023), 370–373 |
1
|
| 6. |
S. O. Slipchenko, O. S. Soboleva, V. S. Golovin, N. A. Pikhtin, “Cavity optimisation of high-power InGaAs/AlGaAs/GaAs semiconductor lasers (<i>λ</i>=1060 nm) for efficient operation at ultrahigh pulsed pump currents”, Kvantovaya Elektronika, 53:1 (2023), 17–24 [Bull. Lebedev Physics Institute, 50:suppl. 5 (2023), S535–S546] |
2
|
| 7. |
S. O. Slipchenko, A. A. Podoskin, V. V. Zolotarev, L. S. Vavilova, A. Yu. Leshko, M. G. Rastegaeva, I. V. Miroshnikov, I. S. Shashkin, N. A. Pikhtin, T. A. Bagaev, M. A. Ladugin, A. A. Padalitsa, A. A. Marmalyuk, V. A. Simakov, “High power and repetition rate integral laser source (1060 nm) based on laser diode array and 2D multi-element opto-thyristor array as a high-speed current switch”, Kvantovaya Elektronika, 53:1 (2023), 11–16 [Bull. Lebedev Physics Institute, 50:suppl. 5 (2023), S527–S534] |
1
|
| 8. |
S. O. Slipchenko, A. A. Podoskin, V. A. Kryuchkov, V. A. Strelets, I. S. Shashkin, N. A. Pikhtin, “Quasi-cw high-power laser diode mini bars (<i>λ</i>=976 nm) with increased length of a resonator based on asymmetric heterostructures with a broadened waveguide”, Kvantovaya Elektronika, 53:1 (2023), 6–10 [Bull. Lebedev Physics Institute, 50:suppl. 5 (2023), S520–S526] |
| 9. |
A. A. Podoskin, I. Shushkanov, V. V. Shamakhov, A. Rizaev, M. Kondratov, A. A. Klimov, S. V. Zazulin, S. O. Slipchenko, N. A. Pikhtin, “Laser diodes (850nm) based on an asymmetric AlGaAs/GaAs heterostructure with a bulk active region for generating high-power subnanosecond optical pulses”, Kvantovaya Elektronika, 53:1 (2023), 1–5 [Bull. Lebedev Physics Institute, 50:suppl. 5 (2023), S513–S519] |
|
2022 |
| 10. |
S. O. Slipchenko, D. A. Veselov, V. V. Zolotarev, A. V. Lyutetskiy, A. A. Podoskin, Z. N. Sokolova, V. V. Shamakhov, I. S. Shashkin, P. S. Kop'ev, N. A. Pikhtin, “High-power laser diodes based on InGaAs(Р)/Al(In)GaAs(P)/GaAs heterostructures with low internal optical losses”, Kvantovaya Elektronika, 52:12 (2022), 1152–1165 [Bull. Lebedev Physics Institute, 50:suppl. 4 (2023), S494–S512] |
7
|
| 11. |
V. V. Zolotarev, A. Rizaev, A. V. Lyutetskiy, S. O. Slipchenko, N. A. Pikhtin, “Lateral waveguide mode selection for the development of single-mode ridge lasers with a distributed Bragg mirror”, Kvantovaya Elektronika, 52:10 (2022), 889–894 [Bull. Lebedev Physics Institute, 50:suppl. 2 (2023), S154–S162] |
1
|
| 12. |
I. S. Shashkin, A. D. Rybkin, V. A. Kryuchkov, A. E. Kazakova, D. N. Romanovich, N. A. Rudova, S. O. Slipchenko, N. A. Pikhtin, “Investigation of the quasi-cw heating dynamics of an active region of high-power semiconductor lasers (<i>λ</i> = 1060 nm) with an ultra-wide emitting aperture (800 μm)”, Kvantovaya Elektronika, 52:9 (2022), 794–798 [Bull. Lebedev Physics Institute, 50:suppl. 1 (2023), S18–S24] |
2
|
| 13. |
S. O. Slipchenko, V. S. Golovin, O. S. Soboleva, I. A. Lamkin, N. A. Pikhtin, “Analysis of light–current characteristics of high-power semiconductor lasers (1060 nm) in a steady-state 2D model”, Kvantovaya Elektronika, 52:4 (2022), 343–350 [Quantum Electron., 52:4 (2022), 343–350  ] |
6
|
| 14. |
S. O. Slipchenko, D. N. Romanovich, V. A. Kapitonov, K. V. Bakhvalov, N. A. Pikhtin, P. S. Kop'ev, “High-power quasi-cw semiconductor lasers (1060 nm) with an ultra-wide emitting aperture”, Kvantovaya Elektronika, 52:4 (2022), 340–342 [Quantum Electron., 52:4 (2022), 340–342 ] |
3
|
| 15. |
S. O. Slipchenko, D. N. Romanovich, P. S. Gavrina, D. A. Veselov, T. A. Bagaev, M. A. Ladugin, A. A. Marmalyuk, N. A. Pikhtin, “High-power mesa-stripe semiconductor lasers (910 nm) with an ultra-wide emitting aperture based on tunnel-coupled InGaAs/AlGaAs/GaAs heterostructures”, Kvantovaya Elektronika, 52:2 (2022), 174–178 [Quantum Electron., 52:2 (2022), 174–178  ] |
3
|
| 16. |
S. O. Slipchenko, A. A. Podoskin, D. A. Veselov, L. S. Efremov, V. V. Zolotarev, A. E. Kazakova, P. S. Kop'ev, N. A. Pikhtin, “Vertical stacks of pulsed (100 ns) mesa-stripe semiconductor lasers with an ultra-wide (800 μm) aperture emitting kilowatt-level peak power at a wavelength of 1060 nm”, Kvantovaya Elektronika, 52:2 (2022), 171–173 [Quantum Electron., 52:2 (2022), 171–173 ] |
7
|
|
2021 |
| 17. |
Z. N. Sokolova, N. A. Pikhtin, S. O. Slipchenko, L. V. Asryan, “Operating characteristics of semiconductor quantum well lasers as functions of the waveguide region thickness”, Fizika i Tekhnika Poluprovodnikov, 55:12 (2021), 1229–1235  |
| 18. |
A. V. Babichev, E. S. Kolodeznyi, A. G. Gladyshev, D. V. Denisov, G. V. Voznyuk, M. I. Mitrofanov, D. A. Mikhailov, D. V. Chistyakov, D. I. Kuritsyn, V. V. Dyudelev, S. O. Slipchenko, A. V. Lyutetskiy, V. P. Evtikhiev, L. Ya. Karachinsky, I. I. Novikov, S. V. Morozov, G. S. Sokolovskii, N. A. Pikhtin, A. Yu. Egorov, “Quantum-cascade laser with radiation output through a textured layer”, Fizika i Tekhnika Poluprovodnikov, 55:11 (2021), 1081–1085 ; Semiconductors, 56:1 (2022), 1–4 |
| 19. |
A. V. Babichev, E. S. Kolodeznyi, A. G. Gladyshev, D. V. Denisov, G. V. Voznyuk, M. I. Mitrofanov, N. Yu. Kharin, V. Yu. Panevin, S. O. Slipchenko, A. V. Lyutetskiy, V. P. Evtikhiev, L. Ya. Karachinsky, I. I. Novikov, N. A. Pikhtin, A. Yu. Egorov, “Surface emitting quantum-cascade ring laser”, Fizika i Tekhnika Poluprovodnikov, 55:7 (2021), 602–606 ; Semiconductors, 55:7 (2021), 591–594 |
2
|
| 20. |
A. A. Podoskin, P. S. Gavrina, V. S. Golovin, S. O. Slipchenko, D. N. Romanovich, V. A. Kapitonov, I. V. Miroshnikov, N. A. Pikhtin, T. A. Bagaev, M. A. Ladugin, A. A. Marmalyuk, V. A. Simakov, “Turn on process spatial dynamics of a thyristor laser (905nm) based on an AlGaAs/InGaAs/GaAs heterostructure”, Fizika i Tekhnika Poluprovodnikov, 55:5 (2021), 466–472 |
| 21. |
A. A. Podoskin, D. N. Romanovich, I. S. Shashkin, P. S. Gavrina, Z. N. Sokolova, S. O. Slipchenko, N. A. Pikhtin, “Analysis of the threshold conditions and lasing efficiency of internally circulating modes in large rectangular cavities based on AlGaAs/GaAs/InGaAs laser heterostructures”, Fizika i Tekhnika Poluprovodnikov, 55:5 (2021), 460–465 ; Semiconductors, 55:5 (2021), 518–523 |
| 22. |
O. S. Soboleva, S. O. Slipchenko, N. A. Pikhtin, “Isotype $n$-AlGaAs/$n$-GaAs heterostructures optimized for efficient interband radiative recombination under current pumping”, Fizika i Tekhnika Poluprovodnikov, 55:5 (2021), 427–433 ; Semiconductors, 55 (2021), s8–s13 |
1
|
| 23. |
I. S. Shashkin, A. Yu. Leshko, V. V. Shamakhov, N. V. Voronkova, V. A. Kapitonov, K. V. Bakhvalov, S. O. Slipchenko, N. A. Pikhtin, P. S. Kop'ev, “High-power CW InGaAs/AlGaAs (1070 nm) lasers with a broadened lateral waveguide of a mesa-stripe structure”, Fizika i Tekhnika Poluprovodnikov, 55:4 (2021), 344–348 ; Semiconductors, 55:4 (2021), 455–459 |
6
|
| 24. |
P. V. Seredin, D. L. Goloshchapov, Yu. Yu. Khudyakov, I. N. Arsent'ev, D. N. Nikolaev, N. A. Pikhtin, S. O. Slipchenko, H. Leiste, “Structural and spectroscopic studies of epitaxial GaAs layers grown on compliant substrates based on a superstructure layer and protoporous silicon”, Fizika i Tekhnika Poluprovodnikov, 55:1 (2021), 86–95 ; Semiconductors, 55:1 (2021), 122–131 |
1
|
| 25. |
P. V. Seredin, D. L. Goloshchapov, I. N. Arsent'ev, D. N. Nikolaev, N. A. Pikhtin, S. O. Slipchenko, “Spectroscopic studies of integrated GaAs/Si heterostructures”, Fizika i Tekhnika Poluprovodnikov, 55:1 (2021), 34–40 ; Semiconductors, 55:1 (2021), 44–50 |
3
|
| 26. |
A. V. Babichev, A. G. Gladyshev, D. V. Denisov, V. V. Dyudelev, D. A. Mikhailov, S. O. Slipchenko, A. V. Lyutetskiy, L. Ya. Karachinsky, I. I. Novikov, A. Yu. Andreev, I. V. Yarotskaya, K. A. Podgaetskii, A. A. Marmalyuk, A. A. Padalitsa, M. A. Ladugin, N. A. Pikhtin, G. S. Sokolovskii, A. Yu. Egorov, “Heterostructures of quantum-cascade lasers with nonselective overgrowth by metalorganic vapour phase epitaxy”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:24 (2021), 46–50 |
1
|
| 27. |
I. S. Shashkin, A. Yu. Leshko, V. V. Shamakhov, D. N. Romanovich, V. A. Kapitonov, K. V. Bakhvalov, S. O. Slipchenko, N. A. Pikhtin, P. S. Kop'ev, “Output optical power dynamics of semiconductor lasers (1070 nm) with a few-mode lateral waveguide of mesa-stripe design at ultrahigh drive currents”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:7 (2021), 42–45 ; Tech. Phys. Lett., 47:5 (2021), 368–371 |
1
|
| 28. |
Yu. K. Bobretsova, D. A. Veselov, A. A. Klimov, K. V. Bakhvalov, V. V. Shamakhov, S. O. Slipchenko, V. V. Andryushkin, N. A. Pikhtin, “Optical absorption in a waveguide based on an n-type AlGaAs heterostructure”, Kvantovaya Elektronika, 51:11 (2021), 987–991 [Quantum Electron., 51:11 (2021), 987–991 ] |
2
|
| 29. |
T. A. Bagaev, N. V. Gul'tikov, M. A. Ladugin, A. A. Marmalyuk, Yu. V. Kurnyavko, V. V. Krichevskii, A. M. Morozyuk, V. P. Konyaev, V. A. Simakov, S. O. Slipchenko, A. A. Podoskin, N. A. Pikhtin, A. E. Kazakova, D. N. Romanovich, V. A. Kryuchkov, “High-power pulsed hybrid semiconductor lasers emitting in the wavelength range 900–920 nm”, Kvantovaya Elektronika, 51:10 (2021), 912–914 [Quantum Electron., 51:10 (2021), 912–914 ] |
3
|
| 30. |
V. N. Svetogorov, Yu. L. Ryaboshtan, N. A. Volkov, M. A. Ladugin, A. A. Padalitsa, A. A. Marmalyuk, K. V. Bakhvalov, D. A. Veselov, A. V. Lyutetskiy, V. A. Strelets, S. O. Slipchenko, N. A. Pikhtin, “High-power AlGaInAs/InP semiconductor lasers with an ultra-narrow waveguide emitting in the spectral range 1.9–2.0 μm”, Kvantovaya Elektronika, 51:10 (2021), 909–911 [Quantum Electron., 51:10 (2021), 909–911 ] |
1
|
| 31. |
N. A. Volkov, T. A. Bagaev, D. R. Sabitov, A. Yu. Andreev, I. V. Yarotskaya, A. A. Padalitsa, M. A. Ladugin, A. A. Marmalyuk, K. V. Bakhvalov, D. A. Veselov, A. V. Lyutetskiy, N. A. Rudova, V. A. Strelets, S. O. Slipchenko, N. A. Pikhtin, “InGaAs/AlGaAs/GaAs semiconductor lasers ($\lambda$ = 900–920 nm) with broadened asymmetric waveguides and improved current–voltage characteristics”, Kvantovaya Elektronika, 51:10 (2021), 905–908 [Quantum Electron., 51:10 (2021), 905–908 ] |
3
|
| 32. |
N. A. Volkov, V. N. Svetogorov, Yu. L. Ryaboshtan, A. Yu. Andreev, I. V. Yarotskaya, M. A. Ladugin, A. A. Padalitsa, A. A. Marmalyuk, S. O. Slipchenko, A. V. Lyutetskiy, D. A. Veselov, N. A. Pikhtin, “Comparison of AlGaInAs/InP semiconductor lasers (λ = 1450–1500 nm) with ultra-narrow and strongly asymmetric waveguides”, Kvantovaya Elektronika, 51:4 (2021), 283–286 [Quantum Electron., 51:4 (2021), 283–286 ] |
5
|
| 33. |
N. A. Volkov, A. Yu. Andreev, I. V. Yarotskaya, Yu. L. Ryaboshtan, V. N. Svetogorov, M. A. Ladugin, A. A. Padalitsa, A. A. Marmalyuk, S. O. Slipchenko, A. V. Lyutetskiy, D. A. Veselov, N. A. Pikhtin, “Semiconductor AlGaInAs/InP lasers (λ = 1450 – 1500 nm) with a strongly asymmetric waveguide”, Kvantovaya Elektronika, 51:2 (2021), 133–136 [Quantum Electron., 51:2 (2021), 133–136 ] |
5
|
| 34. |
P. S. Gavrina, A. A. Podoskin, E. V. Fomin, D. A. Veselov, V. V. Shamakhov, S. O. Slipchenko, N. A. Pikhtin, P. S. Kop'ev, “Light–current characteristics of high-power pulsed semiconductor lasers (1060 nm) operating at increased (up to 90 °C) temperatures”, Kvantovaya Elektronika, 51:2 (2021), 129–132 [Quantum Electron., 51:2 (2021), 129–132 ] |
6
|
| 35. |
Yu. K. Bobretsova, D. A. Veselov, A. A. Podoskin, N. V. Voronkova, S. O. Slipchenko, M. A. Ladugin, T. A. Bagaev, A. A. Marmalyuk, N. A. Pikhtin, “Experimental technique for studying optical absorption in waveguide layers of semiconductor laser heterostructures”, Kvantovaya Elektronika, 51:2 (2021), 124–128 [Quantum Electron., 51:2 (2021), 124–128 ] |
3
|
|
2020 |
| 36. |
V. V. Dyudelev, D. A. Mikhailov, A. V. Babichev, S. N. Losev, E. A. Kognovitskaya, A. V. Lyutetskiy, S. O. Slipchenko, N. A. Pikhtin, A. G. Gladyshev, D. V. Denisov, I. I. Novikov, L. Ya. Karachinsky, V. I. Kuchinskii, A. Yu. Egorov, G. S. Sokolovskii, “Spectral dynamics of quantum cascade lasers generating frequency combs in the long-wavelength infrared range”, Zhurnal Tekhnicheskoi Fiziki, 90:8 (2020), 1333–1336 ; Tech. Phys., 65:8 (2020), 1281–1284 |
2
|
| 37. |
A. V. Babichev, D. A. Pashnev, A. G. Gladyshev, A. S. Kurochkin, E. S. Kolodeznyi, L. Ya. Karachinsky, I. I. Novikov, D. V. Denisov, V. V. Dyudelev, G. S. Sokolovskii, D. A. Firsov, L. E. Vorob'ev, S. O. Slipchenko, A. V. Lyutetskiy, N. A. Pikhtin, A. Yu. Egorov, “Spectral characteristics of half-ring quantum-cascade lasers”, Optics and Spectroscopy, 128:8 (2020), 1165–1170 ; Optics and Spectroscopy, 128:8 (2020), 1187–1192 |
7
|
| 38. |
A. V. Babichev, D. A. Pashnev, D. V. Denisov, A. G. Gladyshev, Yu. K. Bobretsova, S. O. Slipchenko, L. Ya. Karachinsky, I. I. Novikov, D. A. Firsov, L. E. Vorob'ev, N. A. Pikhtin, A. Yu. Egorov, “Study of the spectra of arched-cavity quantum-cascade lasers”, Optics and Spectroscopy, 128:6 (2020), 696–700 ; Optics and Spectroscopy, 128:6 (2020), 702–706 |
1
|
| 39. |
P. S. Gavrina, O. S. Soboleva, A. A. Podoskin, A. E. Kazakova, V. A. Kapitonov, S. O. Slipchenko, N. A. Pikhtin, “Study of the spatial and current dynamics of optical loss in semiconductor laser heterostructures by optical probing”, Fizika i Tekhnika Poluprovodnikov, 54:8 (2020), 734–742 ; Semiconductors, 54:8 (2020), 882–889 |
2
|
| 40. |
A. A. Podoskin, D. N. Romanovich, I. S. Shashkin, P. S. Gavrina, Z. N. Sokolova, S. O. Slipchenko, N. A. Pikhtin, “Switching control model of closed-mode structures in large rectangular cavities based on AlGaAs/InGaAs/GaAs laser heterostructures”, Fizika i Tekhnika Poluprovodnikov, 54:5 (2020), 484–489 ; Semiconductors, 54:5 (2020), 581–586 |
2
|
| 41. |
O. S. Soboleva, V. S. Golovin, V. S. Yuferev, P. S. Gavrina, N. A. Pikhtin, S. O. Slipchenko, A. A. Podoskin, “Modeling the spatial switch-on dynamics of a laser thyristor ($\lambda$ = 905 nm) based on an AlGaAs/InGaAs/GaAs multi-junction heterostructure”, Fizika i Tekhnika Poluprovodnikov, 54:5 (2020), 478–483 ; Semiconductors, 54:5 (2020), 575–580 |
5
|
| 42. |
S. O. Slipchenko, A. A. Podoskin, O. S. Soboleva, V. S. Yuferev, V. S. Golovin, P. S. Gavrina, D. N. Romanovich, I. V. Miroshnikov, N. A. Pikhtin, “Carrier-transport processes in $n^{+}$-GaAs/$n^{0}$-GaAs/$n^{+}$-GaAs isotype heterostructures with a thin wide-gap AlGaAs barrier”, Fizika i Tekhnika Poluprovodnikov, 54:5 (2020), 452–457 ; Semiconductors, 54:5 (2020), 529–533 |
2
|
| 43. |
I. S. Shashkin, A. Yu. Leshko, D. N. Nikolaev, V. V. Shamakhov, D. A. Veselov, N. A. Rudova, K. V. Bakhvalov, V. V. Zolotarev, S. O. Slipchenko, N. A. Pikhtin, P. S. Kop'ev, “Single-mode lasers (1050 nm) of mesa-stripe design based on an AlGaAs/GaAs heterostructure with an ultra-narrow waveguide”, Fizika i Tekhnika Poluprovodnikov, 54:4 (2020), 414–419 ; Semiconductors, 54:4 (2020), 489–494 |
5
|
| 44. |
I. S. Shashkin, A. Yu. Leshko, D. N. Nikolaev, V. V. Shamakhov, N. A. Rudova, K. V. Bakhvalov, A. V. Lyutetskiy, V. A. Kapitonov, V. V. Zolotarev, S. O. Slipchenko, N. A. Pikhtin, P. S. Kop'ev, “Light characteristics of narrow-stripe high-power semiconductor lasers (1060 nm) based on asymmetric AlGaAs/GaAs heterostructures with a broad waveguide”, Fizika i Tekhnika Poluprovodnikov, 54:4 (2020), 408–413 |
1
|
| 45. |
V. V. Dyudelev, D. A. Mikhailov, V. Yu. Mylnikov, A. V. Babichev, S. N. Losev, E. A. Kognovitskaya, A. G. Gladyshev, L. Ya. Karachinsky, I. I. Novikov, D. V. Denisov, S. O. Slipchenko, A. V. Lyutetskiy, N. A. Pikhtin, V. I. Kuchinskii, A. Yu. Egorov, G. S. Sokolovskii, “A study of the spatial-emission characteristics of quantum-cascade lasers for the 8-$\mu$m spectral range”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:22 (2020), 51–54 ; Tech. Phys. Lett., 46:11 (2020), 1152–1155 |
1
|
| 46. |
A. V. Babichev, A. G. Gladyshev, V. V. Dyudelev, L. Ya. Karachinsky, I. I. Novikov, D. V. Denisov, S. O. Slipchenko, A. V. Lyutetskiy, N. A. Pikhtin, G. S. Sokolovskii, A. Yu. Egorov, “Heterostructures of quantum-cascade laser for the spectral range of 4.6 $\mu$m for obtaining a continuous-wave lasing mode”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:9 (2020), 35–38 ; Tech. Phys. Lett., 46:5 (2020), 442–445 |
10
|
| 47. |
V. N. Svetogorov, Yu. L. Ryaboshtan, M. A. Ladugin, A. A. Padalitsa, N. A. Volkov, A. A. Marmalyuk, S. O. Slipchenko, A. V. Lyutetskiy, D. A. Veselov, N. A. Pikhtin, “AlGaInAs/InP semiconductor lasers with an ultra-narrow waveguide and an increased electron barrier”, Kvantovaya Elektronika, 50:12 (2020), 1123–1125 [Quantum Electron., 50:12 (2020), 1123–1125 ] |
5
|
| 48. |
T. A. Bagaev, M. A. Ladugin, A. A. Padalitsa, A. A. Marmalyuk, Yu. V. Kurnyavko, A. V. Lobintsov, A. I. Danilov, S. M. Sapozhnikov, V. V. Krichevskii, V. P. Konyaev, V. A. Simakov, S. O. Slipchenko, A. A. Podoskin, N. A. Pikhtin, “Triple integrated laser–thyristor”, Kvantovaya Elektronika, 50:11 (2020), 1001–1003 [Quantum Electron., 50:11 (2020), 1001–1003 ] |
3
|
| 49. |
V. V. Dyudelev, D. A. Mikhailov, A. V. Babichev, G. M. Savchenko, S. N. Losev, E. A. Kognovitskaya, A. V. Lyutetskiy, S. O. Slipchenko, N. A. Pikhtin, A. G. Gladyshev, D. V. Denisov, I. I. Novikov, L. Ya. Karachinsky, V. I. Kuchinskii, A. Yu. Egorov, G. S. Sokolovskii, “Development and study of high-power quantum-cascade lasers emitting at 4.5 – 4.6 μm”, Kvantovaya Elektronika, 50:11 (2020), 989–994 [Quantum Electron., 50:11 (2020), 989–994 ] |
9
|
| 50. |
E. O. Batura, Yu. K. Bobretsova, M. V. Bogdanovich, D. A. Veselov, A. V. Grigor'ev, V. N. Dudikov, A. M. Kot, N. A. Pikhtin, A. G. Ryabtsev, G. I. Ryabtsev, S. O. Slipchenko, P. V. Shpak, “Lasing dynamics of diode-pumped Yb – Er laser with a passive Q switch exposed to high-power external light”, Kvantovaya Elektronika, 50:9 (2020), 822–825 [Quantum Electron., 50:9 (2020), 822–825 ] |
| 51. |
Yu. K. Bobretsova, D. A. Veselov, A. A. Klimov, V. A. Kryuchkov, I. S. Shashkin, S. O. Slipchenko, N. A. Pikhtin, “Leaky wave in high-power AlGaAs/InGaAs/GaAs semiconductor lasers”, Kvantovaya Elektronika, 50:8 (2020), 722–726 [Quantum Electron., 50:8 (2020), 722–726 ] |
1
|
| 52. |
V. V. Dyudelev, D. A. Mikhailov, A. V. Babichev, S. N. Losev, E. A. Kognovitskaya, A. V. Lyutetskiy, S. O. Slipchenko, N. A. Pikhtin, A. G. Gladyshev, D. V. Denisov, I. I. Novikov, L. Ya. Karachinsky, V. I. Kuchinskii, A. Yu. Egorov, G. S. Sokolovskii, “10-W 4.6-μm quantum cascade lasers”, Kvantovaya Elektronika, 50:8 (2020), 720–721 [Quantum Electron., 50:8 (2020), 720–721 ] |
9
|
| 53. |
V. S. Golovin, I. S. Shashkin, S. O. Slipchenko, N. A. Pikhtin, P. S. Kop'ev, “Longitudinal spatial hole burning in high-power semiconductor lasers: numerical analysis”, Kvantovaya Elektronika, 50:2 (2020), 147–152 [Quantum Electron., 50:2 (2020), 147–152 ] |
10
|
| 54. |
V. V. Dyudelev, D. A. Mikhailov, A. V. Babichev, A. D. Andreev, S. N. Losev, E. A. Kognovitskaya, Yu. K. Bobretsova, S. O. Slipchenko, N. A. Pikhtin, A. G. Gladyshev, D. V. Denisov, I. I. Novikov, L. Ya. Karachinsky, V. I. Kuchinskii, A. Yu. Egorov, G. S. Sokolovskii, “High-power (>1 W) room-temperature quantum-cascade lasers for the long-wavelength IR region”, Kvantovaya Elektronika, 50:2 (2020), 141–142 [Quantum Electron., 50:2 (2020), 141–142 ] |
24
|
|
2019 |
| 55. |
A. A. Podoskin, D. N. Romanovich, I. S. Shashkin, P. S. Gavrina, Z. N. Sokolova, S. O. Slipchenko, N. A. Pikhtin, “Сlosed mode features in rectangular resonators based on InGaAs/AlGaAs/GaAs laser heterostructures”, Fizika i Tekhnika Poluprovodnikov, 53:6 (2019), 839–843 ; Semiconductors, 53:6 (2019), 828–832 |
5
|
| 56. |
S. O. Slipchenko, A. A. Podoskin, O. S. Soboleva, V. S. Yuferev, V. S. Golovin, P. S. Gavrina, D. N. Romanovich, I. V. Miroshnikov, N. A. Pikhtin, “Specific features of carrier transport in $n^{+}$–$n^{0}$–$n^{+}$ structures with a GaAs/AlGaAs heterojunction at ultrahigh current densities”, Fizika i Tekhnika Poluprovodnikov, 53:6 (2019), 816–823 ; Semiconductors, 53:6 (2019), 806–813 |
5
|
| 57. |
V. V. Dyudelev, D. A. Mikhailov, A. V. Babichev, S. N. Losev, D. V. Chistyakov, E. A. Kognovitskaya, D. D. Avrov, S. O. Slipchenko, A. V. Lyutetskiy, N. A. Pikhtin, A. G. Gladyshev, L. Ya. Karachinsky, I. I. Novikov, V. I. Kuchinskii, A. Yu. Egorov, G. S. Sokolovskii, “Generation of frequency combs by quantum cascade lasers emitting in the 8-$\mu$m wavelength range”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:20 (2019), 18–21 ; Tech. Phys. Lett., 45:10 (2019), 1027–1030 |
2
|
| 58. |
A. V. Babichev, V. V. Dyudelev, A. G. Gladyshev, D. A. Mikhailov, A. S. Kurochkin, E. S. Kolodeznyi, V. E. Bugrov, V. N. Nevedomskiy, L. Ya. Karachinsky, I. I. Novikov, D. V. Denisov, A. S. Ionov, S. O. Slipchenko, A. V. Lyutetskiy, N. A. Pikhtin, G. S. Sokolovskii, A. Yu. Egorov, “High-power quantum-cascade lasers emitting in the 8-$\mu$m wavelength range”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:14 (2019), 48–51 ; Tech. Phys. Lett., 45:7 (2019), 735–738 |
16
|
| 59. |
A. V. Babichev, A. G. Gladyshev, A. S. Kurochkin, V. V. Dyudelev, E. S. Kolodeznyi, G. S. Sokolovskii, V. E. Bugrov, L. Ya. Karachinsky, I. I. Novikov, D. V. Denisov, A. S. Ionov, S. O. Slipchenko, A. V. Lyutetskiy, N. A. Pikhtin, A. Yu. Egorov, “Room temperature lasing of single-mode arched-cavity quantum-cascade lasers”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:8 (2019), 31–33 ; Tech. Phys. Lett., 45:4 (2019), 398–400 |
17
|
| 60. |
P. S. Gavrina, O. S. Soboleva, A. A. Podoskin, D. N. Romanovich, V. S. Golovin, S. O. Slipchenko, N. A. Pikhtin, T. A. Bagaev, M. A. Ladugin, A. A. Marmalyuk, V. A. Simakov, “Experimental studies of the on-state propagation dynamics of low-voltage laser-thyristors based on AlGaAs/InGaAs/GaAs heterostructures”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:8 (2019), 7–11 ; Tech. Phys. Lett., 45:4 (2019), 374–378 |
3
|
| 61. |
V. V. Shamakhov, D. N. Nikolaev, V. S. Golovin, D. A. Veselov, S. O. Slipchenko, N. A. Pikhtin, “Study of multimode semiconductor lasers with buried mesas”, Kvantovaya Elektronika, 49:12 (2019), 1172–1174 [Quantum Electron., 49:12 (2019), 1172–1174 ] |
1
|
| 62. |
V. V. Dyudelev, D. A. Mikhailov, A. D. Andreev, E. A. Kognovitskaya, A. V. Lyutetskiy, S. O. Slipchenko, N. A. Pikhtin, A. G. Gladyshev, D. V. Denisov, K. O. Voropaev, A. S. Ionov, A. V. Babichev, I. I. Novikov, L. Ya. Karachinsky, V. I. Kuchinskii, A. Yu. Egorov, G. S. Sokolovskii, “Tunable single-frequency source based on a DFB laser array for the spectral region of 1.55 μm”, Kvantovaya Elektronika, 49:12 (2019), 1158–1162 [Quantum Electron., 49:12 (2019), 1158–1162 ] |
2
|
| 63. |
T. A. Bagaev, M. A. Ladugin, A. A. Padalitsa, A. A. Marmalyuk, Yu. V. Kurnyavko, A. V. Lobintsov, A. I. Danilov, S. M. Sapozhnikov, V. V. Krichevskii, M. V. Zverkov, V. P. Konyaev, V. A. Simakov, S. O. Slipchenko, A. A. Podoskin, N. A. Pikhtin, “Double integrated laser-thyristor”, Kvantovaya Elektronika, 49:11 (2019), 1011–1013 [Quantum Electron., 49:11 (2019), 1011–1013 ] |
6
|
| 64. |
V. V. Dyudelev, D. A. Mikhailov, D. V. Chistyakov, E. A. Kognovitskaya, A. V. Lyutetskiy, S. O. Slipchenko, N. A. Pikhtin, A. G. Gladyshev, D. V. Denisov, K. O. Voropaev, A. S. Ionov, A. V. Babichev, I. I. Novikov, L. Ya. Karachinsky, V. I. Kuchinskii, A. Yu. Egorov, G. S. Sokolovskii, “High-coupling distributed feedback lasers for the 1.55 μm spectral region”, Kvantovaya Elektronika, 49:9 (2019), 801–803 [Quantum Electron., 49:9 (2019), 801–803 ] |
1
|
| 65. |
Yu. K. Bobretsova, D. A. Veselov, A. A. Klimov, L. S. Vavilova, V. V. Shamakhov, S. O. Slipchenko, N. A. Pikhtin, “Ultranarrow-waveguide AlGaAs/GaAs/InGaAs lasers”, Kvantovaya Elektronika, 49:7 (2019), 661–665 [Quantum Electron., 49:7 (2019), 661–665 ] |
5
|
| 66. |
Yu. K. Bobretsova, D. A. Veselov, N. V. Voronkova, S. O. Slipchenko, V. A. Strelets, M. V. Bogdanovich, P. V. Shpak, M. A. Ladugin, A. A. Marmalyuk, N. A. Pikhtin, “Pulsed laser module based on a high-power semiconductor laser for the spectral range 1500–1600 nm”, Kvantovaya Elektronika, 49:5 (2019), 488–492 [Quantum Electron., 49:5 (2019), 488–492 ] |
3
|
|
2018 |
| 67. |
V. V. Dyudelev, S. N. Losev, V. Yu. Mylnikov, A. V. Babichev, E. A. Kognovitskaya, S. O. Slipchenko, A. V. Lyutetskiy, N. A. Pikhtin, A. G. Gladyshev, L. Ya. Karachinsky, I. I. Novikov, A. Yu. Egorov, V. I. Kuchinskii, G. S. Sokolovskii, “High temperature laser generation of quantum-cascade lasers in the spectral region of 8 $\mu$m”, Fizika Tverdogo Tela, 60:11 (2018), 2251–2254 ; Phys. Solid State, 60:11 (2018), 2291–2294 |
7
|
| 68. |
V. V. Dyudelev, S. N. Losev, V. Yu. Mylnikov, A. V. Babichev, E. A. Kognovitskaya, S. O. Slipchenko, A. V. Lyutetskiy, N. A. Pikhtin, A. G. Gladyshev, L. Ya. Karachinsky, I. I. Novikov, A. Yu. Egorov, V. I. Kuchinskii, G. S. Sokolovskii, “Turn-on dynamics of quantum cascade lasers with a wavelength of 8100 nm at room temperature”, Zhurnal Tekhnicheskoi Fiziki, 88:11 (2018), 1708–1710 ; Tech. Phys., 63:11 (2018), 1656–1658 |
12
|
| 69. |
V. V. Dyudelev, S. N. Losev, V. Yu. Mylnikov, A. V. Babichev, E. A. Kognovitskaya, S. O. Slipchenko, A. V. Lyutetskiy, N. A. Pikhtin, A. G. Gladyshev, L. Ya. Karachinsky, I. I. Novikov, A. Yu. Egorov, V. I. Kuchinskii, G. S. Sokolovskii, “Dual-frequency generation in quantum cascade lasers of the 8-$\mu$m spectral range”, Optics and Spectroscopy, 125:3 (2018), 387–390 ; Optics and Spectroscopy, 125:3 (2018), 402–404 |
24
|
| 70. |
I. S. Shashkin, O. S. Soboleva, P. S. Gavrina, V. V. Zolotarev, S. O. Slipchenko, N. A. Pikhtin, “All-electric laser beam control based on a quantum-confined heterostructure with an integrated distributed Bragg grating”, Fizika i Tekhnika Poluprovodnikov, 52:12 (2018), 1491–1498 ; Semiconductors, 52:12 (2018), 1595–1602 |
5
|
| 71. |
A. A. Marmalyuk, Yu. L. Ryaboshtan, P. V. Gorlachuk, M. A. Ladugin, A. A. Padalitsa, S. O. Slipchenko, A. V. Lyutetskiy, D. A. Veselov, N. A. Pikhtin, “Effect of the waveguide layer thickness on output characteristics of semiconductor lasers with emission wavelength from 1500 to 1600 nm”, Kvantovaya Elektronika, 48:3 (2018), 197–200 [Quantum Electron., 48:3 (2018), 197–200 ] |
13
|
|
2017 |
| 72. |
A. A. Podoskin, I. S. Shashkin, S. O. Slipchenko, N. A. Pikhtin, I. S. Tarasov, “All-optical modulator cells based on AlGaAs/GaAs/InGaAs 905-nm laser heterostructures”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:2 (2017), 31–37 ; Tech. Phys. Lett., 43:1 (2017), 101–103 |
3
|
| 73. |
A. A. Marmalyuk, Yu. L. Ryaboshtan, P. V. Gorlachuk, M. A. Ladugin, A. A. Padalitsa, S. O. Slipchenko, A. V. Lyutetskiy, D. A. Veselov, N. A. Pikhtin, “Semiconductor AlGaInAs/InP lasers with ultra-narrow waveguides”, Kvantovaya Elektronika, 47:3 (2017), 272–274 [Quantum Electron., 47:3 (2017), 272–274 ] |
25
|
|
2016 |
| 74. |
D. A. Veselov, I. S. Shashkin, Yu. K. Bobretsova, K. V. Bakhvalov, A. V. Lyutetskiy, V. A. Kapitonov, N. A. Pikhtin, S. O. Slipchenko, Z. N. Sokolova, I. S. Tarasov, “Study of the pulse characteristics of semiconductor lasers with a broadened waveguide at low temperatures (110–120 K)”, Fizika i Tekhnika Poluprovodnikov, 50:10 (2016), 1414–1419 ; Semiconductors, 50:10 (2016), 1396–1402 |
8
|
| 75. |
D. A. Veselov, I. S. Shashkin, K. V. Bakhvalov, A. V. Lyutetskiy, N. A. Pikhtin, M. G. Rastegaeva, S. O. Slipchenko, E. A. Bechvay, V. A. Strelets, V. V. Shamakhov, I. S. Tarasov, “On the problem of internal optical loss and current leakage in laser heterostructures based on AlGaInAs/InP solid solutions”, Fizika i Tekhnika Poluprovodnikov, 50:9 (2016), 1247–1252 ; Semiconductors, 50:9 (2016), 1225–1230 |
8
|
|
2015 |
| 76. |
V. V. Zolotarev, A. Yu. Leshko, N. A. Pikhtin, S. O. Slipchenko, Z. N. Sokolova, Ya. V. Lubyanskiy, N. V. Voronkova, I. S. Tarasov, “Integrated high-order surface diffraction gratings for diode lasers”, Kvantovaya Elektronika, 45:12 (2015), 1091–1097 [Quantum Electron., 45:12 (2015), 1091–1097 ] |
18
|
| 77. |
D. A. Veselov, K. R. Ayusheva, I. S. Shashkin, K. V. Bakhvalov, V. V. Vasil'eva, L. S. Vavilova, A. V. Lyutetskiy, N. A. Pikhtin, S. O. Slipchenko, Z. N. Sokolova, I. S. Tarasov, “Optimisation of cavity parameters for lasers based on AlGaInAsP/InP solid solutions (λ=1470 nm)”, Kvantovaya Elektronika, 45:10 (2015), 879–883 [Quantum Electron., 45:10 (2015), 879–883 ] |
2
|
| 78. |
D. A. Veselov, N. A. Pikhtin, A. V. Lyutetskiy, D. N. Nikolaev, S. O. Slipchenko, Z. N. Sokolova, V. V. Shamakhov, I. S. Shashkin, N. V. Voronkova, I. S. Tarasov, “Study of the absorption coefficient in layers of a semiconductor laser heterostructure”, Kvantovaya Elektronika, 45:7 (2015), 604–606 [Quantum Electron., 45:7 (2015), 604–606 ] |
15
|
| 79. |
D. A. Veselov, N. A. Pikhtin, A. V. Lyutetskiy, D. N. Nikolaev, S. O. Slipchenko, Z. N. Sokolova, V. V. Shamakhov, I. S. Shashkin, V. A. Kapitonov, I. S. Tarasov, “Effect of laser cavity parameters on saturation of light – current characteristics of high-power pulsed lasers”, Kvantovaya Elektronika, 45:7 (2015), 597–600 [Quantum Electron., 45:7 (2015), 597–600 ] |
20
|
|
2014 |
| 80. |
D. A. Veselov, V. A. Kapitonov, N. A. Pikhtin, A. V. Lyutetskiy, D. N. Nikolaev, S. O. Slipchenko, Z. N. Sokolova, V. V. Shamakhov, I. S. Shashkin, I. S. Tarasov, “Saturation of light – current characteristics of high-power lasers (λ = 1.0 – 1.1 mm) in pulsed regime”, Kvantovaya Elektronika, 44:11 (2014), 993–996 [Quantum Electron., 44:11 (2014), 993–996 ] |
40
|
| 81. |
V. V. Zolotarev, A. Yu. Leshko, N. A. Pikhtin, A. V. Lyutetskiy, S. O. Slipchenko, K. V. Bakhvalov, Ya. V. Lubyanskiy, M. G. Rastegaeva, I. S. Tarasov, “Spectral characteristics of multimode semiconductor lasers with a high-order surface diffraction grating”, Kvantovaya Elektronika, 44:10 (2014), 907–911 [Quantum Electron., 44:10 (2014), 907–911 ] |
7
|
|
|
|
2024 |
| 82. |
V. V. Dudelev, E. D. Cherotchenko, I. I. Vrubel, D. A. Mikhailov, D. V. Chistyakov, V. Yu. Mylnikov, S. N. Losev, E. A. Kognovitskaya, A. V. Babichev, A. V. Lutetskiy, S. O. Slipchenko, N. A. Pikhtin, A. G. Gladyshev, K. A. Podgaetskiy, A. Yu. Andreev, I. V. Yarotskaya, M. A. Ladugin, A. A. Marmalyuk, I. I. Novikov, V. I. Kuchinskii, L. Ya. Karachinsky, A. Yu. Egorov, G. S. Sokolovskii, “Quantum cascade lasers for the 8-$\mu$m spectral range: technology, design, and analysis”, UFN, 194:1 (2024), 98–105 ; Phys. Usp., 67:1 (2024), 92–98 |
3
|
|
| Organisations |
|
| |
|
|
Contact us: