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This article is cited in 5 scientific papers (total in 5 papers)
Lasers
AlGaInAs/InP semiconductor lasers with an ultra-narrow waveguide and an increased electron barrier
V. N. Svetogorova, Yu. L. Ryaboshtana, M. A. Ladugina, A. A. Padalitsaa, N. A. Volkova, A. A. Marmalyukab, S. O. Slipchenkoc, A. V. Lyutetskiyc, D. A. Veselovc, N. A. Pikhtinc a "Sigm Plyus" Ltd., Moscow
b National Engineering Physics Institute "MEPhI", Moscow
c Ioffe Institute, St. Petersburg
Abstract:
Semiconductor lasers based on AlGaInAs/InP heterostructures with an ultra-narrow waveguide and an increased electron barrier layer are developed. It is shown that the use of this waveguide in conjunction with profiled doping ensures a balance between internal optical losses and heat resistance. Additional use of strained wide-bandgap layers as blocking barriers limiting electron leakage from the active region makes it possible to increase the output power at the same pump current. The developed lasers with a stripe contact 100 μm wide demonstrate at room temperature an output optical power of 4.0–4.4 W (pump current 14 A) in a continuous-wave regime and 15–17 W (100 A) in a pulsed regime (100 ns, 1 kHz) at wavelengths of 1450–1500 nm.
Keywords:
semiconductor laser, heterostructure, AlGaInAs/InP, narrow waveguide, electron barrier.
Received: 23.09.2020
Citation:
V. N. Svetogorov, Yu. L. Ryaboshtan, M. A. Ladugin, A. A. Padalitsa, N. A. Volkov, A. A. Marmalyuk, S. O. Slipchenko, A. V. Lyutetskiy, D. A. Veselov, N. A. Pikhtin, “AlGaInAs/InP semiconductor lasers with an ultra-narrow waveguide and an increased electron barrier”, Kvantovaya Elektronika, 50:12 (2020), 1123–1125 [Quantum Electron., 50:12 (2020), 1123–1125]
Linking options:
https://www.mathnet.ru/eng/qe17366 https://www.mathnet.ru/eng/qe/v50/i12/p1123
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