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This article is cited in 3 scientific papers (total in 3 papers)
Lasers
Experimental technique for studying optical absorption in waveguide layers of semiconductor laser heterostructures
Yu. K. Bobretsovaa, D. A. Veselova, A. A. Podoskina, N. V. Voronkovaa, S. O. Slipchenkoa, M. A. Laduginb, T. A. Bagaevb, A. A. Marmalyukb, N. A. Pikhtina a Ioffe Institute, St. Petersburg
b Polyus Research and Development Institute named after M. F. Stel'makh, Moscow
Abstract:
We report a technique for studying the absorption of optical radiation in layers of a semiconductor heterostructure by the method of probe radiation coupling. The studies are carried out using specially made isotype samples based on AlGaAs/GaAs, simulating an n-type doped laser waveguide with a concentration of 1017 – 1018 cm-3. The main features of the experimental setup and calculation methods are described. A high (up to 95%) efficiency of light coupling into the waveguide and an error in measuring the absorption coefficient at a level of 0.1 cm-1 are achieved. The possibilities of studying the polarisation and temperature dependences of radiation absorption by free carriers are experimentally demonstrated. It is shown that with an increase in temperature in the range 25 – 85°C, the absorption in the samples increases by 15%.
Keywords:
semiconductor laser, semiconductor heterostructure, optical absorption by free carriers.
Received: 31.08.2020
Citation:
Yu. K. Bobretsova, D. A. Veselov, A. A. Podoskin, N. V. Voronkova, S. O. Slipchenko, M. A. Ladugin, T. A. Bagaev, A. A. Marmalyuk, N. A. Pikhtin, “Experimental technique for studying optical absorption in waveguide layers of semiconductor laser heterostructures”, Kvantovaya Elektronika, 51:2 (2021), 124–128 [Quantum Electron., 51:2 (2021), 124–128]
Linking options:
https://www.mathnet.ru/eng/qe17391 https://www.mathnet.ru/eng/qe/v51/i2/p124
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