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This article is cited in 13 scientific papers (total in 13 papers)
Lasers and amplifiers
Effect of the waveguide layer thickness on output characteristics of semiconductor lasers with emission wavelength from 1500 to 1600 nm
A. A. Marmalyukab, Yu. L. Ryaboshtana, P. V. Gorlachuka, M. A. Ladugina, A. A. Padalitsaa, S. O. Slipchenkoc, A. V. Lyutetskiyc, D. A. Veselovc, N. A. Pikhtinc a "Sigm Plyus" Ltd., Moscow
b National Engineering Physics Institute "MEPhI", Moscow
c Ioffe Physico-Technical Institute, Russian Academy of Sciences, St. Petersburg
Abstract:
The effect of the waveguide layer thickness on output characteristics of AlGaInAs/InP quantum-well semiconductor lasers is analysed. The samples of semiconductor lasers with narrow and wide waveguides are experimentally fabricated. Their comparison is carried out and the advantages of particular constructions depending on the current pump are demonstrated.
Keywords:
semiconductor laser, heterostructure, AlGaInAs/InP, output power.
Received: 20.10.2017 Revised: 25.12.2017
Citation:
A. A. Marmalyuk, Yu. L. Ryaboshtan, P. V. Gorlachuk, M. A. Ladugin, A. A. Padalitsa, S. O. Slipchenko, A. V. Lyutetskiy, D. A. Veselov, N. A. Pikhtin, “Effect of the waveguide layer thickness on output characteristics of semiconductor lasers with emission wavelength from 1500 to 1600 nm”, Kvantovaya Elektronika, 48:3 (2018), 197–200 [Quantum Electron., 48:3 (2018), 197–200]
Linking options:
https://www.mathnet.ru/eng/qe16780 https://www.mathnet.ru/eng/qe/v48/i3/p197
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Abstract page: | 517 | Full-text PDF : | 160 | References: | 45 | First page: | 30 |
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