A. A. Marmalyuk, Yu. L. Ryaboshtan, P. V. Gorlachuk, M. A. Ladugin, A. A. Padalitsa, S. O. Slipchenko, A. V. Lyutetskiy, D. A. Veselov, N. A. Pikhtin, “Effect of the waveguide layer thickness on output characteristics of semiconductor lasers with emission wavelength from 1500 to 1600 nm”, Kvantovaya Elektronika, 48:3 (2018), 197–200 [Quantum Electron., 48:3 (2018), 197

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Kvantovaya Elektronika, 2018, Volume 48, Number 3, Pages 197–200 (Mi qe16780)

This article is cited in 13 scientific papers (total in 13 papers)

Lasers and amplifiers

Effect of the waveguide layer thickness on output characteristics of semiconductor lasers with emission wavelength from 1500 to 1600 nm

A. A. Marmalyuk^ab, Yu. L. Ryaboshtan^a, P. V. Gorlachuk^a, M. A. Ladugin^a, A. A. Padalitsa^a, S. O. Slipchenko^c, A. V. Lyutetskiy^c, D. A. Veselov^c, N. A. Pikhtin^c

^a "Sigm Plyus" Ltd., Moscow
^b National Engineering Physics Institute "MEPhI", Moscow
^c Ioffe Physico-Technical Institute, Russian Academy of Sciences, St. Petersburg

Full-text PDF (584 kB) Citations (13)

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Abstract: The effect of the waveguide layer thickness on output characteristics of AlGaInAs/InP quantum-well semiconductor lasers is analysed. The samples of semiconductor lasers with narrow and wide waveguides are experimentally fabricated. Their comparison is carried out and the advantages of particular constructions depending on the current pump are demonstrated.

Keywords: semiconductor laser, heterostructure, AlGaInAs/InP, output power.

Funding agency	Grant number
Ministry of Education and Science of the Russian Federation	02.а03.21.0005

Received: 20.10.2017
Revised: 25.12.2017

English version:
Quantum Electronics, 2018, Volume 48, Issue 3, Pages 197–200
DOI: https://doi.org/10.1070/QEL16545

Bibliographic databases:

Document Type: Article

Language: Russian

Citation: A. A. Marmalyuk, Yu. L. Ryaboshtan, P. V. Gorlachuk, M. A. Ladugin, A. A. Padalitsa, S. O. Slipchenko, A. V. Lyutetskiy, D. A. Veselov, N. A. Pikhtin, “Effect of the waveguide layer thickness on output characteristics of semiconductor lasers with emission wavelength from 1500 to 1600 nm”, Kvantovaya Elektronika, 48:3 (2018), 197–200 [Quantum Electron., 48:3 (2018), 197–200]

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https://www.mathnet.ru/eng/qe16780

https://www.mathnet.ru/eng/qe/v48/i3/p197

This publication is cited in the following 13 articles:

Citing articles in Google Scholar: Russian citations, English citations
Related articles in Google Scholar: Russian articles, English articles

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Abstract page:	517
Full-text PDF :	160
References:	45
First page:	30

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